PHILIPS BFG480W handbook
Contents
1. 135 45 90 MGR631 lc 80 mA Vee 22V Fig 10 Common emitter forward transmission coefficient S21 typical values 1998 Oct 21 7 Philips Semiconductors Product specification NPN wideband transistor BFG480W 90 135 45 3 GHz jum 1E 04 0 3 0 2 0 1 40 MHz 135 45 90 MGR632 lc 80 mA Vcg 22 V Fig 11 Common emitter reverse transmission coefficient S12 typical values MGR633 lc 80 MA Vcg 2 V Zo 500 Fig 12 Common emitter output reflection coefficient S22 typical values 1998 Oct 21 8 Philips Semiconductors NPN wideband transistor Noise data Vcg 2 V typical values f MHz Fmin dB Imag Tangle Q 0 41 96 1 0 21 0 31 106 6 0 14 0 27 118 4 0 12 0 26 131 7 0 10 0 28 143 2 0 10 0 39 166 2 0 07 0 49 176 0 0 07 0 57 179 5 0 07 0 45 177 3 0 18 0 57 171 9 0 09 0 49 0 08 0 46 0 09 0 44 0 09 0 43 168 4 0 09 0 44 165 3 0 10 0 44 163 7 0 10 0 46 158 3 0 11 0 52 150 2 0 14 0 56 147 7 0 18 2 8 0 60 146 1 0 22 APPLICATION INFORMATION RF performance at T lt 60 C in a common emitter test circuit see Figs 18 and 19 Product specification BFG480W MGR634 900 MHz Ic mA Vcg 2 V Fig 13 Minimum noise figure as a function of collector current2. Tel 65 350 2538 Fax 65 251 6500 Slovakia see Austria Slovenia see Italy South Africa S A PHILIPS Pty Ltd 195 215 Main Road Martindale 2092 JOHANNESBURG P O Box 7430 Johannesburg 2000 Tel 27 11 470 5911 Fax 27 11 470 5494 South America Al Vicente Pinzon 173 6th floor 04547 130 SAO PAULO SP Brazil Tel 55 11 821 2333 Fax 55 11 821 2382 Spain Balmes 22 08007 BARCELONA Tel 34 93 301 6312 Fax 34 93 301 4107 Sweden Kottbygatan 7 Akalla S 16485 STOCKHOLM Tel 46 8 5985 2000 Fax 46 8 5985 2745 Switzerland Allmendstrasse 140 CH 8027 Z RICH Tel 41 1 488 2741 Fax 41 1 488 3263 Taiwan Philips Semiconductors 6F No 96 Chien Kuo N Rd Sec 1 TAIPEI Taiwan Tel 886 2 2134 2865 Fax 886 2 2134 2874 Thailand PHILIPS ELECTRONICS THAILAND Ltd 209 2 Sanpavuth Bangna Road Prakanong BANGKOK 10260 Tel 66 2 745 4090 Fax 66 2 398 0793 Turkey Talatpasa Cad No 5 80640 G LTEPE ISTANBUL Tel 90 212 279 2770 Fax 90 212 282 6707 Ukraine PHILIPS UKRAINE 4 Patrice Lumumba str Building B Floor 7 252042 KIEV Tel 380 44 264 2776 Fax 380 44 268 0461 United Kingdom Philips Semiconductors Ltd 276 Bath Road Hayes MIDDLESEX UBS 5BX Tel 44 181 730 5000 Fax 44 181 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11
3. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1998 Oct 21 14 Philips Semiconductors Product specification NPN wideband transistor BFG480W NOTES 1998 Oct 21 15 Philips Semiconductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 160 1010 Fax 43 160 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 200 733 Fax 375 172 200 773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel
