PHILIPS BFG31 handbook
Contents
1. 0 80 3 1 80 max i7 23 7 geo 910 185 B max 4x Dimensions in mm Fig 10 SOT223 1995 Sep 12 6 MSA035 1 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so2. at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1995 Sep 12 7
3. D 0 BFG319 n O DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992 File under Discrete Semiconductors SC14 Philips PHILIP S Semiconductors DH LI p Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING High output voltage capability PIN DESCRIPTION e High gain bandwidth product emitter Good thermal stability base Gold metallization ensures emitter excellent reliability collector DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope Top view MSBO002 1 It is intended for wideband amplifier applications Fig 1 SOT223 NPN complement is the BFG97 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT collector emitter voltage open base DC collector current total power dissipation up to T 135 C note 1 DC current gain lc 70 mA Vcg 10 V Tamb 25 C transition frequency lc 70 mA Vcg 10 V f 500 MHz Tamb 25 C maximum unilateral power Ic 70 mA Vcg 10 V gain f 800 MHz Tamb 25 C output voltage lc 100 mA Vog 10 V Ri 75 Q Tamb 25 C LIMITING VALUES In accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS VcBo collector base voltage open emitter VcEo collector emitter voltag
4. e open base VEBO emitter base voltage open collector lc DC collector current Piot total power dissipation up to Ts 135 C note 1 Tstg storage temperature 65 Tj junction temperature x Note 1 Tsis the temperature at the soldering point of the collector tab 1995 Sep 12 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j s thermal resistance from junction to up to Ts 135 C note 1 40 K W soldering point Note 1 Tsis the temperature at the soldering point of the collector tab CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V ggcBo Collector base breakdown voltage open emitter lc 10 mA V BR EBO emitter base breakdown voltage open collector lg 0 1 mA hee DC current gain lc 70 mA Vcg 10 V Tamb 25 C a collector base capacitance lc 0 Vcg 10 V f 1 MHz emitter base capacitance lc 0 Veg 10 V f 1 MHz a feedback capacitance lc 0 Voce 10 V f 1 MHz Tamb 25 C Cob Ceb Cre fr transition frequency lc 70 mA Vcg 10 V f 500 MHz Tamb 25 C Gum maximum unilateral power gain note 1 lc 70 mA Vcg 10 V f 500 MHz Tamb 25 C lc 70 mA VcE 2 10V f 800 MHz Tamb 25 C Vo output voltage Notes 1 Gum
5. ilips Semiconductors PNP 5 GHz wideband transistor MBB348 40 d im dB 45 50 55 60 65 40 60 80 100 Voe 10 V Vo 650 mV Tamb 25 C fpq r 443 25 MHz Fig 6 Intermodulation distortion as a function of collector current Product specification BFG31 MBB349 50 d im dB 55 60 65 40 60 80 100 120 Vcg 10 V Vo 550 mV Tamb 25 C fpq r 848 25 MHz Fig 7 Intermodulation distortion as a function of collector current MBB350 30 40 50 60 10 30 50 70 90 110 I mA Vcg 10 V Vo 50 dBmV Tamb 25 C f p q 450 MHz Fig 8 Second order intermodulation distortion as a function of collector current 1995 Sep 12 MBB351 30 40 50 60 10 30 50 70 90 110 I mA Vcg 10 V Vo 50 dBmV Tamb 25 C f p q 810 MHz Fig 9 Second order intermodulation distortion as a function of collector current Philips Semiconductors PNP 5 GHz wideband transistor PACKAGE OUTLINE Product specification BFG31 S seating plane U0 0 2 A 10
6. is the maximum unilateral power gain assuming S12 is zero and Gy 10 log 2 dim 60 dB Ic 70 mA Vcg 10 V Ry 75 Q Tamb 25 C Vp Vo at dim 60 dB fp 850 25 MHz Vg Vo 6 dB fy 858 25 MHz V Vo 6 dB fr 860 25 MHz measured at f p q r 848 25 MHz 3 dim 60 dB DIN 450048 Ic 70 mA Vcg 10 V Rr 75 Q Tamb 25 C Vp Vo at dim 60 dB fy 445 25 MHz Va Vo 6 dB fy 453 25 MHz Vr Vo 6 dB f 455 25 MHz measured at fip4g r 443 25 MHz dB d S447 a 24 1995 Sep 12 3 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 MBB344 MBB345 12 go Ptot w 1 0 FE 60 0 8 0 6 40 0 4 20 0 2 0 0 1 1 200 1 2 0 50 00 es de 0 00 ic mA 00 VcE 2 10 V Tamb 25 C Fig 3 DC current gain as a function of collector Fig 2 Power derating curve current MBB346 MBB347 6 8 Cre fT pF GHz 5 6 4 4 3 2 2 1 0 0 10 20 yep wy 90 0 Sh igoma 1 f 1 MHZ Tamb 25 C Vcg 10 V Tamb 25 C Fig 4 Feedback capacitance as a function of Fig 5 Transition frequency as a function of collector emitter voltage collector current 1995 Sep 12 4 Ph
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PHILIPS BFG31 handbook