Home

ST BTA08 B/C BTB08 B/C handbook

1. THERMAL RESISTANCES Symbol Parameter Value Unit Rth j a Junction to ambient 60 C W Rth j c DC Junction to case for DC BTA 44 C W BTB 3 2 Rth j c AC Junction to case for 360 conduction angle BTA 3 3 C W F 50 Hz BTB 2 4 GATE CHARACTERISTICS maximum values PG AV 1W 10W tp 20 us lam 20 us 16V tp 20 us ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit B IGT Vp 12V DC RL 33Q Tj 25 C 1 11 11 MAX 50 25 mA 100 50 VGT Vp 12V DC 330 Tj 25 C I IV 1 5 v VGD Vp VpRM RL 3 3kQ Tj 110 C MIN 0 2 v tgt VD VDRM IG 500mA Tj 25 C I II IV TYP 2 us dig dt 3A us IL Ig 1 2 IGT Tj 25 C I IV 40 20 mA 70 35 IT 500mA gate open Tj 25 C MAX 50 25 mA Vim IMS 11 tp 380us 25 1 75 Rated Tj 25 C MAX 0 01 mA RN JRHM tee Tj 110 C MAX 0 5 dV dt Linear slope up to Vp 67 VDRM Tj 110 C MIN 250 100 Vis gate open dV di c di dt c 3 5A ms Tj 110 C MIN 10 5 Vius For either polarity of electrode A2 voltage with reference to electrode A1 2 5 BTAO8 B C BTB08 B C ORDERING INFORMATION Package 5 VpRM VRRM Sensitivity Specification A B 8 400 X X Insulated
2. Zth Rth 1 i i Zth j c 01 Zth j a tp s 0 01 zn 1 3 1E2 1E4 1E40 1E 1 1 2 5E 2 Fig 7 Non Repetitive surge peak on state current versus number of cycles Ire A Number of cycles 1 1 10 100 1000 Fig 9 On state characteristics maximum values LIMA 100 10 Hi Ti 3 H Vto 10 4 1 Rt 0 0650 H Vm V 1 2 8 4 5 8 7 4 5 565 HOMsoN Fig 4 Relative variation of gate trigger current and holding current versus junction temperature 1gilTil lgiTj 25 C In Tj425 C 2 5 2 lgt 15 E 9 EN j h Saun lr 0 5 T Tj 0 40 30 20 10 0 10 20 30 40 50 60 70 80 90 100110 Fig 8 Non repetitive surge peak on state current for a sinusoidal pulse with width t lt 10ms and corresponding value of I2t IgM A rt 28 500 Tj initial 26 C T8M 100 rt t ms 10 LL 1 2 5 10 BTAO8 B C BTB08 B C PACKAGE MECHANICAL D
3. 600 x x 700 X X 800 X X BTB 400 X X Uninsulated 600 x x 700 X X 800 X X Fig 1 Maximum RMS power dissipation versus RMS on state current F 50Hz Curves are cut off by dl dt c limitation Fig 2 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamb and Tcase for different thermal resistances heatsink contact BTA P W W Tease C 12 T 12 Rth ooc w 90 2 5 C W 10 10 5 C W 1195 10 C W 8 8 100 6 6 105 110 4 4 H115 2 2 120 Tamb C 0 0 1 1125 0 20 40 60 80 100 120 140 Fig 3 Correlation between maximum RMS power dissipation and maximum allowable temperatures Tamp and Tcase for different thermal resistances heatsink contact BTB Fig 4 RMS on state current versus case temperature Tease 6 1 12 95 10 Rth 0 C W 10 2 5 C W 5 C W 4100 8 4105 6 1110 4 1115 2 4120 Tamb Tcase C 0 l 125 0 m 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 90 100110120130 3 5 BTAO8 B C BTB08 B C Fig 5 Relative variation of thermal impedance versus pulse duration
4. 0 0 BTA B0 0 0 SGS THOMSON A MICROELECTRONICS 8 B C BTB08 B C FEATURES a HIGH SURGE CURRENT CAPABILITY 1 COMMUTATION dV dt c gt 5 V us 2 BTA Family INSULATING VOLTAGE 2500V RMs UL RECOGNIZED E81734 DESCRIPTION 1 The 8 B C triac family high perform A2 ance glass passivated PNPN devices These parts are suitables for general purpose ap plications where high surge current capability is re TO220AB quired Application such as phase control and Plastic static switching on inductive or resistive load ABSOLUTE RATINGS limiting values Symbol Parameter Value Unit IT RMS RMS on state current BTA Tc 90 8 A 360 conduction angle BTB 95 ITSM Non repetitive surge peak on state current tp 8 3 ms 84 A Tj initial 25 C tp 10 ms 80 121 121 value 1 10 32 25 di dt Critical rate of rise of on state current Repetitive 10 Alus Gate supply IG 500mA dig dt 1A us 50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range 40 to 150 Tj 40 to 125 C Maximum lead temperature for soldering during 10 s at 4 5 260 C from case Symbol Parameter BTA BTBO8 B C Unit 400 600 700 800 VDRM Repetitive peak off state voltage 400 600 700 800 V VRRM Tj 125 C 1 5 March 1995 BTAO8 B C BTB08 B C
5. ATA TO220AB Plastic REF DIMENSIONS Millimeters Inches A M H Min Max Min Max EOM A 1020 10 50 0 401 0 413 H B 1423 15 87 0 560 0 625 Gu 3 FF c 12 70 14 70 0 500 0 579 i D 5 85 6 85 0 230 0 270 i z F 4 50 0 178 G 2 54 3 00 0 100 0 119 H 448 482 0 176 0 190 F 1 3 55 400 0 140 0 158 L J 115 1 39 0 045 0 055 d L 035 065 0 013 0 026 M 2 10 2 70 0082 0 107 Le N 458 558 0 18 0 22 0 80 120 0 031 0 048 P 0 64 0 96 0 025 0 038 Cooling method C Marking type number Weight 2 3g Recommended torque value 0 8 m N Maximum torque value 1 m N Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of SGS T HOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS THOMSON Microelectronics 1995 SGS THOMSON Microelectronics
6. Printed in Italy All rights reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Nether lands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A 5 5 SES THOMSON

ST BTA08 B/C BTB08 B/C handbook

Contents

Download Pdf Manuals

Related Search

Related Contents