PHILIPS BLF245 handbook
Contents
1. September 1992 3 Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V BR DSS drain source breakdown voltage Ves 0 lp 10mA V lpss drain source leakage current Vas 0 Vps 28 V mA gate source leakage current Ves 20 V Vps 0 uA gate source threshold voltage Ip 10 mA Vps 10V V gate source voltage difference of lp 10 mA Vps 10 V mV matched devices forward transconductance Ib 1 5 A Vps 10 V gt S drain source on state resistance lp 1 5A Vas 10 V Q on state drain current Vas 10 V Vps 10 V A input capacitance Vas 0 Vps 28 V f 1 MHz pF output capacitance Vas 0 Vps 28 V f 1 MHz pF feedback capacitance Vas 0 Vps 28 V f 1 MHz pF noise figure see Fig 14 input and output power matched for dB Ip 1 A Vps 28 V PL 30W R1 1 KQ Th 25 C f 175 MHz MGP168 MGP169 12 T C mV K l Ip A 8 4 410 102 108 104 a 20 Ip mA Vps 10 V valid for Tj 25 to 125 C Vos 10V Fig 4 Temperature coefficient of gate source Fig 5 Drain current as a function of gate source voltage as a functio2. Z e i l D U T L3 L6 ji r Z EA 50 2 C1 ti i L2 AP output 50 Q w c8 input C10 c3 HR c5 R2 yH Ra HR FR L5 VGG VDD MGP174 f 175 MHz Fig 13 Test circuit for class B operation September 1992 7 Philips Semiconductors VHF power MOS transistor List of components class B test circuit Product specification BLF245 COMPONENT DESCRIPTION film dielectric trimmer VALUE 4 to 40 pF DIMENSIONS CATALOGUE NO film dielectric trimmer multilayer ceramic chip capacitor 5 to 60 pF 100 pF multilayer ceramic chip capacitor ceramic capacitor 100 nF multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor note 1 3 turns enamelled 0 5 mm copper stripline note 2 length 3 5 mm int dia 2mm leads 2 x 2mm 10x6mm 6 turns enamelled 1 5 mm copper wire length 12 5 mm int dia 5 mm leads 2 x 2 mm grade 3B Ferroxcube RF choke 2 turns enamelled 1 5 mm copper length 4 mm int dia 5 mm leads 2 x 2 mm metal film resistor metal film resistor Notes metal film resistor 1 American Technical Ceramics ATC capacitor type 100B or other capacitor of the same quality 2 The striplines are mounted on a double copper clad PCB with epoxy fibre glass dielectric e 4 5 thickness 146 inch September 1992 Philips Semiconductors Product specification VHF po
3. 0 20 40 60 80 100 120 f MHz Class B operation Vps 28 V Ipo 50 mA PL 30W Th 25 C Rih mb h 0 3 K W Fig 18 Power gain as a function of frequency typical values Philips Semiconductors Product specification VHF power MOS transistor BLF245 PACKAGE OUTLINE Flanged ceramic package 2 mounting holes 4 leads SOT123A scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT123A E 97 06 28 September 1992 11 Philips Semiconductors Product specification VHF power MOS transistor BLF245 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditio
4. O O BLF245 0 O DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification September 1992 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification VHF power MOS transistor BLF245 FEATURES High power gain Low noise figure e Easy power control e Good thermal stability e Withstands full load mismatch DESCRIPTION Silicon N channel enhancement mode vertical D MOS transistor designed for large signal amplifier applications in the VHF frequency range The transistor is encapsulated in a 4 lead SOT 123 flange envelope with a ceramic cap All leads are isolated from the flange Matched gate source voltage Vas groups are available on request PINNING SOT123 PIN DESCRIPTION drain source gate source AGO p QUICK REFERENCE DATA PIN CONFIGURATION MBB072 S MSB057 Fig 1 Simplified outline and symbol CAUTION The device is supplied in an antistatic package The gate source input must be protected against static charge during transport and handling WARNING Product and environmental safety toxic materials This product contains beryllium oxide The product is entirely safe provided that the BeO disc is not damaged All persons who handle use or dispose of this product should be aware of its nature and of the necessary safety precautions After use dispose of as chemical or special was
