PHILIPS BLF521 handbook
Contents
1. 29 7 17 2 0 693 0 678 137 1 151 7 3 622 2 959 76 5 61 4 9 4 4 0 0 139 0 675 157 6 163 5 2 131 1 874 1 656 54 7 48 8 168 8 1 478 43 0 12 f MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE ratio deg ratio deg ratio deg 25 9 S21 160 6 0 044 S22 MAGNITUDE ratio 58 7 95 1 11 435 9 534 136 8 111 3 72 0 50 1 0 092 0 125 116 7 130 3 6 529 4 783 96 0 84 8 0 134 0 135 28 6 16 7 140 8 147 8 3 663 2 988 75 9 68 4 9 2 4 3 0 133 0 128 154 9 166 3 2 515 2 154 160 5 1 897 54 6 0 117 61 2 48 8 0 7 1 3 0 123 0 111 November 1992 171 7 1 673 1 493 43 0 11 0 103 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Measured at Vps 12 5 V and Ip 200 mA LU EI ratio deg ratio deg ratio deg 26 7 11 660 160 1 0 044 71 4 0 854 30 4 60 7 135 9 0 091 0 783 67 7 0 131 0 666 127 6 0 132 0 657 140 3 142 4 2 968 75 3 0 130 0 658 148 7 150 0 67 8 0 126 0 659 155 0 156 7 2 137 60 7 0 120 0 662 160 0 162 2 54 3 0 114 0 664 164 6 167 8 1 656 48 4 0 108 1 7 0 670 168 9 173 0 1 476 42 8 0 100 0 5 0 677 173 0 EE ERE E ss MAGNITUDE ANGLE MAGNITUDE ANGLE ratio2. 5 mm copper length 3 75 mm wire int dia 3 mm leads 2 x 4 mm grade 3B Ferroxcube RF choke 4312 020 36642 L8 stripline note 3 83 0 18 6 x 2 mm L9 stripline note 3 83 0 31 6 x 2mm stripline note 3 83 0 2x2mm R1 0 4 W metal film resistor 274 Q 2322 151 72741 R2 0 4 W metal film resistor 1 96 ka 2322 151 71962 R3 0 4 W metal film resistor 1 MQ 2322 151 71005 R5 0 4 W metal film resistor 7 5 kQ 2322 151 77502 R6 1 W metal film resistor 100 2322 153 51009 Notes 1 American Technical Ceramics ATC capacitor type 100B or other capacitor of the same quality 2 American Technical Ceramics ATC capacitor type 100A or other capacitor of the same quality 3 The striplines are on a double copper clad printed circuit board with PTFE fibre glass dielectric e 2 2 thickness 1 6 mm November 1992 8 Philips Semiconductors Product specification UHF power MOS transistor BLF521 MBA381 R 150 mm rivets i RR a c 5 rivets 70 mm o o mounting screws 6x y MBA380 The circuit and components are situated on one side of the printed circuit board the other side being fully metallized to serve as a ground plane Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets Fig 12 Component layout for 500 MHz test circuit November 1992 9 Philips Semiconductors UHF p
3. BOL PARAMETER CONDITIONS MIN TYP MAX UNIT drain source breakdown voltage V BR DSS Ves 0 Ip 3 mA Ipss drain source leakage current Vas 0 Vps 12 5V Ves 20 V Vps 0 lass gate source leakage current Vastth gate source threshold voltage Ip 3 mA Vps 10 V Jfs forward transconductance Ip 0 3 A Vps 10 V Rps on drain source on state resistance Ip 0 3 A Ves 15 V on state drain current Vas 15 V Vps 10 V Cis input capacitance Vas 0 Vps 12 5 V f 1 MHz Cos output capacitance Vas 0 Vps 12 5 V f 1 MHz Crs feedback capacitance Vas 0 Vps 12 5 V f 1 MHz 1 8 15 MDA485 1600 MDA484 ID T C mV K mA 10 EE 1200 E 800 0 400 A 3 0 4 8 12 16 20 2 3 1 10 10 Ip A 10 Vas V Vps 10 V Vos 10 V Tj 25 C Fig 4 Temperature coefficient of gate source Fig 5 Drain current as a function of gate source voltage as a function of drain current typical voltage typical values values November 1992 Philips Semiconductors UHF power MOS transistor MDA483 80 120 160 lp 0 3 A Ves 15 V Fig 6 Drain source on state resistance as a function of junction temperature typical values 10 Pr
