National LMV1012 Analog Series handbook
Contents
1. Li 100 1k 10k FREQUENCY Hz 100k 20058716 www national com seules Dojeuy ZLOLAWT LMV1012 Analog Series Application Section HIGH GAIN The LMV1012 series provides outstanding gain versus the JFET and still maintains the same ease of implementation with improved gain linearity and temperature stability A high gain eliminates the need for extra external components BUILT IN GAIN The LMV1012 is offered in 0 3 mm height space saving small 4 pin micro SMD packages in order to fit inside the different size ECM canisters of a microphone The LMV1012 is placed on the PCB inside the microphone The bottom side of the PCB usually shows a bull s eye pattern where the outer ring which is shorted to the metal can should be connected to the ground The center dot on the PCB is connected to the Vpp through a resistor This phantom biasing allows both supply voltage and output sig nal on one connection DIAPHRAGM AIRGAP xxi zd BACKPLATE CONNECTOR LMV1012 20058702 FIGURE 1 Built in Gain A WEIGHTED FILTER The human ear has a frequency range from 20 Hz to about 20 kHz Within this range the sensitivity of the human ear is not equal for each frequency To approach the hearing re sponse weighting filters are introduced One of those filters is the A weighted filter The A weighted filter is usually used in signal to noise ratio measurements where sound is compared to device noise2. 3 RECOMMEND NON SOLDER MASK DEFINED LANDING PAD 4 PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION 5 XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH X2 IS PACKAGE LENGTH AND X3 IS PACKAGE HEIGHT 6 REFERENCE JEDEC REGISTRATION MO 211 VARIATION CA 4 Bump ULTRA Thin micro SMD NS Package Number UPA0O4GKA X 0 93 mm X 1 006 mm X 0 400 mm www national com 14 Physical Dimensions inches millimeters unless otherwise noted Continued PKG SYMM p PKG SYMM G r ENS 08 5 e Lie aa DIMENSIONS ARE IN MILLIMETERS AX 20710 ee i ead LAND PATTERN RECOMMENDATION X3 5 C 0 125 TOP SIDE COATING 0 050 p BUMP A BUMP A1 CORNER s SILICON 0 11 X AX oio NOTE UNLESS OTHERWISE SPECIFIED 1 EPOXY COATING 2 63Sn 37Pb EUTECTIC BUMP 3 RECOMMEND NON SOLDER MASK DEFINED LANDING PAD 4 0 0019 c laO BO 4 Rev 4 PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION PINS ARE NUMBERED COUNTERCLOCKWISE 5 XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH X2 IS PACKAGE LENGTH AND X3 IS PACKAGE HEIGHT 6 REFERENCE JEDEC REGISTRATION MO 211 VARIATION BC 4 Bump Thin micro SMD NS Package Number TPA04GKA X 0 93 mm X 1 006 mm X 0 500 mm LIFE SUPPORT POLICY NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CHIT
3. This filter improves the correlation of the measured data to the signal to noise ratio perceived by the human ear www national com dBV L LI L E 10 100 1k 10k FREQUENCY Hz 20058709 FIGURE 2 A Weighted Filter MEASURING NOISE AND SNR The overall noise of the LMV1012 is measured within the frequency band from 10 Hz to 22 kHz using an A weighted filter The input of the LMV1012 is connected to ground with a 5 pF capacitor as in Figure 3 Special precautions in the internal structure of the LMV1012 have been taken to reduce the noise on the output A WEIGHTED FILTER ID FIGURE 3 Noise Measurement Setup 20058710 The signal to noise ratio SNR is measured with a 1 kHz input signal of 18 mVpp using an A weighted filter This represents a sound pressure level of 94 dB SPL No input capacitor is connected for the measurement SOUND PRESSURE LEVEL The volume of sound applied to a microphone is usually stated as a pressure level referred to the threshold of hear ing of the human ear The sound pressure level SPL in decibels is defined by Sound pressure level dB 20 log Pm Po Where Pm is the measured sound pressure is the threshold of hearing 20 uPa In order to be able to calculate the resulting output voltage of the microphone for a given SPL the sound pressure in dB Application Section Continued SPL needs to be converted to the absolute sound pressure in dBPa
