PHILIPS PowerMOS transistor BUK445-200A/B handbook
Contents
1. t T Rev 1 100 Philips Semiconductors PowerMOS transistor 4 6 8 10 12 14 16 18 20 VDS V Fig 5 Typical output characteristics T 25 C Ip f Vps parameter Vos RDS ON Ohm 4 4 5 4 8 12 16 20 24 28 ID A Fig 6 Typical on state resistance T 25 C Roson f Ip parameter Vas 8 6 VGS V Fig 7 Typical transfer characteristics Ip f Veg conditions Vps 25 V parameter T April 1993 Product Specification BUK445 200A B 4 8 12 16 20 24 28 ID A Fig 8 Typical transconductance T 25 C gs fl conditions Vps 25 V Normalised RDS ON f T 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 9 Normalised drain source on state resistance a Apsion Rosiomes c f T Ip 7 A Vas 1 VGS TO V 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 10 Gate threshold voltage Vesrro F2. O0 O0 BUK445 200A0 0 O Philips Semiconductors Product Specification PowerMOS transistor BUK445 200A B GENERAL DESCRIPTION N channel enhancement mode field effect power transistor in a plastic full pack envelope The device is intended for use in Switched Mode Power Supplies SMPS motor control welding DC DC and AC DC converters and in general purpose switching applications PINNING SOT186 DESCRIPTION gate drain source isolated LIMITING VALUES QUICK REFERENCE DATA PARAMETER BUK445 Drain source voltage Drain current DC Total power dissipation Junction temperature Drain source on state resistance Limiting values in accordance with the Absolute Maximum System IEC 134 Drain source voltage Drain gate voltage Gate source voltage Drain current DC Drain current DC 200 200 30 200A 200B 7 4 4 Drain current pulse peak value Ths i 28 Total power dissipation Storage temperature Junction Temperature SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Thermal resistance junction to with heatsink compound 4 17 K W heatsink Thermal resistance junction to 55 K W ambient April 1993 1 Rev 1 100 Philips Semiconductors Product Specification PowerMOS transistor BUK445 200A B ae CHARACTERISTICS 25 C unless otherwise specified sywsot panaweren ___ eowomions um ve a or Drain source breakdown Ves 0 V Ip 0 25 mA voltag
3. PARAMETER CONDITIONS Product Specification BUK445 200A B Woss Drain source non repetitive Ip 14A Vpp lt 100 V 100 mJ unclamped inductive turn off Ves 10 V Res 50 Q energy Normalised Power Derating with heg tsink campd und 20 40 60 80 Ths C ig 1 Normalised power dissipation PD 100 P Pp 25 c f T hs Normalised Current Derating with hedtsink compound 20 40 60 80 100 120 140 Ths C Fig 2 Normalised continuous drain current ID 100 1pIp 25 c f T 5 conditions Vag 2 10 V April 1993 0 1 1 10 100 1000 VDS V Fig 3 Safe operating area T 25 C Ip amp lom f Vos low single pulse parameter t o ZPK 0 001 1E 07 1E 05 Fig 4 Transient thermal impedance Zn jns F t parameter D
4. T conditions Ip 1 MA Vps Ves Rev 1 100 Philips Semiconductors PowerMOS transistor SUB THRESHOLD CONDUCTION 0 1 2 3 4 VGS V ms 11 Sub threshold drain current f Vgs conditions T 25 C Vos Ves 10 0 20 40 VDS V ee 12 Typical capacitances Css Ces L Css f Vps conditions Vos 0 V f 1 MHz Z a 10 20 30 QG nC Fig 13 Typical turn on gate charge characteristics Vos f Qe conditions Ip 14 A parameter Vps April 1993 Product Specification BUK445 200A B 1 VSDS V Fig 14 Typical reverse diode current f Vsps conditions Veg 0 V parameter T 60 80 100 120 140 Ths C Fig 15 Normalised avalanche energy rating Woss f T s conditions lp 14 A IL O RGS Fig 16 Avalanche energy test circuit Wpss 0 5 LI BV pssl BV pss Vpp Rev 1 100 Philips Semiconductors Product Specific
5. ation PowerMOS transistor BUK445 200A B MECHANICAL DATA Dimensions in mm Net Mass 2 g seating plane 3 5 max not tinned top view Fig 17 SOT186 The seating plane is electrically isolated from all terminals Notes 1 Observe the general handling precautions for electrostatic discharge sensitive devices ESDs to prevent damage to MOS gate oxide 2 Refer to mounting instructions for F pack envelopes 3 Epoxy meets UL94 VO at 1 8 April 1993 6 Rev 1 100 Philips Semiconductors Product Specification PowerMOS transistor BUK445 200A B DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application informa
6. e Gate threshold voltage Zero gate voltage drain current 1 25 C Zero gate voltage drain current 00 T 125 C Gate source leakage current gt Vos Drain source on state 0 V BUK445 200A resistance BUK445 200B DYNAMIC CHARACTERISTICS Tas 25 C unless otherwise specified SYMBOL PARAMETER a __ Forward a Vos 25 Vilp 7A eae ee ee Cis Input capacitance Ves 0 V Vps 25 V f 1 MHz Output capacitance Feedback capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Internal drain inductance Measured from drain lead 6 mm from package to centre of die Internal source inductance Measured from source lead 6 mm from package to source bond pad ISOLATION LIMITING VALUE amp CHARACTERISTIC Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN vP MAX UNIT Visol Repetitive peak voltage from all R H lt 65 clean and dustfree 1500 V three terminals to external heatsink Cisol Capacitance from T2 to external f 1 MHz 12 pF heatsink IE DIODE LIMITING VALUES AND CHARACTERISTICS 25 C unless otherwise specified Sreo parameter Jeonomons um ve ma or Continuous reverse drain current Pulsed reverse drain current Diode forward voltage A dl dt 100 A us iV OV R April 1993 2 Rev 1 100 Philips Semiconductors PowerMOS transistor AVALANCHE LIMITING VALUE Ths 25 C unless otherwise specified SYMBOL
7. tion Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale April 1993 7 Rev 1 100
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PHILIPS PowerMOS transistor BUK445 200A/B handbook