PHILIPS BT134 series E datasheet
Contents
1. 1 Lead dimensions within this zone uncontrolled Fig 13 SOT82 pin 2 connected to mounting base Notes 1 Refer to mounting instructions for SOT82 envelopes 2 Epoxy meets UL94 VO at 1 8 August 1997 5 Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series E sensitive gate DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1997 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of a2. H Pous 100us ims 10ms 100ms T s Fig 2 Maximum permissible non repetitive peak on state current I cy versus pulse width t for sinusoidal currents t lt 20ms ITSM A IILI ATSM e T time l Tj initial 25 C max 10 100 1000 Number of cycles at 50Hz Fig 3 Maximum permissible non repetitive peak on state current lsm versus number of cycles for sinusoidal currents f 50 Hz August 1997 Product specification BT134 series E 0 50 0 100 50 Tmb C Fig 4 Maximum permissible rms current rans versus mounting base temperature Tmp 8 01 0 1 1 10 surge duration s Fig 5 Maximum permissible repetitive rms on state current lrpys Versus surge duration for sinusoidal currents f 50 Hz Tma lt 107 C 0 100 Ke Fig 6 Normalised gate trigger voltage Verl T Ver 25 C versus junction temperature T Rev 1 200 Philips Semiconductors Triacs sensitive gate IGT T 3 IGT 25 C T C Fig 7 Normalised gate tri
3. O 0 BT134500E0 O O Philips Semiconductors Product specification Triacs sensitive gate BT134 series E GENERAL DESCRIPTION Glass passivated sensitive gate triacs in a plastic envelope intended for use in general purpose bidirectional switching and phase control applications where high sensitivity is required in all four quadrants PINNING SOT82 DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 LIMITING VALUES QUICK REFERENCE DATA SYMBOL PARAMETER MAX MAX MAX UNIT BT134 500E 600E 800E Repetitive peak off state voltages Lees RMS on state current ltsm Non repetitive peak on state current Vorm PIN CONFIGURATION SYMBOL Limiting values in accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNT 500 600 800 500 600 800 4 Repetitive peak off state voltages Irvams RMS on state current lism Non repetitive peak on state current Vorm full sine wave Tm lt 107 C full sine wave T 25 C prior to l t t for fusing dl dt Repetitive rate of rise of on state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended off state voltages up to 800V may be applied without damage but the triac may switch to the on
4. gger current Ier T WV Igr 25 C versus junction temperature T 0 50 100 150 Tj C Fig 8 Normalised latching current I T 1 25 C versus junction temperature T 0 100 150 ae Fig 9 Normalised holding current I T 1 25 C versus junction temperature T August 1997 Product specification BT134 series E IT A T 125 Tj 25 Vo 1 27 V Rs 0 091 ohms 1 5 2 2 5 3 VT V Fig 10 Typical and maximum on state characteristic 19 Zhimb K W a COE Ce 10us 0 1ms ims i 1s 10s Fig 11 Transient thermal impedance Zn jmb versus pulse width t dVD dt V us 100 150 Tj C Fig 12 Typical critical rate of rise of off state voltage dVp dt versus junction temperature T Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series E sensitive gate MECHANICAL DATA Dimensions in mm Net Mass 0 8 g mounting base
5. ny quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale August 1997 6 Rev 1 200
6. state The rate of rise of current should not exceed 3 A us August 1997 1 Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series E sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN T P MAX UNIT Rin j mb Thermal resistance full cycle junction to mounting base half cycle Rin j a Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS T 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS J MIN TYP max UNIT Gate trigger current Vp 12V 1 0 1A ETSEN Ogi Latching current Vp 12 V ler 0 1 A Holding current Vb 12 V ler 0 1 A On state voltage L 5A Gate trigger voltage Vo gt 12V 1 0 1A Vp 400 V lr 0 1 A T 125 C Off state leakage current Vp Vormmaxys T 125 sC SSOOSANANAW ANABRNMWOMUCO DYNAMIC CHARACTERISTICS T 25 C unless otherwise stated Critical rate of rise of Vom 67 Vormmaxys T 125 C off state voltage exponential aie a gate open circuit Gate controlled turn on lm 6 A Vp Vormmax gt le 0 1 A time dl dt 5 A us August 1997 2 Rev 1 200 Philips Semiconductors Triacs sensitive gate Tmb max C 0 2 3 IT RMS A Fig 1 Maximum on state dissipation Pi versus rms on state current lrrus where a conduction angle F
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PHILIPS BT134 series E datasheet bt134-600e bpt13t-e