4. 2 uF Boldface limits apply at the temperature extremes Conditions Symbol ea Ipp Supply Current Vin GND SNR Signal to Noise Ratio f 1 kHz Vn 18 mV A Weighted ViN Max Input Signal f 2 1 kHz and THD N lt 1 Vour Output Voltage Vin GND flow Lower 3dB Roll Off Frequency Rsource 500 fHiGH en Output Noise A Weighted THD Total Harmonic Distortion f 1 kHz ViN 18 mV Upper 3dB Roll Off Frequency Rsource 502 a ae Min Typ Max Note 4 Note 5 Note 4 LMV1012 07 139 250 moe a 325 UA LMV1012 20 160 250 LMV1012 25 141 250 wwe 59 wos 9 woo 9 wos woor 79 wos 99 woo 5 mvo 29 LMV1012 07 1 65 1 90 1 54 Units MV pp LMV1012 15 1 54 HE S LMV1012 20 1 65 BE S LMV1012 25 1 65 PEL kHz LMV1012 07 DEM MODE ON M 09 woo om wos 015 8 8 9 Ces x 8 2 w Zn imput mpedanes co www national com 2 2V Electrical Characteristics Note 3 Continued Unless otherwise specified all limits guaranteed for T 25 C Vpp 2 2V Vin 18 mV 2 2 and C 22 uF Boldface limits apply at the temperature T ae Gain NM 1 kHz LMV1012 07 Rsource 902 00 LMV1012 15 14 0 16 9 13 1 17 5 dB LMV1012 20 19 5 22 0 17 4 23 3 LMV1012 25 22 5 25 0 21 4 25 7
5. 5V Electrical Characteristics Note 3 Unless otherwise specified all limits guaranteed for T 25 C Vpp 5V Vin 18 mV 2 2 and C 22 pF Boldface limits apply at the temperature extremes Symbol Units LMV1012 15 us LMV1012 20 188 260 310 woor woo a 1 01225 1 89 ViN Max Input Signal f 1 kHz and LMV1012 07 170 o 25 4 38 4 85 LMV1012 15 4 34 4 74 UE RUES LMV1012 20 4 40 4 58 4 75 Y BUE SEES LMV1012 25 4 45 4 83 ME RENE S Output Noise A Weighted LMVI012 07 M wos amp THD Total Harmonic Distortion f 1 kHz LMV1012 07 _ 042 imwe ot om lop Supply Current Vin GND SNR Signal to Noise Ratio f 1 kHz Vn 18 mV A Weighted 3 www national com seules Dojeuy ZLOLAWT 5V Electrical Characteristics Note 3 Continued Unless otherwise specified all limits guaranteed for T 25 C Vpp 5V Vin 18 mV 2 2 and C 2 2 uF Boldface limits apply at the temperature extremes o o 9 t Symbol Parameter Conditions Note 4 Note 5 Note 4 Units S ON Input Capacitance LL 5 IN E p gt 1000 Ay Gain f 1 kHz LMV1012 07 6 4 8 1 9 5 Rsource 509 5 5 10 7 LMV1012 15 14 0 15 6 16 9 13 1 17 5
6. This is the sound pressure level in decibels referred to 1 Pascal Pa The conversion is given by dBPa dB SPL 20 log 20 Pa dBPa dB SPL 94 dB Translation from absolute sound pressure level to a voltage is specified by the sensitivity of the microphone A conven tional microphone has a sensitivity of 44 dBV Pa ABSOLUTE SOUND PRESSURE dBPa SENSITIVITY dBV Pa SOUND PRESSURE dB SPL VOLTAGE dBV 20058711 FIGURE 4 dB SPL to dBV Conversion Example Busy traffic is 70 dB SPL Vout 70 94 44 68 dBV This is equivalent to 1 13 mVpp Since the LMV1012 15 has a gain of 6 15 6 dB over the JFET the output voltage of the microphone is 6 78 mVpp By implementing the LMV1012 15 the sensitivity of the micro phone is 28 4 dBV Pa 44 15 6 LOW FREQUENCY CUT OFF FILTER To reduce noise on the output of the microphone a low frequency cut off filter has been implemented This filter reduces the effect of wind and handling noise Its also helpful to reduce the proximity effect in directional microphones This effect occurs when the sound source is very close to the microphone The lower frequencies are 11 amplified which gives a bass sound This amplification can cause an overload which results in a distortion of the signal EIN CILLUM 0 10 100 1k Ok FREQUENCY Hz 100k 1M 20058712 FIGURE 5 LMV1012 15 Gain vs Frequency Over Temperature The LMV10
