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PHILIPS BFG540 BFG540/X BFG540/XR handbook

1. 40 MHz 3 GHz 180 f 50 90 MRA757 lc 40 mA VcE 8V Fig 18 Common emitter forward transmission coefficient S21 2000 May 23 9 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR 90 135 45 3 GHz 180 40 MHz 0 0 25 0 20 0 15 0 10 0 05 vm k 0 MRA758 lc 40 mA Vcpg 8 V Fig 19 Common emitter reverse transmission coefficient S42 MRA759 1 1 0 lc 40 mA Vcg 8 V Zo 50 Q Fig 20 Common emitter output reflection coefficient S22 2000 May 23 10 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR PACKAGE OUTLINES Plastic surface mounted package 4 leads SOT143B detail X 0 1 LLLLLLLIUI SO Disc scale DIMENSIONS mm are the original dimensions A1 max UNIT A b 1 1 mm 09 0 1 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT143B E 97 02 28 2000 May 23 11 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR Plastic surface mounted package revers
2. 1 Please consult the most recently issued data sheet before initiating or completing a design DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2000 May 23 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to full
3. 40 mA Vcg 8 V Z Zs 75 Q Tamb 25 C Vp Vo Vq Vo 6 dB V Vo 6 dB fp 795 25 MHz fy 803 25 MHz f 805 25 MHz measured at fip q r 793 25 MHz 4 lg 2 40 mA Vcg 8 V Vo 275 mV Tamb 25 C fp 250 MHz fq 560 MHz measured at fip g 810 MHz 2000 May 23 4 Philips Semiconductors NPN 9 GHz wideband transistor Product specification BFG540 BFG540 X MBG249 600 250 MRA749 h Piot FE mW 200 400 150 100 200 50 0 0 0 50 100 150 200 107 1071 1 NUN 102 T C c mA VcE 8 V Tj E25 0 Vcg 10 V Fig 4 DC current gain as a function of collector Fig 3 Power derating curve current MRA750 MRA751 1 12 Cre pF fr 0 8 GHz 8 0 6 Aes 0 4 4 0 2 0 9 1 2 0 4 8 12 107 1 10 10 Vcp V lc mA lc 0 f 1 MHz f 1 GHZ Tamb 25 C Fig 5 Feedback capacitance as a function of Fig 6 Transition frequency as a function of collector base voltage collector current 2000 May 23 Philips Semiconductors NPN 9 GHz wideband transistor MRA752 25 gain 9
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5. voltage Ree 0 DC collector current total power dissipation Ts lt 60 C note 1 DC current gain lc 40 mA Voce 8 V T 25 C feedback capacitance lc 0 Vce 8 V f 1 MHz transition frequency lc 40mA Vcg 8 Vif 1 GHz Tamb 25 C maximum unilateral power gain lc 40 mA Vcg 8 V f 900 MHz Tamb 25 C lc 40 mA Vcg 8 V f 2 GHz Tamb 25 C insertion power gain lc 40 mA Vcg 8 V f 900 MHz Tamb 25 C noise figure T s Topti lc 10 mA Vcg 8 V f 900 MHz Tamb 25 C T s Topt lc 40 mA Vcg 8 V f 900 MHz Tamb 25 C T s Topti lc 10 mA Vcg 8 V f 2 GHZ Tamb 25 C LIMITING VALUES In accordance with the Absolute Maximum System IEC 60134 SYMBOL PARAMETER CONDITIONS VcBo collector base voltage open emitter Voces collector emitter voltage Ree 0 emitter base voltage open collector DC collector current total power dissipation Ts lt 60 C note 1 storage temperature junction temperature Note 1 Tsis the temperature at the soldering point of the collector pin THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j s thermal resistance from junction to soldering point Ts lt 60 C note 1 290 K W Note 1 Tsis the temperature at the soldering point of the collector pin 2000 May 23 3 Philips Semiconductors Product specification NPN 9
6. B Msa 20 M Gmax GUM 15 10 5 0 0 20 40 Ic mA 60 Voce 8 V f 900 MHz MSG maximum stable gain Gmax maximum available gain Gum maximum unilateral power gain Fig 7 Gain as a function of collector current Product specification BFG540 BFG540 X BFG540 XR MRA753 25 gain dB 20 15 Gmax 10 Gum 5 0 0 20 40 Ic mA 60 Vcg 8 V f 2 GHz Gmax Maximum available gain Gum maximum unilateral power gain Fig 8 Gain as a function of collector current MRA754 50 gain dB Gum 40 30 20 lc 10 mA VcE 28V Guy maximum unilateral power gain Fig 9 Gain as a function of frequency MSG maximum stable gain Gmax maximum available gain MRA755 50 gain dB Gum 40 30 20 Ic 40 mA VcE 28V Guy maximum unilateral power gain MSG maximum stable gain Gmax maximum available gain Fig 10 Gain as a function of frequency 2000 May 23 Philips Semiconductors NPN 9 GHz wideband transistor MEA973 10 20 30 40 50 60 Ic mA Fig 11 Intermodulation distortion as a function of collector curren