4. O BLF5219 0 0 DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification UHF power MOS transistor BLF521 FEATURES PIN CONFIGURATION High power gain e Easy power control 1 e Gold metallization e Good thermal stability 2 d e Withstands full load mismatch ie THEY Designed for broadband operation ME DESCRIPTION Top view MSB007 Silicon N channel enhancement mode vertical D MOS transistor Fig 1 Simplified outline and symbol designed for communications transmitter applications in the UHF frequency range CAUTION The device is supplied in an antistatic package The gate source input must be protected against static charge during transport and handling The transistor is encapsulated in a 4 lead SOT172D studless envelope with a ceramic cap All leads are isolated from the mounting base WARNING PINNING SOT172D Product and environmental safety toxic materials PIN DESCRIPTION This product contains beryllium oxide The product is entirely safe provided that the BeO disc is not damaged All persons who handle use or dispose of 1 source this product should be aware of its nature and of the necessary safety 2 gate precautions After use dispose of as chemical or special waste according to 3 drain the regulations applying at the location o
5. deg ratio deg ratio deg ratio deg 27 3 11 640 159 7 0 045 70 8 0 832 31 3 62 0 135 2 0 092 48 9 0 766 69 2 6 434 27 4 4 674 16 0 3 582 8 9 143 9 2 914 74 7 0 128 4 2 0 651 150 8 67 4 0 124 0 654 157 6 2 097 60 3 0 119 0 6 0 658 163 1 53 8 0 113 0 660 168 8 1 625 48 0 0 106 1 3 0 667 174 1 42 2 0 099 0 673 November 1992 12 Philips Semiconductors UHF power MOS transistor PACKAGE OUTLINE Studless ceramic package 4 leads UNIT inches Product specification BLF521 SOT172D OUTLINE REFERENCES VERSION JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT172D Fre 97 06 28 November 1992 13 Philips Semiconductors Product specification UHF power MOS transistor BLF521 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these
6. er load power typical values typical values November 1992 6 Philips Semiconductors Product specification UHF power MOS transistor BLF521 ae 4 012 c3 D U T L5 L8 L9 2 C15 m ci L1 L2 L3 L4 500 77 JH output input s BLF521 ze Cis C14 ZG m m 7 AL a gt 7 7 C7 Re C11 cs HAHA ca f IR NAIR B5 L7 R3 C9 C6 DOI A R cio Hii LR y Y 4 Vp MDA475 i R4 R5 f 500 MHz Fig 11 Test circuit for class B operation November 1992 7 Philips Semiconductors Product specification UHF power MOS transistor BLF521 List of components class AB test circuit COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO C1 C5 C8 C15 multilayer ceramic chip capacitor 390 pF 500 V note 1 C2 C13 film dielectric trimmer 210 9 pF 2222 809 09002 C3 multilayer ceramic chip capacitor 5 6 pF 500 V note 2 film dielectric trimmer 2 to 18 pF 2222 809 09003 multilayer ceramic chip capacitor 2x 100 nF in 2222 852 47104 parallel 50 V multilayer ceramic chip capacitor 100 nF 50 V 2222 852 47104 electrolytic capacitor 10 uF 63 V 2222 030 38109 multilayer ceramic chip capacitor 9 1 pF 50 V note 2 film dielectric trimmer 1 4 to 5 5 pF 2222 809 09001 stripline note 3 20x2mm stripline note 3 21x2mm stripline note 3 19x 2mm stripline note 3 12x 3mm 5 turns enamelled 0
