SIEMENS BAT 114-099R handbook
Contents
1. O0 O BAT114 099RQ O 0 SIEMENS Silicon Crossover Ring Quad Schottky Diode Features e High barrier diode for double balanced mixers phase detectors and modulators BAT 114 099R lt d ESD ElectroStatic Discharge sensitive device observe handling precautions Type Marking Ordering Code Pin Configuration Package taped BAT 114 099R 14s Q62702 A1006 4 3 SOT 143 1 2 EHAO7012 1 Dimensions see chapter Package Outlines Maximum Ratings per diode Parameter Symbol Limit Values Unit Forward current iF 90 mA Operation temperature To 55 to 150 C Storage temperature Tog 55 to 150 C Power dissipation Ts lt 70 C Prot 100 mW Semiconductor Group 1 02 96 SIEMENS BAT 114 099R Thermal Resistance per diode Parameter Symbol Limit Values Unit Junction to soldering point lt 780 K W Junction to ambient Rina lt 1020 K W 1 Mounted on alumina 15 mm x 16 7 mm to 0 7 mm Electrical Characteristics per diode T 25 C Parameter Symbol Limit Values Unit min typ max Forward voltage V V I 1 mA 0 58 10 7 I 10 mA 0 68 0 78 Forward voltage matching AV mV lp 10 mA 20 Diode capacitance Cy pF Va 0 V f 1 MHz 0 25 Forward resistance R Q lp 10 mA 50 mA 5 5 1 AV is difference between low2. est and highest Vs in component Semiconductor Group 2 SIEMENS BAT 114 099R Forward Current f V 102 BAT 114 099R EHDO7178 mA Iy 10 T 40 C 25 C 85 C 100 125 C 107 1072 Semiconductor Group
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