Infineon BAT17... handbook
Contents
1. C AT 7 10 150 C 107 10 0 0 0 1 0 2 0 3 0 4 0 5 V 0 6 V BAT 17 Feb 19 20012. Characteristics Diode capacitance Vp O0V f 1 MHz Forward resistance IF 5 mA f 10 kHz 0 75 pF 15 IQ Feb 19 2001 Infineon technologies Diode capacitance CT f Vp f 1MHz EHD07108 1 0 0 5 0 0 0 1 0 2 0 3 0 V 4 0 Vp Reverse current IR f Vp Ta Parameter 102 EHD07107 R A 10 Ta 150 C 10 85 C 107 102 25 C 10 0 0 1 0 2 0 3 0 V 40 BAT 17 Forward resistance f IF f 10kHz 103 EHD07109 h Q 10 10 10 107 10 101 mA 10 I Forward current IF f 7 Ts Package mounted on epoxy 200 EHD07110 0 50 100 C 150 Ta Tg 3 Feb 19 2001 Infineon technologies Forward current f VF Ta Parameter 10 EHD07106 I F mA 10 Ta 40 a 85
3. OO BATINOG OO BATI 00 Infineon technologies Silicon Schottky Diode e For mixer applications in VHF UHF range e For high speed switching application BAT 17 BAT 17 04 BAT 17 05 d 3 1 805161 3 EHA07002 1 2 1 2 be p BAT 17 06 EHA07005 EHA07004 3 1 K N 2 EHA07006 Type Marking Pin Configuration Package BAT 17 53s A 2 n C 3 C SOT 23 BAT 17 04 54s 1 A1 2 C2 3 61 42 SOT 23 BAT 17 05 55s 1 A1 2 A2 3 C1 2 SOT 23 BAT 17 06 56s 1 C1 2 C2 3 A1 2 SOT 23 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 4 V Forward current F 130 mA Total power dissipation Prot 150 mW Tg lt 60 C Junction temperature T 150 C Operating temperature range Top 55 150 Storage temperature T sta 55 150 Thermal Resistance Parameter Symbol Value Unit Junction ambient Rhya lt 750 Junction soldering point Rhus lt 590 1Package mounted on epoxy pcb 40mm x 40mm x 1 5mm 1cm2 1 Feb 19 2001 ev Infineon technologies BAT 17 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteristics Breakdown voltage VBR 4 V BR 10 HA Reverse current IR HA VR 3 0 25 VR 4V 10 VR 3 V Ta 60 C 1 25 Forward voltage VF mV IF 0 1 mA 200 275 350 IF 1 mA 250 340 450 IF 10 mA 350 425 600 AC
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Infineon BAT17... handbook