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PHILIPS BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor handbook

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3. 0 870 Note 1 These parameters have not been extracted the default values are shown Ccb Il L1 Lg L2 E Cbe Cce LE MBC964 L3 m QLg 50 QLe 50 QLag f QLg eV f f fc scaling frequency 1 GHz Fig 20 Package equivalent circuit SOT343 SOT343R List of components see Fig 20 Che 70 f Coe 115 f s F F F nH nH nH nH August 1995 12 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR PACKAGE OUTLINES MSB374 Dimensions in mm Fig 21 SOT343 SAUL MSB367 Dimensions in mm Fig 22 SOT343R August 1995 13 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the li
4. N r T N L F opt ru X 0 2 0 2 0 5 1 E N 180 4 1 fi HHHH 0 0 a MLB992 1 0 90 f 2 GHz Vce 8 V lc 5 mA Zo 50 Q Fig 15 Common emitter noise figure circles typical values August 1995 9 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR MLB993 1 0 Vcg 8 V Ic 15 mA Zo 50 Q Fig 16 Common emitter input reflection coefficient s41 typical values 909 1359 459 40 MHz 1809 3 GHz 9 50 40 30 20 10 135 459 909 MLB994 Vcg 2 8 V lc 2 15 mA Fig 17 Common emitter forward transmission coefficient S51 typical values August 1995 10 Philips Semiconductors Product specification BFG67W BFG67W X BFG67W XR 90 3 GHz 135 45 180 40 MHz 9 0 25 0 20 0 15 0 10 0 05 vm 909 MLB995 NPN 8 GHz wideband transistor Voce 8 V lc 2 15 mA Fig 18 Common emitter reverse transmission coefficient S42 typical values MLB996 1 0 Vcg 8 V Io 15 mA Z 50 Q Fig 19 Common emitter output reflection coefficient S22 typical values August 1995 11 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR SPICE parameters for the BFG67W crystal SEQUENCE No PARAMETER VALUE UNIT SEQUENCE No PARAMETER VALUE UNIT 36 1 VJS 750 0 mV 370 MJS 0 000 38 FC
5. O 0 BFG6W O DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W X BFG67W XR NPN 8 GHz wideband transistor Product specification August 1995 File under Discrete Semiconductors SC 14 Philips Semiconductors PHILIPS Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR FEATURES High power gain Low noise figure e Gold metallization ensures excellent reliability APPLICATIONS They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment DESCRIPTION NPN silicon planar epitaxial transistors in plastic 4 pin MARKING TYPE NUMBER CODE BFG67W BFG67W X BFG67W XR V7 PINNING PIN DESCRIPTION Top view MBK523 BFG67W see Fig 1 1 collector Fig 1 SOT343 2 base 3 emitter dual emitter SOT343 and SOT343R 3 A packages emitter x 3 BFG67W XR see Fig 2 Top view MSB842 collector 2 hase Fig 2 SOT343R 4 emitter QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT open emitter VcBo collector base voltage wees collector emitter voltage collector current DC open base total power dissipation DC current gain up to T 85 C lc 15 mA Vog 5V feedback capacitance transition frequency lc 2 0 Voce 8V f 1 MHz lc 15 mA
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7. Vcg 8 V f 500 MHz Tamb 25 C maximum unilateral power gain F noise figure lc 15 mA Vcg 8 Vif 1 GHz Tamb 25 C T s Topt lc 5 mA Vce 8 V f 2 GHz 22 August 1995 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT collector base voltage open emitter collector emitter voltage open base emitter base voltage open collector collector current DC total power dissipation up to T 85 C see Fig 3 note 1 storage temperature Tj junction temperature 175 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin js thermal resistance from junction to soldering point up to Ts 85 C note 1 180 K W Note to the Limiting values and Thermal characteristics 1 Tsis the temperature at the soldering point of the collector pin MBG248 600 Ptot mW 400 200 Fig 3 Power derating curve August 1995 3 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT collector base breakdown open emitter lc 10 uA Ie 0 v