7. f the user It must never be thrown 4 source out with the general or domestic waste QUICK REFERENCE DATA RF performance at Tamb 25 C in a common source test circuit MODE OF OPERATION CW class B November 1992 2 Philips Semiconductors Product specification UHF power MOS transistor BLF521 LIMITING VALUES In accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT drain source voltage gate source voltage DC drain current total power dissipation up to Tmb 25 C storage temperature junction temperature THERMAL RESISTANCE THERMAL SYMBOL PARAMETER RESISTANCE Rin j mb thermal resistance from junction to mounting base 17 5 KAN Rin ja thermal resistance from junction to ambient note 1 75 K W Note 1 Mounted on printed circuit board see Fig 12 MRA989 MDA486 5 16 Ptot Ip w 4 0 100 0 40 80 120 Tmb C 1 Current in this area may be limited by Rpston 1 Continuous operation 2 Tmb 25 C 2 Short time operation during mismatch Fig 2 DC SOAR Fig 3 Power temperature derating curves November 1992 3 Philips Semiconductors Product specification UHF power MOS transistor BLF521 CHARACTERISTICS Tj 25 C unless otherwise specified SYM
8. oduct specification BLF521 MDA482 Vas 0 f 1 MHz Fig 7 Input and output capacitance as functions of drain source voltage typical values MDA481 Ves 0 f 1 MHZ Fig 8 Feedback capacitance as a function of drain source voltage typical values November 1992 Philips Semiconductors Product specification UHF power MOS transistor BLF521 APPLICATION INFORMATION FOR CLASS B OPERATION Tamb 25 C Ras 274 Q unless otherwise specified RF performance in a common source class B test circuit Vps Ipa PL Gp ND CW class B 12 5 gt 10 gt 50 typ 13 typ 60 Ruggedness in class B operation The BLF521 is capable of withstanding a load mismatch corresponding to VSWR 50 1 through all phases under the following conditions Vps 15 5 V f 500 MHz at rated output power MDA479 MDA480 20 100 4 Gp nD PL dB W 16 80 Gp 3 12 nD 60 2 8 40 1 4 20 y gt 0 0 2 0 4 0 6 0 8 0 0 5 1 5 2 5 3 5 PL W PIN W Class B operation Vps 12 5 V Ibo 10 mA Z 29 5 j12 8 f 500 MHz Class B operation Vos 12 5 V Iba 20 mA Z 9 5 j12 8 f 175 MHz Fig 9 Power gain and efficiency as functions of Fig 10 Load power as a function of input pow
9. or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale November 1992 14
10. ower MOS transistor MDA478 x 100 100 200 300 400 500 f MHz Class B operation Vps 12 5 V Ibo 10 mA Ras 274 Q PL 2W Fig 13 Input impedance as a function of frequency series components typical values per section Product specification BLF521 MDA477 50 ZL Q 40 30 RL 20 XL 10 0 100 200 300 400 500 f MHz Class B operation Vps 12 5 V Ibo 10 mA Ras 274 Q PL 2W Fig 14 Load impedance as a function of frequency series components typical values Zi ZL MBA379 Fig 15 Definition of MOS impedance November 1992 MDA476 12 0 100 200 300 400 500 f MHz Class B operation Vps 12 5 V Ibo 10 mA Ras 274 Q Pi 2W Fig 16 Power gain as a function of frequency typical values Philips Semiconductors Product specification UHF power MOS transistor BLF521 Common emitter S parameters Measured at Vps 12 5 V and Ip 100 mA S1 S21 S12 S22 MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE ratio deg ratio deg ratio deg 24 0 10 749 161 5 0 044 MAGNITUDE ratio 0 900 55 4 91 0 9 105 138 3 112 7 12 6 51 7 0 094 0 130 0 828 0 735 112 4 127 0 6 353 4 693 97 0 85 6 0 140 0 141
Download Pdf Manuals
Related Search
PHILIPS BLF521 handbook