5. j1 3 Note 1 R1 included Ruggedness in class B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR 50 through all phases under the following conditions Th 25 C Rih mo n 0 3 K W at rated load power 20 MGP172 100 60 MEA736 PL G nD w p Gp dB 50 7 ND 7 A 40 10 50 30 20 010 20 30 40 50 gt 0 0 6 1 2 1 8 2 4 EP Pin W Class B operation Vps 28 V Ipo 50 mA Class B operation Vps 28 V Ipa 50 mA f 175 MHz Th 25 C Rih mb h 0 3 K W f 175 MHz Th 25 C Rih mo n 0 3 K W Fig 9 Power gain and efficiency as functions of Fig 10 Load power as a function of input power load power typical values typical values September 1992 Philips Semiconductors Product specification VHF power MOS transistor BLF245 MGP173 MEA737 20 20 a Gp nD PL J7 dB w np __ _ Kel 10 50 10 0 0 0 0 10 p 20 0 0 6 1 2 1 8 24 L W PIN W Class B operation Vps 12 5 V Ipo 50 mA Class B operation Vps 12 5 V Ibo 50 mA f 175 MHz Th 25 C Rin mb h 0 3 K W f 175 MHz Th 25 C Rin mb h 0 3 K W Fig 11 Power gain and efficiency as functions of Fig 12 Load power as a function of input power load power typical values typical values C7 JE gt
6. n of drain current typical voltage typical values values September 1992 4 Philips Semiconductors VHF power MOS transistor MGP170 0 8 RDS on Q 0 6 0 4 0 2 12 1 0 40 80 0 T C 60 Vas 10 V Ip 1 5A Fig 6 Drain source on state resistance as a function of junction temperature typical values 40 Product specification BLF245 MGP171 10 20 30 40 Ves 0 f 1 MHz Fig 7 Input and output capacitance as functions of drain source voltage typical values MRA920 20 Crs pF 10 Vps V Ves 0 f 1 MHZ Fig 8 Feedback capacitance as a function of drain source voltage typical values September 1992 Philips Semiconductors Product specification VHF power MOS transistor BLF245 APPLICATION INFORMATION FOR CLASS B OPERATION Th 25 C Rih mo n 0 3 K W R1 1 KQ RF performance in CW operation in a common source class B test circuit v I P G Nb Zi ZL MODE OF OPERATION pS pe L P Q vy mA W dB sa 9 note 1 CW class B 28 50 30 gt 13 lt 50 2 0 j2 7 3 9 j4 4 typ 15 5 typ 67 12 5 50 12 typ 12 typ 66 2 4 j2 5 3 8
7. ns above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale September 1992 12
8. te according to the regulations applying at the location of the user It must never be thrown out with the general or domestic waste RF performance at Th 25 C in a class B test circuit f Vps PL Gp nD MODE OF OPERATION MHz V w dB CW class B 175 28 30 gt 13 gt 50 September 1992 2 Philips Semiconductors Product specification VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT drain source voltage Ves 0 gate source voltage Vos 0 DC drain current total power dissipation up to Tmb 25 C storage temperature junction temperature THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j mb thermal resistance from Tmb 25 C Ptot 68 W 2 6 K W junction to mounting base Rth mb h thermal resistance from Tmb 25 C Ptot 68 W 0 3 K W mounting base to heatsink MRA921 MGP167 10 100 Ptot w 80 60 40 20 102 0 40 80 120 160 Vps V Th C 1 Current is this area may be limited by Rps on 2 Tro 25 C 1 Continuous operation 2 Short time operation during mismatch Fig 2 DC SOAR Fig 3 Power temperature derating curves
9. wer MOS transistor BLF245 copper straps rivets copper strap copper straps MGP175 The circuit and components are situated on one side of the epoxy fiber glass board the other side is unetched copper and serves as an earth Earth connections are made by means of fixing screws hollow rivets and copper straps under the sources and around the edges to provide a direct contact between the copper on the component side and the ground plane Dimensions in mm Fig 14 Component layout for 175 MHz class B test circuit September 1992 9 Philips Semiconductors VHF power MOS transistor MGP177 40 Zi Q 30 20 10 ri eS E S EE 0 20 40 60 80 100 120 Class B operation Vps 28 V Ipo 50 mA PL 30 W Th 25 C Rih mb h 0 3 K W Fig 15 Input impedance as a function of frequency series components typical values Product specification BLF245 MGP178 16 z Q 12 RL 8 x 3 L 0 20 40 60 80 100 120 f MHz Class B operation Vps 28 V Ipo 50 mA PL 30 W Th 25 C R mb h 0 3 K W Fig 16 Load impedance as a function of frequency series components typical values Zi ZL MBA379 Fig 17 Definition of MOS impedance September 1992 MGP179 40 Gp dB 30 20 10
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PHILIPS BLF245 handbook