8. eband transistor BFG67W X BFG67W XR MBB308 4 MBB309 2 TTI f 2GHz Ic 30 mA dB dB c 3 3 1GHz 15 mA 900 MHz 5 mA T 500 MHz 5 1 1 0 0 1 10 100 2 3 4 Ig mA 1w Ne f MHz n Vcg 8 V Vcg 8 V Fig 11 Minimum noise figure as a function Fig 12 Minimum noise figure as a function of of collector current typical values frequency typical values August 1995 7 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR stability ircl circle 10 0 8 0 6 04 unstable PA 0 2 region L 180 Im 0 0 MLB990 l1 190 f 500 MHz Vcg 8 V lo 5 mA Zo 50 Q 90 Fig 13 Common emitter noise figure circles typical values stability circle 90 1 0 135 0 8 8 fos 0 6 M Fmin t x 0 4 1 0 2 0 2 1809 0 i ij E 0 0 J l unstable N ST Lg region SS VA 0 2 is 4 5 pe RUR F 4dB i 0 5 22 135 45 1 MLB991 L10 f 1 GHz Vee 8 V lc 5 mA Z 50 Q 90 Fig 14 Common emitter noise figure circles typical values August 1995 8 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR 90 1 0 0 8 2 0 6 Ve N 0 2 Fmin 2 20 dB lor i
9. hout notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 123065 1500 01 pp16 Document order number Date of release August 1995 9397 739 20011 Philips Semiconductors PHILIPS PHILIPS
10. llector base voltage typical values MLB985 GHz Ic mA f 2 GHz VcE 28V Tamb 25 C Fig 6 Transition frequency as a function of collector current typical values August 1995 5 Philips Semiconductors NPN 8 GHz wideband transistor 30 MLB986 gain dB 20 MSG Gmax G UM 10 0 0 10 20 30 Ic mA f21GHz Vcg 8 V Fig 7 Gain as a function of collector current typical values Product specification BFG67W BFG67W X BFG67W XR MLB987 50 gain dB 40 30 20 lc 5 mA Vcg 8 V Fig 8 Gainas afunction of frequency typical values 50 MLB988 gain dB 40 9 UM MSG 30 20 G max 10 0 10 10 10 104 f MHz lc 2 15 mA Vce 8 V Fig 9 Gain as a function of frequency typical values MLB989 50 gain dB 40 G UMT 30 20 lc 30 mA Vce 8 V Fig 10 Gain as a function of frequency typical values August 1995 Philips Semiconductors Product specification BFG67W NPN 8 GHz wid
11. miting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale August 1995 14 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR NOTES August 1995 15 Philips Semiconductors a worldwide company Argentina IEROD Av Juramento 1992 14 b 1428 BUENOS AIRES Tel 541 786 7633 Fax 541 786 9367 Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 02 805 4455 Fax 02 805 4466 Austria Triester Str 64 A 1101 WIEN P O Box 213 Tel 01 60 101 1236 Fax 01 60 101 1211 Belgium Postbus 90050 5600 PB EINDHOVEN The Netherlands Tel 31 40 783 749 Fax 31 40 788 399 Brazil Rua do Rocio 220
12. oltage collector emitter breakdown open base lc 10 mA Ip 0 voltage emitter base breakdown open collector le 10 uA lg 0 voltage collector cut off current open emitter Vcg 5 V Ip 0 DC current gain lc 15 mA Vog2 5V transition frequency lc 15 mA Vcg 8 V f 500 MHz Tamb 25 C collector capacitance le ie 0 Vce 8 V f 1 MHz emitter capacitance lc ic 0 Veg 0 5 V f 1 MHz feedback capacitance lc 0 Vce 8 V f 1 MHz maximum unilateral power lc 15 mA Vce 8 V f 1 GHz gain note 1 Tamb 25 C lc 15 mA Vce 8 V f 2 GHz Tamb 25 C noise figure I5 Topt lc 5 mA Vcg 8 V f 1 GHz T s Topt lc 15 mA Vcg 8 V f 1 GHz T s Topt lc 5 mA Vcg 8 V f 2 GHz Note 2 l S 1 Gym is the maximum unilateral power gain assuming s12 is zero Gy 10 log a dB 1 844 1 24 August 1995 4 Philips Semiconductors Product specification BFG67W NPN 8 GHz wideband transistor BFG67W X BFG67W XR MBB301 MLB984 120 1 Cre pF h FE j seems 0 8 80 0 6 0 4 40 0 2 0 0 0 20 40 60 0 4 8 12 16 lc mA Vcg V Vce 5 V lc 0 f 1 MHz Fig 4 DC current gain as a function of collector Fig 5 Feedback capacitance as a function of current typical values co

PHILIPS BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor handbook

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