ST BTA10 GP handbook
Contents
1. 40 Fig 4 Relative variation of thermal impedance versus pulse duration Zth Rth 1E 1 1E 2 5E 2 Fig 6 Non repetitive surge peak on state current versus number of cycles BTA10 GP Fig 7 Non repetitive surge peak on state current for a Fig 8 On state characteristics maximum values sinusoidal pulse with width t lt 10ms and corresponding values of 12t IreM A t A s Tj initial 25 C 100 10 PACKAGE MECHANICAL DATA TO220AB Plastic DIMENSIONS Milimeters Inches Min Max Min Max A 10 20 10 50 0 401 0 413 B 1423 1587 0 560 0 625 D 585 685 0230 0 270 LE 450 0178 G 254 3 00 0 100 0 119 H 448 482 0 176 0 190 1 355 400 0 140 0 158 M 210 270 0 082 0 107 N 458 558 018 0 22 o oso 120 0 031 0 048 P 064 oge 0 025 0 088 Cooling method C Recommended torque value 0 8 m N Marking type number Maximum torque value 1 m N Weight 2 3 g Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or oth2. O 0 BTA1OGPTI OO y SES THOMSON rn TRIACS FEATURES a LOW lH 13mA max a HIGH SURGE CURRENT IrsM 120A lar SPECIFIED IN FOUR QUADRANTS a INSULATING VOLTAGE 2500V nys UL RECOGNIZED E81734 DESCRIPTION The BTA10 GP s use high performance glass pas sivated chips The insulated TO220AB package the high surge TO220AB current and low holding current make this family Plastic well adapted to LIGHT DIMMER applications ABSOLUTE RATINGS limiting values IT RMS RMS on state current Tc 90 C 360 conduction angle ITSM Non repetitive surge peak on state current Tj initial 25 C I2t value Critical rate of rise of on state current Repetitive Gate supply IG 500mA dig dt 1A us F 50 Hz E Storage and operating junction temperature range VDRM Foie peak off state voltage VRRM 125 C March 1995 1 4 BTA10 GP THERMAL RESISTANCES Rth j a Junction to ambient ia O S Rth j c DC Junction to case for DC c AC Rth j c Junction to case for 360 conduction angle 3 F 50 Hz GATE CHARACTERISTICS maximum values PG AV 1W PaGM 10W tp 20 us IGM 4A tp 20 us VGM 16V tp 20 us ELECTRICAL CHARACTERISTICS Symbol Test Conditions Vp 12V DC R 33Q oun cl Vp 12V DC R 33Q Tj 25 C I IEIII IV IGT VGT VGD Vp VpRM RL 3 3kQ Tj 110 C 1 11 11 1V tgt IL IH VTM g Vp VpRM Iq 500mA Tj 25 C LII II IV dic dt 3A us e IG 1 2 IG
3. T I HI IV d IT 100mA gate open Tj 25 C ITM 14A tp 380us Tj 25 C IDRM VDRM Rated IRRM VnRM Rated M M M M M M M dV dt Linear slope up to VD 67 VDRM gate open dV dt c di dt c 2 2A ms Tj 110 C AX AX AX MIN TYP TYP AX AX AX AX MIN TYP MIN TYP For either polarity of electrode A2 voltage with reference to electrode A1 2 4 IT nus THOME PN Fig 1 Maximum RMS power dissipation versus RMS on state current F 50Hz curves are cut off by dl dt c limitation P W 14 180 12 a X 1 O 180 10 L ly C 120 8 90 6 Q 60 4 30 2 n T RMs A 0 14 2 3 4 5 6 7 8 9 10 Fig 3 RMS on state current versus case temperature Ir RMs 12 10 20 30 40 50 60 70 80 90 100110120130 Fig 5 Relative variation of gate trigger current and holding current versus junction temperature Igti Til MhiT lgt Tj 25 C Ih Tj 25 C 2 5 0 40 30 20 10 0 10 20 30 40 50 80 70 80 90 100110 ATI SESHOMSDN BTA10 GP Fig 2 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact P W Tcase C 14 T 85 Rth 0 C W 12 2 5 C W CAN 10 95 8 105 6 z 115 2 Tamb C 0 125 0 20 40 60 80 100 120 1
4. er rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS T HOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1995 SGS THOMSON Microelectronics Printed in Italy All rights reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Nether lands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A iis g SGS THOMSON Fa TIERS ECT IES
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ST BTA10 GP handbook