4. typical values MODE OF OPERATION Ica PL Gp Nc mA mW dB Pulsed class AB lt 1 2 ty 5 ms 2 3 6 1 100 typ 13 5 typ 45 1998 Oct 21 Philips Semiconductors NPN wideband transistor MGR635 16 80 Gp nc dB 96 dB Gp 26 12 60 nc 8 40 4 20 0 0 10 14 18 22 26 PL dBm Pulsed class AB operation lt 1 2 tj 5 ms f 2 GHz Vcg 24 Vi Ica 1 mA tuned at P 100 mW Fig 14 Power gain and collector efficiency as a function of load power typical values Product specification BFG480W MGR636 16 80 Gp nc dB 12 P 60 nc 8 40 4 20 0 0 10 14 18 26 PL dBm Pulsed class AB operation lt 1 2 tj 5 ms f 2 GHz Vcg 3 6 Vi log 1 mA tuned at P 100 mW Fig 15 Power gain and collector efficiency as a function of load power typical values MGR637 1 8 1 85 1 9 1 95 Vcg 3 6 Vi Ica 1 mA P 100 mW Ts lt 60 C Fig 16 Input impedance as function of frequency series components typical values MGR638 30 ZL RL Q 20 10 XL 0 1 8 1 85 1 9 1 95 Vcg 3 6 Vi Ica 1 mA P 100 mW Ts lt 60 C Fig 17 Load impedance as a function of frequency series components typical val
5. 5 mA lg 0 le 100 uA Io 0 IcBo collector base leakage current DC current gain Vcg 5 V Vee 0 lc 80 mA Vcg 2 V see Fig 3 collector capacitance emitter capacitance lg 2 ig 0 Vog2 2 V fed MHz lc ie 06 Veg 0 5 V f 1 MHz feedback capacitance transition frequency lc 0 Vcg 2 V f 1 MHz see Fig 4 lc 80 mA Vce 2 V f 2 GHz Tamb 25 C see Fig 5 maximum power gain note 1 insertion power gain noise figure lc 80 mA Vce 2 V f 2 GHz Tamb 25 C see Figs 7 and 8 lc 80 mA Vce 2 V f 2 GHz Tamb 25 C see Fig 8 lc 8 mA Vce 2 V f 900 MHz Ts Topt see Fig 13 lc 8 mA Vce 2 V f 2 GHz Ts opt see Fig 13 Pi4 output power at 1 dB gain Class AB lt 1 2 tp 5 ms 20 dBm compression Vcg 3 6 V Ico 1 mA f 2 GHz ITO third order intercept point lc 80 mA Vce 2 V f 2 GHz 28 dBm Zs Zs opts Z Z opt Note 2 Notes 1 Gmax is the maximum power gain if K gt 1 If K lt 1 then Gmax MSG see Figs 6 7 and 8 2 Zgis optimized for noise Z is optimized for gain 1998 Oct 21 Philips Semiconductors NPN wideband transistor MGR624 100 hFE 80 40 20 0 50 100 Ic mA 150 Vcg 22 V Fig 3 DC current gain as a function of collector current typical values Product specification BFG480W MGR
6. 000 BEOGRAD Tel 381 11 625 344 Fax 381 11 635 777 Internet http www semiconductors philips com SCA60 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 125104 00 03 pp16 Philips Semiconductors Date of release 1998 Oct 21 Document order number 9397 750 04587 Lott make things better S PHILIPS
7. 359 2 689 211 Fax 359 2 689 102 Canada PHILIPS SEMICONDUCTORS COMPONENTS Tel 1 800 234 7381 China Hong Kong 501 Hong Kong Industrial Technology Centre 72 Tat Chee Avenue Kowloon Tong HONG KONG Tel 852 2319 7888 Fax 852 2319 7700 Colombia see South America Czech Republic see Austria Denmark Prags Boulevard 80 PB 1919 DK 2300 COPENHAGEN S Tel 45 32 88 2636 Fax 45 31 57 0044 Finland Sinikalliontie 3 FIN 02630 ESPOO Tel 358 9 615800 Fax 358 9 61580920 France 51 Rue Carnot BP317 92156 SURESNES Cedex Tel 33 1 40 99 6161 Fax 33 1 40 99 6427 Germany HammerbrookstraBe 69 D 20097 HAMBURG Tel 49 40 23 53 60 Fax 49 40 23 536 300 Greece No 15 25th March Street GR 17778 TAVROS ATHENS Tel 30 1 4894 339 239 Fax 30 1 4814 240 Hungary see Austria India Philips INDIA Ltd Band Box Building 2nd floor 254 D Dr Annie Besant Road Worli MUMBAI 400 025 Tel 91 22 493 8541 Fax 91 22 493 0966 Indonesia PT Philips Development Corporation Semiconductors Division Gedung Philips Jl Buncit Raya Kav 99 100 JAKARTA 12510 Tel 62 21 794 0040 ext 2501 Fax 62 21 794 0080 Ireland Newstead Clonskeagh DUBLIN 14 Tel 353 1 7640 000 Fax 353 1 7640 200 Israel RAPAC Electronics 7 Kehilat Saloniki St PO Box 18053 TEL AVIV 61180 Tel 972 3 645 0444 Fax 972 3 649 1007 Italy PHILIPS SEMICONDUCTORS Piazza IV Novembre 3 20124 MILANO Tel 39 2 6752 2531 Fax 3
