Infineon BAT 165 handbook
Contents
1. 10 Oct 11 19992. current VR 30V Ta 65 C Forward voltage V l 10 mA le 100 mA lp 250 mA lp 750 mA AC characteristics Diode capacitance Cr 8 4 12 pF Vg 10V f 1 MHz Forward current F f Vp Reverse current p f Vp Ta parameter Ta Parameter 10 10 A A 10 107 E 65 C TA 40 C 10 45 C 20 z LL 2 L o X 140 5 2 E T oe 45 T T 2 oe 10 8L UC 10 9 20 C 10 107 P 10 10 0 00 0 10 0 20 0 30 0 40 0 50 0 60 V 0 80 0 4 8 12 16 20 24 V 30 WF VR 2 Oct 11 1999 Infineon technologies Forward current f Ta Ts Package mounted on epoxy 800 Ts mA 600 IF 500 400 300 200 80 100 120 C 150 Ta TS Permissible Pulse Load Rinus f t 10 K W 10 wn ap 101 0 5 2 02 0 4 0 05 0 02 0 40 0 01 0 005 D 0 10 109 10 10 10 10 s tp Diode capacitance Cr f Vp f 1MHz BAT 165 Permissible Pulse Load lemax IFDC ft 12 V 15 10 IFmax IFDC 10
3. OO BAT 163 0 O es Infineon BAT 165 technologies Silicon Schottky Diode 2 e Medium current Schottky rectifier diode 1 e For low loss fast recovery meter protection bias isolation and clamping applications e Miniature plastic package for surface mounting SMD VPS05176 ESD Electrostatic discharge sensitive device observe handling precaution Type Marking Pin Configuration Package BAT 165 White C C 27A SOD 323 Maximum Ratings Parameter Value Unit Diode reverse voltage 40 V Forward current 750 mA Average forward current 50 60Hz sinus 500 Surge forward current t 10ms 2 5 A Total power dissipation Ts 66 C 600 mW Junction temperature 150 C Storage temperature 65 150 Maximum Ratings Junction ambient 1 Rina lt 275 K W Junction soldering point Rhus lt 140 1 Package mounted on epoxy pcb 40mm x 40mm x 1 5mm 0 5cm2 Cu 1 Oct 11 1999 J BAT 165 technologies Electrical Characteristics at T4 25 C unless otherwise specified Parameter Symbol Values Unit min typ max Characteristics Reverse current uA VR 30 V Reverse
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Infineon BAT 165 handbook