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PHILIPS BT136S series E handbook

1. 10 4 max Fig 13 SOT428 centre pin connected to tab 4 57 Fig 14 SOT428 minimum pad sizes for surface mounting Notes 1 Plastic meets UL94 VO at 1 8 June 2001 Rev 1 200 Philips Semiconductors Product specification Triacs BT136S series E sensitive gate DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress abov
2. 1 65 0 Philips Semiconductors Product specification Triacs BT136S series E sensitive gate GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated sensitive gate triacs in a SYMBOL PARAMETER plastic envelope suitable for surface r mounting intended for use in general BT136S purpose bidirectional switching and Repetitive peak off state phase control applications where voltages high sensitivity is required in all four RMS on state current quadrants Non repetitive peak on state current PINNING SOT428 PIN CONFIGURATION SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Vorm Repetitive peak off state voltages linus RMS on state current full sine wave T lt 107 C Ira Non repetitive peak full sine wave T 25 C prior to on state current t for fusing Repetitive rate of rise of on state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended off state voltages up to 800V may be applied without damage but the triac may switch to the on state The rate of rise of current should not exceed 3 A us June 2001 1 Rev 1 200 Philips Semiconductors Product specification Triacs BT136S serie
3. 1 25 C versus junction temperature 7 0 100 150 Fig 9 Normalised holding current I T l 25 C versus junction temperature June 2001 Product specification BT136S series E IT A Tj 125 25 Vo 1 27 V Rs 0 091 ohms 1 5 2 2 5 3 VT V Fig 10 Typical and maximum on state characteristic Zth j mb 10 ie B TUNE TI Tous 0 1ms 1ms 15 10s Fig 11 Transient thermal impedance Zp jmp versus pulse width t dVD dt V us 100 150 Tj C Fig 12 Typical critical rate of rise of off state voltage dVp at versus junction temperature Rev 1 200 Philips Semiconductors Triacs sensitive gate MECHANICAL DATA Dimensions in mm Net Mass 1 1 g 6 73 max Product specification BT136S series E seating plane 2 38 max WeSC cc 0 93 max EE 2 285 x2 MOUNTING INSTRUCTIONS Dimensions in mm 0 8 max x2
4. 2 Maximum permissible non repetitive peak on state current l a versus pulse width 1 for sinusoidal currents t lt 20ms ITSM A UL Tel 8M T time Tj initial 25 C 10 100 1000 Number of cycles at 50Hz Fig 3 Maximum permissible non repetitive peak on state current versus number of cycles for sinusoidal currents f 50 Hz June 2001 Product specification BT136S series E 0 50 0 100 50 Tmb C Fig 4 Maximum permissible rms current lys versus mounting base temperature 8 01 0 1 1 10 surge duration s Fig 5 Maximum permissible repetitive rms on state current lrpys versus surge duration for sinusoidal currents f 50 Hz T lt 107 C VGT Tj VGT 25 C 0 100 Tic Fig 6 Normalised gate trigger voltage Var Tj Va 25 C versus junction temperature T Rev 1 200 Philips Semiconductors Triacs sensitive gate IGT Tj 3 IGT 25 C T c Fig 7 Normalised gate trigger current ler T la 25 versus junction temperature 0 50 100 150 Tj C Fig 8 Normalised latching current I
5. e one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 2 Please consult the most recently issued datasheet before ini
6. s E sensitive gate THERMAL RESISTANCES syweot Panaweten commons Tv wax on Rin Thermal resistance full cycle junction to mounting base half cycle Rin ia Thermal resistance pcb FR4 mounted footprint as in Fig 14 junction to ambient STATIC CHARACTERISTICS T 25 C unless otherwise stated oou Latching current Vp 12 V ler 0 1 A Holding current Vb 12 V ler 0 1 A On state voltage L 5A Gate trigger voltage Vb 12 1 20 1A V 400 V lr 0 1 125 Off state leakage current V5 Vormmaxys T 125 je COONAN ANABRNMWOMUCO DYNAMIC CHARACTERISTICS T 25 C unless otherwise stated Critical rate of rise of Vom 67 Vormmaxys T 125 C off state voltage exponential aie gate open circuit Gate controlled turn on ly 6 Vp Vormmax gt la 0 1 A time dl dt 5 A us June 2001 2 Rev 1 200 Philips Semiconductors Triacs sensitive gate Tmb max C 125 5 IT RMS A Fig 1 Maximum on state dissipation Pi versus rms on state current lrems Where a conduction angle ITSM A di dt limit G quadran 1 fous 100us ims 10ms 100ms T s Fig
7. tiating or completing a design 3 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http www semiconductors philips com June 2001 6 Rev 1 200

PHILIPS BT136S series E handbook

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