8. 625 400 200 lc 0 f 1 MHz Fig 4 Feedback capacitance as a function of collector base voltage typical values MGR626 10 2 3 10 10 Ic mA 10 f 2 GHz VoeE 2V Tamb 25 C Fig 5 Transition frequency as a function of collector current typical values MGR627 30 gain MSG 9B Gmax 20 S21 10 0 0 40 80 120 160 Ic mA f 900 MHz Voce 2V Fig 6 Gain as a function of collector current typical values 1998 Oct 21 Philips Semiconductors Product specification NPN wideband transistor BFG480W MGR628 MGR629 20 50 gain gain dB Gmak dB 16 i 40 MSG S21 12 a S21 Gmax 8 20 4 10 0 0 0 40 80 120 160 10 102 103 104 Ic mA f MHz Vce 2 V f 2 GHz lc 80 mA Vcg 2 V Fig 7 Gain as a function of collector current Fig 8 Gain as a function of frequency typical values typical values 1998 Oct 21 6 Philips Semiconductors Product specification NPN wideband transistor BFG480W MGR630 lc 80 MA Vcg 2 V Zo 50 Q Fig 9 Common emitter input reflection coefficient S41 typical values
9. 9 2 6752 2557 Japan Philips Bldg 13 37 Kohnan 2 chome Minato ku TOKYO 108 8507 Tel 81 3 3740 5130 Fax 81 3 3740 5077 Korea Philips House 260 199 Itaewon dong Yongsan ku SEOUL Tel 82 2 709 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 49 5 800 234 7381 For all other countries apply to Philips Semiconductors International Marketing amp Sales Communications Building BE p P O Box 218 5600 MD EINDHOVEN The Netherlands Fax 31 40 27 24825 Philips Electronics N V 1998 a worldwide company Middle East see Italy Netherlands Postbus 90050 5600 PB EINDHOVEN Bldg VB Tel 31 40 27 82785 Fax 31 40 27 88399 New Zealand 2 Wagener Place C P O Box 1041 AUCKLAND Tel 64 9 849 4160 Fax 64 9 849 7811 Norway Box 1 Manglerud 0612 OSLO Tel 47 22 74 8000 Fax 47 22 74 8341 Pakistan see Singapore Philippines Philips Semiconductors Philippines Inc 106 Valero St Salcedo Village P O Box 2108 MCC MAKATI Metro MANILA Tel 63 2 816 6380 Fax 63 2 817 3474 Poland UI Lukiska 10 PL 04 123 WARSZAWA Tel 48 22 612 2831 Fax 48 22 612 2327 Portugal see Spain Romania see Italy Russia Philips Russia Ul Usatcheva 35A 119048 MOSCOW Tel 7 095 755 6918 Fax 7 095 755 6919 Singapore Lorong 1 Toa Payoh SINGAPORE 319762
10. D 0 BFG480 0 O DISCRETE SEMICONDUCTORS DATA SHEET BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09 Philips PHILIPS Semiconductors DH LI L Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency emitter Low noise figure base High transition frequency emitter Emitter is thermal lead collector Low feedback capacitance Linear and non linear operation 3 4 APPLICATIONS e RF front end with high linearity system demands CDMA e Common emitter class AB driver 2 1 Top view MSB842 DESCRIPTION Marking code P6 NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4 pin dual emitter Fig 1 Simplified outline SOT343R SOT343R plastic package QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT total power dissipation T lt 60 C transition frequency lc 80 MA Vcg 2 V f 2 2 GHz Tamb 25 C maximum gain lc 80 mA Vcg 2 V f 2 2 GHz Tamb 25 C noise figure lc 8 mA Vce 2 V f 2 GHz Ts Topt power gain Pulsed class AB lt 1 2 tp 5 ms Vcg 3 6 V f 2 GHz P 100 mW collector efficiency Pulsed class AB lt 1 2 tp 5 ms Vcg 2 3 6 V f 2 GHz P 100 mW CAUTION This product is supplied in anti static packing to p
