PHILIPS BUK206-50Y handbook(1)
Contents
1. Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y MECHANICAL DATA Dimensions in mm 10 3 MAX Net Mass 1 5 g 0 85 MAX x4 Fig 38 SOT426 mounting base connected to centre pin cropped short MOUNTING INSTRUCTIONS Dimensions in mm tae 17 lt 1 7 s FE 1 3 x4 i i Fig 39 SOT426 soldering pattern for surface mounting July 1996 12 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specifi2. 60 100 140 180 Tj C Fig 9 Typical on state resistance t 300 us Ron f T parameter Vgc condition 2 A Rev 1 000 Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y BUK206 50Y CLAMP OPERATING VIG 3V GH VOLTAGE QUIESCENT VIG 0V 0 10 20 30 40 50 60 VBG V Fig 10 Typical supply characteristics 25 C lq Veg parameter Vig BUK206 50Y 60 20 60 100 140 180 Tj C Fig 11 Typical operating supply current I f T parameter Vsa condition Vig 5 V BUK206 50Y 10 nA 60 20 20 60 100 140 180 Tj c Fig 12 Typical supply quiescent current I f T condition Vss 13 V Vig O V Vig OV July 1996 Product specification BUK206 50Y BUK206 50Y 60 20 20 60 100 140 180 Tj C Fig 13 Typical off state leakage current f T conditions Vs 13 V Vsa Vig 0 V BUK206 50Y 2 4 6 8 VIG V Fig 14 Typ
3. BUK206 50Y urrent limiting i e before s circuit load tri 12 16 20 24 VBL V Fig 33 Typical overload characteristic T 25 C f V condition Vgg 13 V parameter t 4 8 Rev 1 000 Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y BUK206 50Y 60 20 20 60 100 140 180 Tmb C Fig 34 Typical overload current Vz 9 V I f T m conditions Vsa 13 V t 100 us BUK206 50Y 10 20 30 40 VBG V Fig 35 Typical short circuit load TO Buro f Vsa condition Tmp 2 July 1996 Product specification BUK206 50Y VBL TO V BUK206 50Y 60 20 20 60 100 140 180 Tmb C Fig 36 Typical short circuit load threshold voltage LTO f T m condition Vsa 13 Zth j mb UK206 50Y to p 0 001 cong hog 100n fu 10u 100u im 10m 100m 1 10 s Fig 37 Transient thermal impedance Zin im F t parameter D t T
4. and requires an external pull up circuit to indicate a logic high spot rarawever___foowomons__ Twn T rve max ar Status clamping voltage ls 100 uA Ve 0 V Status low voltage ls 50 WA Vag 13 V Ve 5 V 0 7 Status leakage current Vse 5 V 1 Status saturation current Vss 5 V Rs 0 Q Veg 13 V Application information External pull up resistor Vss 5 V 100 KQ 1 In the on state the switch detects whether the load current is less than the quoted open load threshold current This is for status indication only Typical hysteresis equals 230 mA The thresholds are specified for supply voltage within the normal working range 2 After cooling below ne reset temperature the switch will resume normal operation The reset temperature is lower than the trip temperature by typically 10 C 3 If the overtemperature protection has operated status remains low to indicate the overtemperature condition even if the input is taken low providing the device has not cooled below the reset temperature 4 After short circuit protection has operated the input voltage must be toggled low for the switch to resume normal operation 5 Undervoltage sensor causes the device to switch off Typical hysteresis equals 0 5 V 6 Overvoltage sensor causes the device to switch off Typical hysteresis equals 1 3 V 7 In a fault condition with the pull up resistor short circuited while the status transistor is conducting 8 The pull up resistor als
5. 24 Supply typical undervoltage thresholds Fig 27 Typical negative load clamping characteristic Veato f T conditions Vig 3 V 100 mA I f V g conditions Vig 0 V t 300 us 25 C July 1996 9 Rev 1 000 Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y BUK206 50Y 100 140 180 60 20 20 60 Tj C Mig 28 Typical negative load clamping voltage Vig f T parameter l condition Vig 0 V BUK206 50Y 60 20 20 60 100 140 180 Tj C Fig 29 Typical battery to load clamping voltage F T parameter I condition I 5 mA BUK206 50Y 15 10 5 0 VBG V Fig 30 Typical reverse battery characteristic Ig f Vsa conditions 0 A T 25 C July 1996 Product specification BUK206 50Y BUK206 50Y 1 1 0 9 0 7 0 5 0 3 0 1 VBL V a 31 Typical reverse diode a f Va conditions Vs 0 V T C BUK206 50Y 100 pF 0 10 20 30 50 VBL V rigs 32 Typical output capacitance C f V2 conditions f 1 MHz Ta 25 C Ve 0V
