SIEMENS BFQ 72 handbook
Contents
1. 0 58 157 2 21 46 0 110 44 0 29 59 2 0 0 60 152 2 00 41 0 119 42 0 28 64 2 5 0 62 141 1 64 28 0 141 39 0 28 78 3 0 0 65 131 1 39 17 0 162 35 0 28 95 S11 S22 f f S12 Sa f f Ic 10 mA Vc 8 V Zo 50 Q Ic 10 mA Vc 8 V Zo 50 Q j50 j25 100 EHT07646 EHT07647 SIEMENS ere Common Emitter S Parameters continued f Au S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 25 M Vor 8 V Zo 50 Q 0 1 0 55 90 32 99 132 0 017 56 0 71 35 0 2 0 53 131 20 17 110 0 024 50 0 46 44 0 3 0 52 150 13 96 99 0 030 50 0 36 45 0 4 0 54 160 10 71 92 0 035 53 0 30 44 0 6 0 54 172 7 17 83 0 046 56 0 26 43 0 8 0 55 179 5 38 75 0 057 57 0 24 43 1 0 0 56 172 4 29 69 0 067 56 0 23 45 1 2 0 56 167 3 62 63 0 078 55 0 22 47 1 5 0 57 159 2 91 54 0 094 53 0 22 51 1 8 0 59 153 2 42 47 0 109 50 0 22 59 2 0 0 61 149 2 18 42 0 119 48 0 21 65 2 5 0 62 139 1 78 30 0 142 44 0 21 80 3 0 0 66 129 1 51 18 0 165 39 0 22 98 S11 S22 f f S12 Sa f f Ic 25 M Ver 8 V Zus 50 Q Ic 25 M Vc 8 V Zo 50 Q EHT07648 EHT07649 SIEMENS BRANE Common Emitter S Parameters continued f Au S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 40 mA Vce 8 V Zo 50 2 0 1 0 51 108 35 70 126 0 016 52. 12 5 lc 25 mA V 8 V f 1 GHz Zo 50 Q Linear output voltage Va Voz 240 mV two tone intermodulation test Ic 25 mA Vce 8 V dm 60 dB f 806 MHz f 810 MHz Zs Z1 500Q Third order intercept point IPs 30 5 dBm Ic 25 M Vce 8 V f 800 MHz SIEMENS SI Total power dissipation Pio f Ta Ts Transition frequency fr f Ic Package mounted on alumina V 5 V f 200 MHz 400 BFQ 72 EHT07627 6 BFQ 72 EHT07628 P f GHz tot mW T 5 300 4 Ts 200 3 A 2 100 1 0 0 0 100 C 200 0 10 20 30 40 mA 50 1 Collector base capacitance Ceb f Vcs Vee Vbe 0 f 1 MHz 1 5 BFQ 72 EHT07629 Cob i 1 0 0 5 der 0 0 10 V 20 SIEMENS BFQ 72 Common Emitter Noise Parameters f F min Gp F min I opt RN N F50Q Gp Fso0Q GHz dB dB MAG ANG dB dB Ic 2 M V 8 V Zo 50 Q 0 01 1 0 Zs 150 Q 1 6 Ic 10 mA Vc 8 V Zo 50 Q 0 01 1 5 Zs 90 Q 1 7 0 8 2 3 14 7 0 26 99 5 16 5 0 31 2 45 14 Noise
3. figure F f Zs V 8 V f 10 MHz 4 BFQ 72 EHTO7630 Et uk 14 40mA 20 mA OmA 10mA 2 SM 2mA 1 0 0 100 200 Q 300 Z SIEMENS BFQ 72 Circles of constant noise figure F f Zs Noise figure F f Ic in Zs plane Jc 10 mA Vce 8 V Power gain G f Ic f 800 MHz V 8 V f 800 MHZ Zon G 750 10 BFQ 72 EHT07632 20 F dB dB 6 8 Zsopt G J15 R 509 6 10 4 F R 500 5 2 Zsopt j25 j100 x 0 0 Jo Gen 0 10 20 30 mA 40 SIEMENS BFQ 72 Common Emitter Power Gain Power gain Gms S2te 2 f Ic Power gain Gma Gms S2te 2 f Ic V 8 V f 200 MHz Zo 50 Q V 8 V f 500 MHz Zo 50 82 30 BFQ 72 ERT07633 w 30 BFQ 72 EHT07634 ms Cms 2 Ging IS 24el 5 dB ZET I 5 ISztel dB ES SH Crna 20 20 U a nu nn Ef 10 10 _ Szte AMS 40 ele lk S12e S12e 0 0 0 10 20 30 40 mA 50 0 10 20 30 40 mA 50 le Power gain Gma S21e f Ic Power gain Gma S21e 2 f Ic V 8 V f 800 MHz Zo 50 Q