7. dB LMV1012 20 19 2 21 1 22 3 17 0 23 5 LMV1012 25 22 5 23 9 25 0 21 2 25 8 Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur Operating Ratings indicate conditions for which the device is intended to be functional but specific performance is not guaranteed For guaranteed specifications and the test conditions see the Electrical Characteristics Note 2 Human Body Model HBM is 1 5 KQ in series with 100 pF Note 3 Electrical Table values apply only for factory testing conditions at the temperature indicated Factory testing conditions result in very limited self heating of the device such that Tj Ta No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where Tj gt Ta Note 4 All limits are guaranteed by design or statistical analysis Note 5 Typical values represent the most likely parametric norm Note 6 The maximum power dissipation is a function of Tj max and Ta The maximum allowable power dissipation at any ambient temperature is TA 8Ja All numbers apply for packages soldered directly into a PC board www national com Connection Diagram A2 OUTPUT A1 GND 4 Bump micro SMD Top View Note Pin numbers are referenced to package marking text orientation 20058703 The actual physical placement of the package marking will vary slightly from part to part The package
8. 12 is optimized to be used in audio band appli cations By using the LMV1012 the gain response is flat within the audio band and has linearity and temperature stability Figure 5 NOISE Noise pick up by a microphone in cell phones is a well known problem A conventional JFET circuit is sensitive for noise pick up because of its high output impedance which is usually around 2 2 kQ HF noise is amongst other caused by non linear behavior The non linear behavior of the amplifier at high frequencies well above the usable bandwidth of the device causes AM demodulation of high frequency signals The AM modulation contained in such signals folds back into the audio band thereby disturbing the intended microphone signal The GSM signal of a cell phone is such an AM modulated signal The modulation frequency of 216 Hz and its harmonics can be observed in the audio band This kind of noise is called bumblebee noise HF noise caused by a GSM signal can be reduced by connecting two external capacitors to ground see Figure 6 One capacitor reduces the noise caused by the 900 MHz carrier and the other reduces the noise caused by 1800 1900 MHz www national com Salles Dojeuy ZLOLAWT LMV1012 Analog Series Application Section Continued www national com FIGURE 6 RF Noise Reduction 20058708 Physical Dimensions inches millimeters unless otherwise noted PKG 1 PKG SYMM poses DIMENSIONS ARE IN MILLIMETERS
9. DIMENSIONS IN FOR REFERENCE ONLY 0 EI 5 H i5 LAND PATTERN RECOMMENDATION X3 JY 1 BUMP 2 SYMM 1 BUMP 1 CORNER SILICON oo A o ax 0716 0 0016 B 9 10 0018 C AO B XPAOAXXX Rev B NOTE UNLESS OTHERWISE SPECIFIED 1 FOR SOLDER BUMP COMPOSITION SEE SOLDER INFORMATION IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE www national com 2 RECOMMEND NON SOLDER MASK DEFINED LANDING PAD 3 PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION 4 XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH X2 IS PACKAGE LENGTH AND X3 IS PACKAGE HEIGHT 5 REFERENCE JEDEC REGISTRATION MO 211 VARIATION CA 4 Bump Extreme Thin micro SMD NS Package Number XPAO4HLA X 0 955 mm X 1 031 mm 0 300 mm seules Dojeuy ZLOLAWT 13 www national com LMV1012 Analog Series Physical Dimensions inches millimeters unless otherwise noted Continued PKG 910 7 PKG SYMM Qo ed DIMENSIONS ARE IN MILLIMETERS 4 60 11 0 1 5 J LAND PATTERN RECOMMENDATION 0 00033 TOP SIDE COATING 0 00027 BUMP BUMP A1 CORNER SILICON UPA04XXX Rev B NOTE UNLESS OTHERWISE SPECIFIED 1 TITANIUM COATING 2 FOR SOLDER BUMP COMPOSITION SEE SOLDER INFORMATION IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE www national com
10. ICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user BANNED SUBSTANCE COMPLIANCE 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification CSP 9 111C2 and the Banned Substances and Materials of Interest Specification 5 9 11152 and contain no Banned Substances as defined in CSP 9 111S2 National Semiconductor Europe Customer Support Center Fax 49 180 530 85 86 Email europe support 9 nsc com Deutsch Tel 49 0 69 9508 6208 English Tel 44 0 870 24 0 2171 Fran ais Tel 33 0 1 41 91 8790 National Semiconductor Americas Customer Support Center Email new feedback nsc com Tel 1 800 272 9959 www national com National does not assume an
11. LY CURRENT uA 120 100 SUPPLY VOLTAGE V 20058719 Gain and Phase vs Frequency LMV1012 15 MM ES ACHT PHASE y CONTE Wi JUIN E GAIN dB 0 36 10 100 1k 10k 100k 1M FREQUENCY Hz 20058705 Typical Performance Characteristics Uniess otherwise specified Vs 2 2V 2 2 KQ C 2 2 uF single supply Ta 25 C Continued Gain and Phase vs Frequency LMV1012 20 25 300 NI Lad 250 M Ty M CI IN M e E f lha 100 D 5 10 5 100 0 200 00 10 1k 100k 1M FREQUENCY Hz 20058725 Total Harmonic Distortion vs Frequency LMV1012 07 THD N 96 10 10 Ok 100k FREQUENCY Hz 20058720 Total Harmonic Distortion vs Frequency LMV1012 20 0 6 0 5 0 4 NT 10 100k puce E THD N 96 0 1 0 0 20058726 Gain and Phase vs Frequency LMV1012 25 25 300 NT TIENI TREE i WI ER T 15 li 100 2 Z lt T B 50 5 100 0 200 10 1k Ok 100k 1M FREQUENCY Hz 20058713 Total Harmonic Distortion vs Frequency LMV1012 15 0 6 AL DO LLL EUM 10 100 20058706 Total Harmonic Distortion vs Frequency LMV1012 25 0 6 NI TU LOU D min il gt 0 4 THD N 0 1 0 0 10 100k 20058721 seules Dojeuy ZLOLAWT www national co
12. O D EMVIOUT O L National Semiconductor LMV1012 Analog Series August 2004 Pre Amplified IC s for High Gain 2 Wire Microphones General Description The LMV1012 is an audio amplifier series for small form factor electret microphones This 2 wire portfolio is designed to replace the JFET amplifier currently being used The LMV1012 series is ideally suited for applications requiring high signal integrity in the presence of ambient or RF noise such as in cellular communications The LMV1012 audio amplifiers are guaranteed to operate over a 2 2V to 5 0V supply voltage range with fixed gains of 7 8 dB 15 6 dB 20 9 dB and 23 8 dB The devices offer excellent THD gain accuracy and temperature stability as compared to a JFET microphone The LMV1012 series enables a two pin electret microphone solution which provides direct pin to pin compatibility with the existing JFET market The devices are offered in extremely thin space saving 4 bump micro SMD packages The LMV1012XP is designed for 1 0 mm canisters and thicker ECM canisters These extremely miniature packages are designed for electret con denser microphones ECM form factor Schematic Diagram DD 2 2k 2 2uF 6 i 6 J 0 0 OUTPUT e INPUT e 8 t e e i a e e e e 0 0 e 0 e i O GND 20058701 2004 National Semiconductor Corporation DS200587 Features Typical LMV1012 15 2 2V supply 2 2 kQ C 2 2 uF
