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PHILIPS BT134 series D handbook(1)

1. 1 Lead dimensions within this zone uncontrolled Fig 13 SOT82 pin 2 connected to mounting base Notes 1 Refer to mounting instructions for SOT82 envelopes 2 Epoxy meets UL94 VO at 1 8 October 1997 5 Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series D logic level DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification O Philips Electronics N V 1997 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does
2. 7 Normalised gate trigger current lar T la 25 C versus junction temperature T 0 50 100 150 Tj C Fig 8 Normalised latching current I T 1 25 C versus junction temperature T 0 100 150 m Fig 9 Normalised holding current I T l 25 C versus junction temperature T October 1997 Product specification BT134 series D IT A T 125 j Ti 25 Vo 1 27 V Rs 0 091 ohms 1 5 2 2 5 3 VT V Fig 10 Typical and maximum on state characteristic 19 Zih mb KW T THE TIE 10us 0 1ms 1ms 1s 10s Fig 11 Transient thermal impedance Zn jmb Versus pulse width t dVD dt V us 100 150 Tj C Fig 12 Typical critical rate of rise of off state voltage dVp dt versus junction temperature T Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series D logic level MECHANICAL DATA Dimensions in mm Net Mass 0 8 g mounting base
3. 0 0 BT134 series D Philips Semiconductors Product specification Triacs BT134 series D logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated sensitive gate SYMBOL PARAMETER MAX MAX UNIT triacs in a plastic envelope intended OS for use in general purpose BT134 500D 600D bidirectional switching and phase Vorm Repetitive peak off state voltages control applications These devices lems RMS on state current are intended to be interfaced directly lism Non repetitive peak on state current to microcontrollers logic integrated circuits and other low power gate trigger circuits PINNING SOT82 PIN CONFIGURATION SYMBOL DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Vorm Repetitive peak off state voltages linus RMS on state current full sine wave T lt 107 C Ira Non repetitive peak full sine wave T 25 C prior to on state current t for fusing Repetitive rate of rise of on state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended off state voltages up to 800V may be applied without damage but the triac may switch to the on state The rate of rise of current should not exceed 3 A u
4. F H Pous 100us ims 10ms 100ms T s Fig 2 Maximum permissible non repetitive peak on state current l a versus pulse width t for sinusoidal currents t lt 20ms ITSM A UL tT Tel 8M T time l Tj initial 25 C max 10 100 1000 Number of cycles at 50Hz Fig 3 Maximum permissible non repetitive peak on state current lsm versus number of cycles for sinusoidal currents f 50 Hz October 1997 Product specification BT134 series D 0 50 0 100 50 Tmb C Fig 4 Maximum permissible rms current lys versus mounting base temperature Tmp 8 01 0 1 1 10 surge duration s Fig 5 Maximum permissible repetitive rms on state current lrpys versus surge duration for sinusoidal currents f 50 Hz T 107 C 0 100 Tic Fig 6 Normalised gate trigger voltage Var Tj Var 25 C versus junction temperature T Rev 1 200 Philips Semiconductors Triacs logic level IGT Tj 3 IGT 25 C 0 Fig
5. not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale October 1997 6 Rev 1 200
6. s October 1997 1 Rev 1 200 Philips Semiconductors Product specification Triacs BT134 series D logic level THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS WMN T P wax UNIT Rin j mb Thermal resistance full cycle junction to mounting base half cycle Rin ia Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS T 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MN TYP max UNIT Gate trigger current Vp 12V 1 0 1A Onn Pp ooo ANADNNMUD COMMS aoao o Latching current Vp 12 V ler 0 1 A Holding current Vb 12 V ler 0 1 A On state voltage L 5A Gate trigger voltage Vb 2 12V 20 1A Vp 400 V 1 0 1 A T 125 C Off state leakage current V5 Vormmaxys T 125 je Ocoo pm e DYNAMIC CHARACTERISTICS T 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MN TP wax unir Critical rate of rise of Vom 67 Vormmaxys T 125 C 5 V us off state voltage exponential waveform Rex 1 KQ Gate controlled turn on ly 6 A Vp Vbrmmax la 0 1 A 2 us time di dt 5 A us October 1997 2 Rev 1 200 Philips Semiconductors Triacs logic level Tmb max C 0 2 3 IT RMS A Fig 1 Maximum on state dissipation Pi versus rms on state current lrrus where o conduction angle

PHILIPS BT134 series D handbook(1)

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