4. 7 0 64 37 0 2 0 52 144 20 53 105 0 021 52 0 41 42 0 3 0 53 159 13 96 96 0 027 55 0 32 41 0 4 0 54 167 10 64 90 0 032 57 0 28 39 0 6 0 55 177 7 10 81 0 043 60 0 25 38 0 8 0 56 176 5 32 74 0 054 60 0 24 39 1 0 0 57 170 4 24 68 0 066 59 0 23 41 1 2 0 58 165 3 57 63 0 076 58 0 22 44 1 5 0 59 157 2 87 54 0 092 56 0 22 49 1 8 0 60 152 2 39 46 0 107 52 0 22 57 2 0 0 62 148 2 16 42 0 116 51 0 21 63 2 5 0 64 138 1 77 29 0 140 46 0 21 79 3 0 0 67 128 1 50 18 0 163 41 0 22 98 S11 S22 f f S12 Sa f f Ic 40 mA Ve 8 V Zo 50 Q Ic 40 mA Vc 8 V Zo 50 Q 180 EHT07650 EHT07651
5. 76 0 064 50 0 21 59 1 0 0 58 174 3 89 69 0 075 50 0 19 60 1 2 0 59 167 3 28 63 0 086 50 0 18 63 1 5 0 59 159 2 64 54 0 102 48 0 17 67 1 8 0 61 153 2 20 46 0 119 46 0 17 75 2 0 0 63 149 1 99 41 0 128 44 0 17 82 2 5 0 64 138 1 63 28 0 153 40 0 17 100 3 0 0 67 128 1 38 16 0 177 34 0 19 119 S11 S22 f f S12 S1 f f Ic 15 MA Ve 5 V Zus 50 Q Ic 15 MA Vc 5 V Zo 50 Q EHT07640 EHTO7841 SIEMENS BRAE Common Emitter S Parameters continued f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 25 mA VcE 5 V Zo 5002 0 1 0 54 99 31 95 130 0 018 57 0 66 41 0 2 0 55 137 19 18 108 0 027 48 0 42 55 0 3 0 55 154 13 20 98 0 032 49 0 30 59 0 4 0 57 164 10 09 91 0 037 52 0 24 60 0 6 0 57 176 6 76 82 0 049 55 0 19 60 0 8 0 58 176 5 06 74 0 061 56 0 17 61 1 0 0 59 170 4 04 68 0 072 55 0 15 63 1 2 0 60 165 3 40 62 0 084 55 0 14 66 1 5 0 60 157 2 74 54 0 101 52 0 14 70 1 8 0 61 151 2 28 46 0 118 49 0 14 79 2 0 0 63 147 2 06 41 0 127 47 0 14 87 2 5 0 65 137 1 68 29 0 153 42 0 14 106 3 0 0 68 127 1 42 17 0 177 36 0 17 126 S11 S22 f f S12 Sx f f Ic 25 mA V 5 V Zo 50 Q Ic 25 mA V 5 V Zo 50 Q 0 j50 90 EHTO7642 EHTO7643 SIEMENS BFQ 72 Common Emitt
6. OO BFQZI UU SIEMENS NPN Silicon RF Transistor BFQ 72 e Forlow distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA e Hermetically sealed ceramic package e HiRel Mil screening available gt e CECC type available CECC 50002 2693 5 1 ESD Electrostatic discharge sensitive device observe handling precautions Type Marking Ordering Code Pin Configuration Package tape and reel 1 2 3 4 BFQ 72 72 Q62702 F776 B E C E Cerec X Maximum Ratings Parameter Symbol Values Unit Collector emitter voltage Vceo 15 V Collector emitter voltage Vee 0 Moes 20 Collector base voltage Voen 20 Emitter base voltage VEBO 2 5 Collector current Ic 50 mA Base current Is 10 Total power dissipation Ts lt 112 CH Prot 350 mW Junction temperature Ti 175 c Ambient temperature range TA 65 175 Storage temperature range Ta 65 175 Thermal Resistance Junction ambient Rin Ja lt 260 K W Junction soldering point Rinus lt 180 1 For detailed dimensions see chapter Package Outlines 2 Package mounted on alumina 15 mm x 16 7 mm x 0 7 mm 3 Tsis measured on the collector lead at the soldering point to the pcb SIEMENS BFQ 72 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit min typ max DC Characteri
