Philips Semiconductors BT136X series D handbook
Contents
1. 100 150 Tj C Fig 12 Typical critical rate of rise of off state voltage dVp adt versus junction temperature T Rev 1 400 Philips Semiconductors Product specification Triacs BT136X series D logic level MECHANICAL DATA Dimensions in mm Net Mass 29 Recesses 2x MIN 28 g2 4 0 8 max depth 15 8 19 seating max max plane 3 max l not tinned Fig 13 SOT186A The seating plane is electrically isolated from all terminals Notes 1 Refer to mounting instructions for F pack envelopes 2 Epoxy meets UL94 VO at 1 8 June 2001 5 Rev 1 400 Philips Semiconductors Product specification Triacs BT136X series D logic level DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in ordere to improve the design and supply the best possible product Product data Production This data sheet2. A Fig 1 Maximum on state dissipation Pi versus rms on state current lrems Where a conduction angle ITSM A E dly ot limit G quadran 1 fous 100us ims 10ms 100ms T s Fig 2 Maximum permissible non repetitive peak on state current I sy versus pulse width t for sinusoidal currents t lt 20ms ITSM A I III ATSM e T time l Tj initial 25 C max 10 100 1000 Number of cycles at 50Hz Fig 3 Maximum permissible non repetitive peak on state current lrsm versus number of cycles for sinusoidal currents f 50 Hz June 2001 Product specification BT136X series D O50 0 50 100 Ths C Fig 4 Maximum permissible rms current lrems versus heatsink temperature T 8 01 0 1 1 10 surge duration s Fig 5 Maximum permissible repetitive rms on state current lrpys Versus surge duration for sinusoidal currents f 50 Hz T lt 92 C VGT Tj VGT 25 C 0 100 Ke Fi
3. 0 O BT136X is DO D 0 Philips Semiconductors Product specification Triacs BT136X series D logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated sensitive gate triacs in a full SYMBOL PARAMETER pack plastic envelope intended for use M in general purpose bidirectional BT136X switching and phase control Vorm Repetitive peak off state voltages applications These devices are intended lems RMS on state current to be interfaced directly to lism Non repetitive peak on state current microcontrollers logic integrated circuits and other low power gate trigger circuits PINNING SOT186A PIN CONFIGURATION SYMBOL DESCRIPTION main terminal 1 main terminal 2 gate isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Vorm Repetitive peak off state voltages lems RMS on state current full sine wave Ths lt 92 C lism Non repetitive peak full sine wave T 25 C prior to on state current l t t for fusing dl dt Repetitive rate of rise of on state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature June 2001 1 Rev 1 400 Philips Semiconductors Product specification Triacs BT136X series D logic level ISOLATION LIMITING VALUE amp CHARACTERISTIC Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDIT
4. IONS MIN vP MAX UNIT Visol R M S isolation voltage from all f 50 60 Hz sinusoidal 2500 V three terminals to external waveform heatsink R H lt 65 clean and dustfree Cisol Capacitance from T2 to external f 1 MHz 10 pF heatsink THERMAL RESISTANCES CONDITIONS miN rvp MAX UNIT Rin j ns Thermal resistance full or half cycle junction to heatsink with heatsink compound 5 5 K W without heatsink compound 7 A K W Rin j a Thermal resistance in free air K W junction to ambient STATIC CHARACTERISTICS T 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS min TP MAX UNT Gate trigger current Vb 12V 1 0 1A orn PP ANADMNMNUD COMMS Latching current Vp 12 V ler 0 1 A Holding current Vb 12 V l amp r 0 1 A On state voltage 5A Gate trigger voltage Vp gt 12V 1 0 1A Vp 400 V lr 0 1 A T 125 C Off state leakage current Vp Vormmaxs 1 125 C COOA papu DYNAMIC CHARACTERISTICS T 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS J min TYP max UNIT Critical rate of rise of Vom 67 Vormimax s 1 125 C 5 V us off state voltage exponential ance ae Rek 1kQ Gate controlled turn on lm 6 A Vp Vormmax gt le 0 1 A 2 us time dl dt 5 A us June 2001 2 Rev 1 400 Philips Semiconductors Triacs logic level Ptot W Ths max C 8 3 IT RMS
5. contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not d
6. esigned for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http www semiconductors philips com June 2001 6 Rev 1 400
7. g 6 Normalised gate trigger voltage Ver T Ver 25 C versus junction temperature T Rev 1 400 Philips Semiconductors Triacs logic level IGT Tj 3 IGT 25 C 0 100 tc Fig 7 Normalised gate trigger current ler T lar 28 C versus junction temperature T 0 50 100 150 Tj C Fig 8 Normalised latching current I T 1 25 C versus junction temperature T 0 100 150 Se Fig 9 Normalised holding current I T 1 25 C versus junction temperature f June 2001 Product specification BT136X series D IT A Tj 125 Tj 25C Vo 1 27 V Rs 0 091 ohms 1 5 2 2 5 3 VT V Fig 10 Typical and maximum on state characteristic Zth j hs_ K W iwith heatsink compound i without heatsink compound j Dri unidirectional bidirecti ie x TETT Yous 0 1ms ims 1s 10s Fig 11 Transient thermal impedance Zp ns versus pulse width t dVD dt V us
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Philips Semiconductors BT136X series D handbook