PHILIPS PowerMOS transistor BUK446-800A/B handbook
Contents
1. 20 40 VDS V Ss 12 Typical capacitances Cs Cos Cros f Vps conditions Veg 0 V f 1 MHz Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK446 800A B 0 20 40 0 1 QG nC VSDS V Fig 13 Typical turn on gate charge characteristics Fig 14 Typical reverse diode current Vos Q conditions 4 A parameter Vps l f Vsps conditions Vg 0 V parameter T May 1995 5 Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK446 800A B MECHANICAL DATA Dimensions in mm Net Mass 2 g seating plane 3 5 max not tinned top view Fig 15 SOT186 The seating plane is electrically isolated from all terminals Notes 1 Observe the general handling precautions for electrostatic discharge sensitive devices ESDs to prevent damage to MOS gate oxide 2 Refer to mounting instructions for F pack envelopes 3 Epoxy meets UL94 VO at 1 8 May 1995 6 Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK446 800A B DEFINITIONS Data she2. 4 2 2 4 6 ID A Fig 6 Typical on state resistance T 25 C Fosion f Ip parameter Vag Rev 1 200 Philips Semiconductors PowerMOS transistor 0 2 6 8 VGS V Fig 7 Typical ae characteristics f Vgs conditions V ps 25 V parameter T 0 2 4 6 ID A Fig 8 Bae transconductance T 2 f I conditions Vps 5 a Normalised RDS ON f Tj 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 9 Normalised drain source on state resistance a Roson Rosionzs co f T Ip 1 5 A Vas 10 V May 1995 Product Specification BUK446 800A B VGS TO V u 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 10 Gate threshold voltage Vasto f T conditions Ip 1 MA Vps Ves SUB THRESHOLD CONDUCTION 0 1 2 3 4 VGS V A 11 Sub threshold drain vials f Vgs conditions T 25 J Vos Vas
3. 00 P Pp 25 c f T hs Normalised Current Derating with hedtsink compound 20 40 60 80 100 120 140 Ths C Fig 2 Normalised continuous drain current ID 100 IpIp 05 f T conditions Veg 10 V 0 01 10 100 1000 VDS V Fig 3 Safe operating area T 25 C Ip amp lom f Vos low single pulse parameter t May 1995 Product Specification BUK446 800A B o ZPK D 0 5 0 2 0 1 0 05 0 02 R b ar tas Oe nate ti 001 Ey ary i IN 1 renin 1E 07 1E 05 1E 03 1E 01 1E 01 t s Fig 4 Transient thermal impedance Zn ins F t parameter D t T 8 12 16 20 24 28 VDS V Fig 5 Typical output characteristics T 25 C Ip f Vps parameter Vos 5 RDS ON Ohm
4. O0 O0 BUK446 800A0 0 0 Philips Semiconductors Product Specification PowerMOS transistor BUK446 800A B GENERAL DESCRIPTION N channel enhancement mode field effect power transistor in a plastic full pack envelope The device is intended for use in Switched Mode Power Supplies SMPS motor control welding DC DC and AC DC converters and QUICK REFERENCE DATA PARAMETER BUK446 Drain source voltage Drain current DC Total power dissipation Drain source on state in general purpose switching resistance applications PINNING SOT186 DESCRIPTION PIN CONFIGURATION SYMBOL gate drain source isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Drain source voltage Drain gate voltage Gate source voltage Drain current DC Drain current DC Drain current pulse peak value Total power dissipation Storage temperature Junction Temperature SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Thermal resistance junction to with heatsink compound 4 16 K W heatsink Thermal resistance junction to 55 K W ambient May 1995 1 Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK446 800A B STATIC CHARACTERISTICS Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS min TYP MAX UNIT V Drain source breakdown Ves 0 V Ip 0 25 mA voltage Gate th
5. et status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or system
6. reshold voltage Zero gate voltage drain current V T Zero gate voltage drain current 00 V T Gate source leakage current V Drain source on state BUK446 800A resistance f BUK446 800B DYNAMIC CHARACTERISTICS Tas 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP Input capacitance Output capacitance Feedback capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Internal drain inductance Measured from drain lead 6 mm from package to centre of die Internal source inductance Measured from source lead 6 mm from package to source bond pad ISOLATION LIMITING VALUE amp CHARACTERISTIC Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Repetitive peak voltage from all R H lt 65 clean and dustfree three terminals to external heatsink Capacitance from T2 to external f 1 MHz heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Continuous reverse drain current Pulsed reverse drain current Diode forward voltage A dl dt 100 A us V Va 100 V May 1995 2 Rev 1 200 Philips Semiconductors PowerMOS transistor Normalised Power Derating with hea tsink campdgund 20 40 60 80 100 120 140 Ths C Fig 1 Normalised power dissipation PD 1
7. s where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale May 1995 7 Rev 1 200
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PHILIPS PowerMOS transistor BUK446 800A/B handbook