6. O0 O0 BUK206 50Y 0 O Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope configured as a single high side switch APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS switch Low on state resistance 5 V logic compatible input Overtemperature protection self resets with hysteresis e Overload protection against short circuit load with output current limiting latched reset by input e High supply voltage load protection e Supply undervoltage lock out e Status indication for overload protection activated e Diagnostic status indication of open circuit load e Very low quiescent current e Voltage clamping for turn off of inductive loads e ESD protection on all pins e Reverse battery and overvoltage protection PINNING SOT426 DESCRIPTION Ground Input connected to mb Status Load Battery July 1996 QUICK REFERENCE DATA SYMBOL I SYMBOL PARAMETER Nominal load current ISO PARAMETER Continuous off state supply voltage Continuous load current Continuous junction temperature On state resistance FUNCTIONAL BLOCK DIAGRAM STATUS Product specification BUK206 50Y x INPUT CONTROL amp PR
7. OTECTION CIRCUITS oe GROUND POWER MOSFET Fig 1 Elements of the TOPFET HSS with internal ground resistor PIN CONFIGURATION SYMBOL Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS Battery voltages Veo Continuous off state supply voltage Reverse battery voltages External resistors Repetitive peak supply voltage R Rg 2 4 7 KQ 8 lt 0 1 Continuous reverse supply voltage R Rs 2 4 7 KQ Continuous load current Tp 110 C Total power dissipation Tm 25 C Storage temperature Continuous junction temperature Lead temperature during soldering Input and status Continuous input current Continuous status current Repetitive peak input current Repetitive peak status current Inductive load clamping Non repetitive clamping energy ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS Vo Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS Thermal resistance Rin j mb Junction to mounting base 1 Reverse battery voltage is allowed only with external input and
8. aracteristic T 25 C ls Vso conditions Ve 5 V Vag 13 V I 0 BUK206 50Y 20 60 100 140 180 Tj C Fig 21 Typical status low voltage Vsa f T conditions ls 50 uA Ve 5 V Vag 13 V 1 0A Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y BUK206 50Y BUK206 50Y 60 20 20 60 100 140 180 60 20 60 100 140 180 Tj C Tj C Fig 22 Typical status clamping voltage Vse f T Fig 25 Supply typical overvoltage thresholds parameter Vg conditions ls 100 uA Vss 13 V Vzcap f T conditions Vig 5 V 100 mA BUK206 50Y BUK206 50Y 20 60 100 140 180 60 20 20 60 100 140 180 Tj C Tj C Fig 23 Low load current detection threshold Fig 26 Typical battery to ground clamping voltage loc f T conditions Vig 5 V Vag 13 V Vag f T parameter I BUK206 50Y BUK206 50Y 20 60 100 140 180 24 20 i 4 0 T C Fig
9. cation is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale July 1996 13 Rev 1 000
10. ical input characteristics T 25 C Vig parameter Veg BUK206 50Y 10 20 30 40 VBG V Fig 15 Typical input current T 25 C I f Vgg condition Vig 5 V Rev 1 000 Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y BUK206 50Y 20 60 100 140 180 Tj C Fig 16 Typical input threshold voltages Vig f T conditions Vsa 13 V 100 mA BUK206 50Y 6 5 60 20 20 60 100 140 180 Tj C Fig 17 Typical input clamping voltage Vig f T conditions 200 uA Vag 13 V BUK206 50Y 2 4 6 8 10 VSG V Fig 18 Typical status characteristic T 25 C ls f Vsg conditions Vig Vag 0 V July 1996 Product specification BUK206 50Y BUK206 50Y 10nA 60 20 20 60 100 140 180 Tj C Fig 19 Typical status leakage current ls f T conditions Vse 5 V Vig Veg O V BUK206 50Y VSG V _ Fig 20 Typical status low ch