7. V 8 V f 1 5 GHz Z0 50 Q BFQ 72 EHT07635 BFQ 72 EHT07636 Gy 20 Ema 20 Gol 5 Sad dB dB IS zrel Gma EE 10 10 Ek 77771 EST k k 1 Geck k k 1 S 426 5128 0 0 0 10 20 30 40 mA 50 0 10 20 30 40 mA 50 SIEMENS BFQ 72 Power gain Gma Gms S21e 2 f f Power gain Gma Gms S2te 2 f f Ic 10 M Vc 8 V Zo 50 Q Ic 25 M Voe 8 V Zo 50 Q Con 34 BFQ 72 EHTO7637 e 34 BFQ 72 EHT07638 Guns Gel 30 i Gms dB 20 ISz el Gas Ea 5 5 Be 21e E 21e A S12e S12e Gg 521 2 Ge 521 2 le fy k4 1 LAY G k 1 Sa EE 4 4 0 1 0 2 0 5 GHz 2 0 1 0 2 0 5 GHz 2 gt f gt f Power gain Gma Gms Szte f f Ic 40 mA Ve 8 V Zo 50 Q BFQ 72 EHT07639 SIEMENS ann Common Emitter S Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 15 MA Vce 5 V Zo 500 0 1 0 62 78 26 97 137 0 023 59 0 76 34 0 2 0 57 121 17 54 114 0 032 47 0 51 50 0 3 0 56 142 12 39 102 0 039 44 0 38 55 0 4 0 57 155 9 59 94 0 043 45 0 31 56 0 6 0 57 169 6 47 84 0 053 48 0 24 57 0 8 0 58 179 4 86
8. er S Parameters continued f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 50 mA Vc 5 V Zo 50 Q 0 1 0 51 126 34 20 121 0 014 54 0 55 46 0 2 0 55 154 18 99 103 0 021 53 0 33 52 0 3 0 55 166 12 81 94 0 026 57 0 25 52 0 4 0 58 173 9 72 88 0 032 59 0 21 51 0 6 0 59 178 6 47 80 0 045 62 0 18 50 0 8 0 60 172 4 84 73 0 057 61 0 17 52 1 0 0 61 167 3 86 67 0 069 60 0 16 55 1 2 0 62 162 3 25 62 0 080 59 0 15 59 1 5 0 62 155 2 62 53 0 097 56 0 15 65 1 8 0 64 149 2 18 45 0 114 53 0 15 74 2 0 0 66 145 1 97 41 0 123 51 0 15 83 2 5 0 67 136 1 61 29 0 149 46 0 15 104 3 0 0 70 126 1 37 18 0 174 40 0 17 125 S11 S22 f f S12 Sa f f Ic 50 mA Vc 5 V Zo 50 Q j25 j25 EHT07644 Ic 50 mA Vc 5 V Zo 50 Q EHT07645 SIEMENS BRANE Common Emitter S Parameters continued f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Ic 10 mA Vc 8 V Zo 50 Q 0 1 0 69 59 22 59 145 0 023 63 0 85 24 0 2 0 61 100 16 18 121 0 036 49 0 64 37 0 3 0 57 124 11 90 108 0 042 44 0 51 41 0 4 0 56 140 9 39 99 0 046 43 0 43 43 0 6 0 55 159 6 42 87 0 055 44 0 36 43 0 8 0 55 171 4 86 78 0 064 45 0 33 44 1 0 0 56 179 3 90 71 0 073 46 0 31 46 1 2 0 56 173 3 29 65 0 082 46 0 30 48 1 5 0 57 164 2 66 55 0 096 45 0 29 52 1 8
9. stics Collector emitter breakdown voltage Vieryceo 15 Ic 1 mA Js 0 Collector emitter cutoff current Ices 10 Vce 20 V Vee 0 Collector base cutoff current Icso 50 Vcs 10 V e 0 nA Emitter base cutoff current TEBo 10 Ves 2 V lc 0 uA DC current gain hre lc 25 mA Voe 5 V 40 90 200 Ic 50 mA Voce 5 V 40 Collector emitter saturation voltage VcEsat 0 15 10 4 Ic 50 mA Is 5 mA Base emitter voltage VBE 0 78 lc 25 mA Ve 5V SIEMENS BFO 72 Electrical Characteristics at Ta 25 C unless otherwise specified Parameter Symbol Values Unit min typ max AC Characteristics Transition frequency fi GHz Ic 25 mA V 5 V f 200 MHz 5 1 Ic 50 mA V 5 V f 200 MHz 4 7 Collector base capacitance Cob 0 55 0 7 pF Vcs 10 V Vee vee 0 f 1 MHz Collector emitter capacitance Coe 0 4 Vce 10 V Vee vee 0 f 1 MHz Input capacitance Cibo 2 1 Ves 0 5 V Ic ii 0 f 1 MHz Output capacitance Cobs 0 95 1 5 Vce 10 V Vee vee 0 f 1 MHz Noise figure F dB lc 10 mA V 8 V f 10 MHz Zs 75 Q 1 7 lc 10 mA V 8 V f 800 MHz Zs 50 Q 2 5 Power gain Gpe 18 lc 25 mA V 8 V f 800 MHz Zs ZSopt ZLopt Transducer gain Sel
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SIEMENS BFQ 72 handbook