PHILIPS BFG10; BFG10/X handbook
Contents
1. total power dissipation up to T 60 C see Fig 2 note 1 Tstg storage temperature 65 150 C Tj junction temperature 175 C Note 1 Tsis the temperature at the soldering point of the collector pin 1995 Aug 31 Philips Semiconductors NPN 2 GHz RF power transistor THERMAL CHARACTERISTICS Product specification BFG10 BFG10 X PARAMETER SYMBOL CONDITIONS VALUE UNIT Rth j s thermal resistance from junction to up to T 60 C note 1 290 K W soldering point Piot 400 mW Note 1 Tsis the temperature at the soldering point of the collector pin CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vipr cBo collector base breakdown voltage open emitter Ic 0 1 mA ViBR ceo collector emitter breakdown voltage open base Ic 5 mA V BR EBO emitter base breakdown voltage open collector lg 0 1 mA IcES collector leakage current Voce 5 V Vee 0 hee DC current gain lc 50 mA Vce 5 V collector capacitance le ig 0 Vcg 3 6 V f 1 MHz Cre feedback capacitance lce 0 Vce 3 6 V f 1 MHz 2 pF MLC818 MLC819 500 2 0 Ptot Co ny pF 400 15 300 1 0 200 0 5 100 0 0 0 50 100 150 200 0 2 4 6 8 10 Ts C Vcg V lc 0 f 1 MHz Fig 3 Collector capacitance as a2. PARAMETER VALUE UNIT 1 IS 2 714 fA 2 BF 102 8 3 NF 0 998 4 VAF 28 12 V 5 IKF 6 009 A 6 ISE 403 2 pA 7 NE 2 937 8 BR 31 01 9 NR 0 999 10 VAR 2 889 V 11 IKR 0 284 A 12 ISC 1 487 fA 13 NC 1 100 14 RB 3 500 Q 15 IRB 1 000 uA 16 RBM 3 500 Q 17 RE 0 217 Q 18 RC 0 196 Q 190 XTB 0 000 20 1 EG 1 110 eV 0 652 a r Note 1 s0 fos 0 000 0 vws 750 0 VJS 0 000 1 These parameters have not been extracted the default values are shown 1995 Aug 31 m Cee MBC964 L3 m QLe 50 QLe 50 QLeg e f QLe EV f fe fo scaling frequency 100 MHz Fig 6 Package equivalent circuit SOT143 List of components see Fig 6 DESIGNATION VALUE 84 17 UNIT fF fF fF nH nH nH Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10 BFG10 X Test circuit information R2 Vbias R1 T1 C14 C15 L10 C16 L9 T C11 C10 L ia DUT LA 509 i 509 input I A il II output c1 L1 T L3 el L5 c9 C2 C3 C6 C7 C4 C5 C8 MLC822 Fig 7 Common emitter test circuit for class AB operation at 1 9 GHz 1995 Aug 31 6 Philips Semiconductors NPN 2 GHz RF power transistor List of components used in test circuit see Fig 7 Product specification BFG10 BFG10 X COMPONENT C1 C9 C10 C11 DESCRIPTION mult
3. device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1995 Aug 31 10
4. function of Fig 2 Power derating curve collector base voltage typical values 1995 Aug 31 Philips Semiconductors NPN 2 GHz RF power transistor APPLICATION INFORMATION RF performance at Tamb 25 C in a common emitter test circuit see Fig 7 Product specification BFG10 BFG10 X Ruggedness in class AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR 8 1 through all phases at rated output power under pulsed conditions up to a supply voltage of 7 V f 1 9 GHz and a duty cycle of 1 8 MLC820 10 100 Gp ie dB No 8 80 G 6 p 60 4 40 2 20 0 0 0 100 200 300 400 500 P mW Pulsed class AB operation Voce 3 6 V Vee 0 65 V f 1 9 GHz duty cycle lt 1 8 Circuit optimized for PL 200 mW Fig 4 Power gain and efficiency as functions of load power typical values 1995 Aug 31 MLC821 300 200 Pp mW Pulsed class AB operation Voce 3 6 V Vee 0 65 V f 1 9 GHz duty cycle lt 1 8 Circuit optimized for PL 200 mW Fig 5 Load power as a function of drive power typical values Philips Semiconductors NPN 2 GHz RF power transistor SPICE parameters for the BFG10 crystal Prod uct specification BFG10 BFG10 X SEQUENCE No