11. d plane Earth connections from the component side to the ground plane are made by through metallization Fig 19 Printed circuit board and component layout for 2 GHz class AB test circuit in Fig 18 1998 Oct 21 12 Philips Semiconductors Product specification NPN wideband transistor BFG480W PACKAGE OUTLINE Plastic surface mounted package reverse pinning 4 leads SOT343R L Lp detail X DIMENSIONS mm are the original dimensions A1 UNIT A bp by da 0 4 0 7 0 8 Ee 0 3 0 5 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT343R E 97 05 21 ISSUE DATE 1998 Oct 21 13 Philips Semiconductors Product specification NPN wideband transistor BFG480W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device
12. revent damage caused by electrostatic discharge during transport and handling For further information refer to Philips specs SNW EQ 608 SNW FQ 302A and SNW FQ 302B 1998 Oct 21 2 Philips Semiconductors Product specification NPN wideband transistor BFG480W LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VcBo collector base voltage open emitter 14 5 V VcEo collector emitter voltage open base 4 5 V emitter base voltage open collector collector current DC total power dissipation Ts lt 60 C note 1 see Fig 2 storage temperature Tj operating junction temperature 150 C Note 1 Tsis the temperature at the soldering point of the emitter pins THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rin j s thermal resistance from junction to soldering point 250 K W MGR623 500 Prot mW 400 300 200 100 0 0 40 80 120 160 Tg C Fig 2 Power derating curve 1998 Oct 21 3 Philips Semiconductors Product specification NPN wideband transistor BFG480W CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V BR CBO collector base breakdown voltage lc 50 WA lg 0 V BR CEO V BR EBO collector emitter breakdown voltage emitter base breakdown voltage lc
13. ues 1998 Oct 21 10 Philips Semiconductors NPN wideband transistor L1 1 EB RF input 509 9 4 RUPEE d C2 Fig 18 Common emitter test circuit for class AB operation at 2 GHz List of components used in test circuit see Figs 18 and 19 COMPONENT DESCRIPTION VALUE Product specification BFG480W C5 i RF output 500 C4 T MGM221 C1 C5 multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 1 24 pF multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 1 1nF stripline note 2 stripline note 2 100 Q 50 Q stripline note 2 50 Q 5 x 0 8 mm 6 x 0 8 mm L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300 R1 metal film resistor 220 Q 0 4 W R2 R3 metal film resistor 10 Q 0 4 W TR1 NPN transistor BC817 9335 895 20215 Notes 1 American Technical Ceramics type 100A or capacitor of same quality 2 The striplines are on a double copper clad printed circuit board with PTFE fibre glass dielectric e 6 15 tan 6 0 0019 thickness 0 64 mm copper cladding 35 um 1998 Oct 21 11 Philips Semiconductors Product specification NPN wideband transistor BFG480W RSEN NUNC C6 i MBK827 Dimensions in mm The components are situated on one side of the copper clad PTFE fibre glass board the other side is unetched and serves as a groun
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PHILIPS BFG480W handbook