11. o protects the status pin during reverse battery conditions July 1996 4 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y DYNAMIC CHARACTERISTICS Tm 25 C Vee 13 V svmeoL paramere Jconomons mn TWP max unr Inductive load turn off Vig Negative load voltage Vig 0 V I 10 A t 300 us 15 20 25 MAX UNIT 2 MAX Short circuit load protection V 5 V R lt 10 mQ Response time Load current prior to turn off t lt ty sc SWITCHING CHARACTERISTICS Tm 25 C Vag 13 V for resistive load R 13 Q SYMBOL PARAMETER CONDITIONS MIN TYP During turn on to Ve 5V Delay time to 10 V Rate of rise of load voltage Total switching time to 90 V During turn off to Ve 0 ty otf Delay time to 90 V AV dt ot Rate of fall of load voltage 2 t ot Total switching time to 10 V Input capacitance 15 Output capacitance 500 Status capacitance 11 CAPACITANCES Tmo 25 C f 1 MHz Ve 0 V SYMBOL PARAMETER CONDITIONS MIN T 1 For a high side switch the load pin voltage goes negative with respect to ground during the turn off of an inductive load This negative voltage is clamped by the device 2 The load current is self limited during the response time for short circuit load protection Response time is measured from when input goes high 3 If the load resistance is low but not a c
12. omplete short circuit such that the on state voltage remains less than Vso the device remains in current limiting until the overtemperature protection operates July 1996 5 Rev 1 000 Philips Semiconductors TOPFET high side switch SMD version of BUK202 50Y TOPFET HSS S G IG 1 Fig 4 High side switch measurements schematic current and voltage conventions Normalised Power Derating 80 100 120 140 Tmb C Fig 5 Normalised limiting power dissipation Pp 100 Px Pp 25 C T m BUK206 50Y 80 100 120 140 Tmb C Fig 6 Limiting continuous on state load current I f Tmp conditions Vig 5 V Vag 13 V July 1996 Product specification BUK206 50Y BUK206 50Y 3 0 0 2 0 4 0 6 0 8 1 VBL V Fig 7 Typical on state characteristics T 25 C J l f Ve parameter Vag t 250 us RON mOhm BUK206 50Y 1 10 100 VBG V Fig 8 Typical on state resistance T 25 C Ron f Vag conditions 10 A t 300 us RON mOhm BUK206 50Y
13. status resistors to limit the currents to a safe value 2 For normal continuous operation A higher T is allowed as an overload condition but at the threshold To the over temperature trip operates to protect the switch 3 Of the output Power MOS transistor July 1996 2 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y STATIC CHARACTERISTICS Tmo 25 C unless otherwise stated srweo paramere ___ GONDTIONS wn TWP max unr Clamping voltages Battery to ground 50 55 65 Battery to load 50 55 65 Negative load to ground 12 17 21 Supply voltage battery to ground Voe Operating range 5 40 V Currents Vee 13 V Nominal load current Ver 0 5 V Trp 85 C Quiescent current Ve 0V Vie 0V Operating current Ve 5V l 0A Off state load current Va 13 V Ve 0 V Resistances On state resistance Vse 13 V l 10 A t 300 us On state resistance Vse 5 V l 2 A t 300 us Internal ground resistance la 10 mA INPUT CHARACTERISTICS Tm 25 C Veo 13 V SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Input current Vig OV 35 60 100 Input clamping voltage I 200 uA 6 7 5 8 5 Input turn on threshold voltage 2 1 2 7 Vic oFF Input turn off threshold voltage 1 5 2 s 1 On state resistance is increased if the supply voltage is less than 9 V Refer to figure 8 2 Defined as in ISO 10483 1 3 This is the contin
14. uous current drawn from the supply when the input is low and includes leakage current to the load 4 This is the continuous current drawn from the supply with no load connected but with the input high 5 The measured current is in the load pin only 6 The supply and input voltage for the Roy tests are continuous The specified pulse duration t refers only to the applied load current July 1996 3 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch BUK206 50Y SMD version of BUK202 50Y PROTECTION FUNCTIONS AND STATUS INDICATIONS Truth table for normal open circuit load and overload conditions and abnormal supply voltages FUNCTIONS Rumas THRESHOLD _ SYMBOL CONDITION INPUT satus OUTPUT min TVP MAX UNIT Nomaton state tT ot Tt e S d o Nomatoftstate of id e f f T Too hoa Open creutioat 1 o 1 frso 450 750 ma fOvencreuticad of if eoe f TT Tua Overtemperaure 1 o o fiojis f e o orema f f f e oo Vano Shororowtioa 1 o o o fos 2 v Sonno of 1f oef T Veer lowsuppyyvotage x 1 oe 4 Vun Honsuppyvonao x 1 ao as so v For input 0 equals low 1 equals high X equals don t care For status 0 equals low 1 equals open or high For output switch 0 equals off 1 equals on STATUS CHARACTERISTICS Tmo 25 C The status output is an open drain transistor
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PHILIPS BUK206 50Y handbook(1)