5. O 0 BFG10Q 00 DISCRETE SEMICONDUCTORS DATA SHEET BFG10 BFG10 X NPN 2 GHz RF power transistor Product specification 1995 Aug 31 Supersedes data of 1995 Mar 07 File under Discrete Semiconductors SC 14 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10 BFG10 X FEATURES e High power gain e High efficiency e Small size discrete power amplifier e 1 9 GHz operating area e Gold metallization ensures excellent reliability APPLICATIONS e Common emitter class AB operation in hand held radio equipment at 1 9 GHz DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic 4 pin dual emitter SOT143 package QUICK REFERENCE DATA PINNING PIN DESCRIPTION BFG10 see Fig 1 1 collector 3 emitter BFG10 X see Fig 1 Top view collector 2 emitter 4 emitter MSB014 MARKING TYPE NUMBER BFG10 BFG10 X N71 RF performance at Tamb 25 C in a common emitter test circuit see Fig 7 MODE OF OPERATION Pulsed class AB duty cycle lt 1 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER collector base voltage CONDITIONS MIN MAX collector emitter voltage emitter base voltage open emitter open base collector current DC average collector current open collector
6. ilayer ceramic chip capacitor note 1 C2 C3 C4 C5 C6 C7 multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 1 C14 C15 C16 electrolytic capacitor multilayer ceramic chip capacitor note 1 2222 031 34471 stripline note 2 stripline note 2 stripline note 2 length 28 5 mm width 0 93 mm length 3 1 mm width 0 93 mm stripline note 2 stripline note 2 length 3 3 mm width 0 93 mm length 16 3 mm width 0 93 mm stripline note 2 length 10 mm width 0 93 mm stripline note 2 stripline note 2 length 4 4 mm width 0 4 mm length 19 3 mm width 0 93 mm L10 stripline note 2 micro choke length 19 7 mm width 0 4 mm T BD228 20 Q 0 4 W 2322 157 10209 Notes 1 1 R1 metal film resistor R2 metal film resistor 530 Q 0 4 W American Technical Ceramics ATC capacitor type 100A or other capacitor of the same quality 2322 157 15301 2 The striplines are on a 1 2 inch double copper clad printed circuit board with PTFE fibre glass dielectric e 6 995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10 BFG10 X O fe fe fe fe 0 60 0 0 fe o 0 0 fe o ONONONONONONONO O Oo o 000000000 e eooo ooe ooon t o000000000000 Base Collector lt 70 gt si or o Ti R1 o o L10 o C12 C13 L9 cal Ea ee S e C11 0P m
7. j 0 Vg C16 L8 L7 z fe o qq C10 C3 C4 cs L6 oo0o000000 0 C6 o000000000 ong A olo o o ojo o ooo Ojo XE co C1 L1 o pronono anono Base L2 L3 L4 C7 C8 Collector MLC823 Dimensions in mm The components are situated on one side of the copper clad PTFE microfibre glass board the other side is not etched and serves as a ground plane Earth connections from the component side to the ground plane are made by through metallization Fig 8 Printed circuit board and component lay out for common emitter test circuit in Fig 7 1995 Aug 31 8 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10 BFG10 X PACKAGE OUTLINE MBC845 TOP VIEW Dimensions in mm Fig 9 SOT143 1995 Aug 31 9 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10 BFG10 X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the
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PHILIPS BFG10; BFG10/X handbook