7. GHz wideband transistor BFG540 BFG540 X BFG540 XR CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT collector cut off current le 0 Vcg 8V DC current gain lc 40 mA Vce 8 V emitter capacitance lc ie 0 Veg 0 5 V f 1 MHz collector capacitance le ie 0 Vcg 8 V f 1 MHz feedback capacitance lc 0 Vcg 8 V f 1 MHz transition frequency lc 40 mA Vce 8 V f 1 GHz Tamb 25 C maximum unilateral power gain Ic 40 mA Vcg 8 V f 900 MHz note 1 Tamb 25 C lc 40 mA Vcg 8 V f 2 GHz Tamb 25 C insertion power gain lc 40 mA Vcg 8 V f 900 MHz Tamb 25 C noise figure T s Topti lc 10 mA Vcg 8 V f 900 MHZ Tamb 25 C T s Topti lc 40 mA Vcg 8 V f 900 MHz Tamb 25 C T s Topti lc 10 mA Vcg 8 V f 2 GHZ Tamb 25 C output power at 1 dB gain lc 40 mA Voce 8 V RL 500 compression f 900 MHZ Tamb 25 C third order intercept point note 2 output voltage second order intermodulation distortion Notes Isa 1 Gum is the maximum unilateral power gain assuming s12 is zero and Gyy 10 log 5 dB 1 S44 1 825 2 Voe 8 V Ic 40 mA Ry 50 Q Tam 25 C fp 900 MHz fq 902 MHz measured at f 2p q 898 MHz and f 2q p 904 MHz 3 dim 60 dB DIN 45004B Ic
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9. O 0 BFe54g1 0 E DISCRETE SEMICONDUCTORS DATA SHEET BFG540 BFG540 X BFG540 XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 03 Philips PHILIPS Semiconductors DH l LI L Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540 BFG540 X BFG540 XR FEATURES High power gain Low noise figure e High transition frequency e Gold metallization ensures excellent reliability DESCRIPTION NPN silicon planar epitaxial transistors intended for wideband applications in the GHz range such as analog and digital cellular telephones cordless telephones CT1 CT2 DECT etc radar detectors satellite TV tuners SATV MATV CATV amplifiers and repeater amplifiers in fibre optical systems The transistors are mounted in plastic SOT143B and SOT143R packages 2000 May 23 PINNING PIN DESCRIPTION BFG540 Fig 1 Code N37 1 collector 3 emitter BFG540 X Fig 1 Code N43 1 collector 2 emitter 3 base BFG540 XR Fig 2 Code N49 collector 2 emitter 3 base 4 emitter 2 Top view MSB014 Fig 1 SOT143B Top view Fig 2 SOT143R MSB035 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VcBo collector base voltage open emitter Voces collector emitter
10. a 5 v 11000 BEOGRAD Tel 381 11 3341 299 Fax 381 11 3342 553 Internet http www semiconductors philips com SCA69 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613516 04 pp16 Philips Semiconductors Date of release 2000 May 23 Document order number 9397 750 07059 Lett make things better S PHILIPS
11. e pinning 4 leads SOT143R Lp detail X 0 1 2mm l 130 1 1 97 T TT l p E D es O GAA 1 scale DIMENSIONS mm are the original dimensions A1 max UNIT mm j 0 1 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT143R SC 61B E Q 99 09 13 ISSUE DATE 2000 May 23 12 Philips Semiconductors NPN 9 GHz wideband transistor Product specification BFG540 BFG540 X BFG540 XR DATA SHEET STATUS PRODUCT 1 DATA SHEET STATUS STATUS DEFINITIONS Objective specification Development This data sheet contains the design target or goal specifications for product development Specification may change in any manner without notice Preliminary specification Qualification This data sheet contains preliminary data and supplementary data will be published at a later date Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product Product specification Production This data sheet contains final specifications Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product Note
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13. t Product specification BFG540 BFG540 X BFG540 XR MEA972 10 20 30 40 50 60 Ic mA Fig 12 Second order intermodulation distortion as a function of collector current MRA760 5 Fmin Gass dB f 900 MHz dB 1 i 1000 MHz G 3 ass 2000 MHz 410 2000 MHz ee p 2 5 71 F min 1000 MHz 900 MHz 1 500 MHz 0 0 o 1 1 10 Ic mA 0 Vcg 2 8 V Fig 13 Minimum noise figure and associated available gain as functions of collector current MRA761 2 2 3 104 10 10 f MHz 0 Vcg 8 V Fig 14 Minimum noise figure and associated available gain as functions of frequency 2000 May 23 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR MRA762 110 lc 10 mA Vc 8 V Zo 50 Q f 900 MHz MRA763 1 1 0 lc 10 mA Vce 8 V Zo 50 Q f 2 GHz Fig 16 Noise circle figure 2000 May 23 8 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR MRA756 L10 lc 40 mA Vcg 8 V Zo 50 Q Fig 17 Common emitter input reflection coefficient S 90 135 45
14. y indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes without notice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR NOTES 2000 May 23 14 Philips Semiconductors Product specification BFG540 BFG540 X NPN 9 GHz wideband transistor BFG540 XR NOTES 2000 May 23 15 Philips Semiconductors Argentina see South America Australia 3 Figtree Drive HOMEBUSH NSW 2140 Tel 61 2 9704 8141 Fax 61 2 9704 8139 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 1 60 101 1248 Fax 43 1 60 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 20 0733 Fax 375 172 20 0773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51

PHILIPS BFG540 BFG540/X BFG540/XR handbook

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