Philips Semiconductors PowerMOS transistor BUK436W-1000B Product specification
Contents
1. Fig 1 Normalised power dissipation PD 100 P Pp 250 F T mp Normalised Current Derating 20 40 60 80 100 120 140 Tmb C Fig 2 Normalised continuous drain current ID 100 Ip Ip 05 c I T m Conditions Veg 10 V 0 1 10 100 Fig 3 Safe operating area T 25 C Ip amp lom f Vos low single pulse parameter t March 1998 Product specification BUK436W 1000B o Zthimb K E temperie 1E 05 1E 03 1E 01 1E 01 t s Fig 4 Transient thermal impedance Zn j mp f parameter D t T 0 8 12 16 VDS V Fig 5 Typical output characteristics T 25 C Ip f Vps parameter Vos RDS ON Ohm 4 2 4 42. 1 2 3 ID A Fig 6 Typical on state resistance T 25 C Foson f Ip parameter Vag Rev 1 000 Philips Semiconductors PowerMOS transistor 4 6 VGS V Fig 7 Typical eee characteristics Ip f Ves conditions Vps 25 V parameter T 6 ID A Fig 8 geet transconductance T 25 C f I conditions Vps 5 V Normalised RDS ON f T 0 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 9 Normalised drain source on state resistance a Roscon Rosiomas co f T Ip 1 5 A Vas 10 V March 1998 Product specification BUK436W 1000B vente V 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 10 Gate threshold voltage Vasto f T conditions Ip 1 MA Vps Ves SUB THRESHOLD CONDUCTION 0 1 2 3 4 VGS V ms 11 Sub threshold drain current f Vgs conditions T 25 C Vos Ves
3. 20 40 VDS V a 12 Typical capacitances Cs Cos Cros f Vps conditions Veg 0 V f 1 MHz Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK436W 1000B 10 20 30 40 0 1 QG nC VSDS V Fig 13 Typical turn on gate charge characteristics Fig 14 Typical reverse diode current Vcs Qo conditions lp 3 5 A parameter Vps l f Vsps conditions Veg 0 V parameter T March 1998 5 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK436W 1000B MECHANICAL DATA Dimensions in mm Net Mass 5 g ee RRS LRT ARERR SSS 2826222 RO BOM sob S SOK RO seating plane Ng SSX SRN 6004040404040404 TEI 06 0 4 M p 5 45 Pea Fig 15 SOT429 TO247 pin 2 connected to mounting base Notes 1 Observe the general handling precautions for electrostatic discharge sensitive devices ESDs to prevent damage to MOS gate oxide 2 Refer to mounting instructions for SOT429 envelopes 3 Epoxy meets UL94 VO at 1 8 March 1998 6 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK436W 1000B DEFINITIONS Da
4. 0 0 BUK436W 10008 0 0 Philips Semiconductors Product specification PowerMOS transistor BUK436W 1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N channel enhancement mode SYMBOL PARAMETER field effect power transistor in a plastic envelope Vos Drain source voltage The device is intended for use in Ip Drain current DC Switched Mode Power Supplies Prot Total power dissipation SMPS motor control welding Roson Drain source on state DC DC and AC DC converters and resistance in general purpose switching applications PINNING SOT429 TO247 PIN CONFIGURATION SYMBOL DESCRIPTION gate drain source drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Drain source voltage Drain gate voltage Gate source voltage Drain current DC Drain current DC Drain current pulse peak value Total power dissipation Storage temperature Junction temperature 1 on 1 1 1 1 1 1 1 ol OOf gt rrr lt lt lt SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Thermal resistance junction to 1 0 K W mounting base Thermal resistance junction to 45 K W ambient March 1998 1 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK436W 1000B STATIC CHARACTERISTICS Tm 25 C unless otherwise specified sywsot panaweren ___ eowpmions Ton a vr Drain source breakdown Ves 0 V Ip 0 25 mA volta
5. ge Gate threshold voltage Vos Ves Ip 1 MA Zero gate voltage drain current yes 1000 V Ves 0 V T Zero gate voltage drain current Vps5 1000 v Vos 0 v Gate source leakage current Ves 30 V Vos 0V Drain source on state Ves 10 V Ip 1 5A resistance DYNAMIC CHARACTERISTICS Tmo 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS an rye MAX UNIT jou Forward transconductance Vos 25 V lp 1 5 A 30 43 l s Cis Input capacitance Ves 0 V Vps 25 V f 1 MHz yee 1250 pF Output capacitance A pF Feedback capacitance pF Turn on delay time A ns Turn on rise time f 40 ns Turn off delay time Bo 150 ns Turn off fall time 40 60 ns Internal drain inductance Measured from contact screw on 5 nH tab to centre of die Internal drain inductance Measured from drain lead 6 mm 5 nH from package to centre of die Internal source inductance Measured from source lead 6 mm 12 5 nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tm 25 C unless otherwise specified Sro panameren_____ Jeonomons mm ve max TunT Continuous reverse drain current Pulsed reverse drain current Diode forward voltage 3 1 0 t Reverse recovery time l 3 5 A dl dt 100 A us 1800 ns Qr Reverse recovery charge Ves 0 V Vg 100 V 12 uC March 1998 2 Rev 1 000 Philips Semiconductors PowerMOS transistor Normalised Power Derating
6. systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale March 1998 7 Rev 1 000
7. ta sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1998 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or
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Philips Semiconductors PowerMOS transistor BUK436W 1000B Product specification