13. Vin 18 mVpp unless otherwise specified m Supply voltage 2V 5V Supply current 180 LA Signal to noise ratio A weighted 60 dB Output voltage noise A weighted 89 dBV m Total harmonic distortion 0 0976 m Voltage gain LMV1012 07 7 8 dB LMV1012 15 15 6 dB LMV1012 20 20 9 dB LMV1012 25 23 8 dB B Temperature range 40 C to 85 C Offered in 4 bump micro SMD packages Applications Cellular phones m Headsets Mobile communications Automotive accessories PDAs Accessory microphone products Built In Gain Electret Microphone DIAPHRAGM AIRGAP BACKPLATE CONNECTOR LMV1012 20058702 www national com seuoudojJor y 9J41M z ures uBiH 20 5 91 peuyijdurg e4d seues 6ojeuy ZLOLAWT LMV1012 Analog Series Absolute Maximum Ratings Note 1 If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications ESD Tolerance Note 2 Human Body Model 2500V Machine Model 250V Supply Voltage Vpp GND 55V 2 2V Electrical Characteristics Note 3 Storage Temperature Range 65 C to 150 C Junction Temperature Note 6 150 C max Mounting Temperature Infrared or Convection 20 sec 235 C Operating Ratings Note 1 Supply Voltage 2V to 5V Temperature Range 40 C to 85 C Unless otherwise specified all limits guaranteed for T 25 C Vpp 2 2V Vin 18 mV 2 2 and 2
14. m LMV1012 Analog Series Total Harmonic Distortion vs Input Voltage LMV1012 07 h Il A L N THD N MET INPUT VOLTAGE 20058722 Total Harmonic Distortion vs Input Voltage LMV1012 20 THD N 96 Il I N INPUT VOLTAGE mVpp 20058727 Output Noise vs Frequency LMV1012 07 100 gU LN z I 0 130 2 s LL TT aso I pe ILL 10 100 1k 10k 100k FREQUENCY Hz 20058717 www national com Typical Performance Characteristics unless otherwise specified Vs 2 2V R 2 2 KQ C 2 2 uF single supply Ta 25 C Continued Total Harmonic Distortion vs Input Voltage LMV1012 15 THD N INPUT VOLTAGE mV pp 20058707 Total Harmonic Distortion vs Input Voltage LMV1012 25 THD N INPUT VOLTAGE mVpp 20058723 Output Noise vs Frequency LMV1012 15 100 105 110 qT 115 E gt 120 2 125 0 130 Z 10 100 1k 10k 100k FREQUENCY Hz 20058715 Typical Performance Characteristics Uniess otherwise specified Vs 2 2V 2 2 KQ C 2 2 uF single supply Ta 25 Continued Output Noise vs Frequency LMV1012 20 NOISE dBV VAZ 100 os UH ee NULL azs 430 LI ITA 135 140 145 150 10 100 1 10 100k FREQUENCY Hz 20058728 Output Noise vs Frequency LMV1012 25 NOISE dBV VAZ OG T
15. will designate the date code and will vary considerably Package marking does not correlate to device type in any way Ordering Information Package 4 Bump Extreme Thin micro SMD 0 3 mm max height lead free only 4 Bump Ultra Thin micro SMD 0 4 mm max height lead free only 4 Bump Thin micro SMD 0 5 mm max height Date Code Date Code NSC Drawing XPAO4HLA UPAOAGKA TPAOAGKA www national com seules Dojeuy ZLOLAWT LMV1012 Analog Series Typical Performance Characteristics Uniess otherwise specified Vs 2 2V 2 2 kQ C 22 pF single supply T4 25 C Supply Current vs Supply Voltage LMV1012 07 180 170 SUPPLY CURRENT uA R LL LL AT ATA SUPPLY VOLTAGE V 20058718 Supply Current vs Supply Voltage LMV1012 20 SUPPLY CURRENT uA _ _ ENT 2 25 3 35 4 45 5 5 5 SUPPLY VOLTAGE V 20058724 Gain and Phase vs Frequency LMV1012 07 300 10 ULL UN DU aso PN s LORI HL aoo l ML f ci ix s UN TN 5 2 4 LE LUN 50 aoo 8 LUN LUN LL LUE LUN ao 10 100 1k 10k 100k 1 FREQUENCY Hz 20058714 www national com Supply Current vs Supply Voltage LMV1012 15 SUPPLY CURRENT uA SUPPLY VOLTAGE V 20058704 Supply Current vs Supply Voltage LMV1012 25 220 200 180 160 140 L SUPP
16. y responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications National Semiconductor Japan Customer Support Center Fax 81 3 5639 7507 Email jpn feedback Q9 nsc com Tel 81 3 5639 7560 National Semiconductor Asia Pacific Customer Support Center Email ap support 9 nsc com seuoudojJor y 9J1M z ures uBiH 20 5 91 sales 6ojeuy ZLOLAWT
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National LMV1012 Analog Series handbook