PHILIPS BUK201-50Y handbook
Contents
1. 60 20 20 60 100 140 180 Tmb C Fig 9 Typical on state resistance t 300 us Hoy f T parameter Vgc condition 1 5 A Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201 50Y CLAMP OPERATING VIG 3V GH VOLTAGE QUIESCENT VIG 0V 0 10 20 30 40 50 60 VBG V Fig 10 Typical supply characteristics 25 C la f Vgg parameter Vig BUK201 50Y 60 20 60 100 140 180 Tj C Fig 11 Typical operating supply current I f T parameter Vac condition Vig 5 V BUK201 50Y 10 nA 60 20 20 60 100 140 180 Tj C Fig 12 Typical supply quiescent current ls f T condition Va 13 V Vig O V Vig OV July 1996 Product specification BUK201 50Y BUK201 50Y 60 20 20 60 100 140 180 Tj c Fig 13 Typical off state leakage current f T conditions Vz 13 V Vsa Vig 0 V BUK201 50Y2. PINNING SOT263 PIN CONFIGURATION SYMBOL DESCRIPTION Ground eas Seen Input Battery ve supply n Status leadform 263 01 Load connected to pin 3 July 1996 1 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS Battery voltages Veo Continuous off state supply voltage Reverse battery voltages External resistors Repetitive peak supply voltage R Rg 2 4 7 KQ 6 0 1 Continuous reverse supply voltage R Rg 2 4 7 KQ Continuous load current Tw 115 C Total power dissipation Tm 25 C Storage temperature Continuous junction temperature Lead temperature during soldering Input and status Continuous input current Continuous status current Repetitive peak input current Repetitive peak status current Inductive load clamping Non repetitive clamping energy ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS Vo Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN Thermal resistance Fin jmb Junction to mounting base 1 2 Rin j a Junction to ambient in free air 60 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents
3. 2 4 6 8 VIG V Fig 14 Typical input characteristics T 25 C I Vig parameter Vag BUK201 50Y 10 20 30 40 VBG V Fig 15 Typical input current T 25 C I f Vag condition Vig 5 V Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201 50Y 20 60 100 140 180 Ti C Fig 16 Typical input threshold voltages Vig f T conditions Vsa 13 V 80 mA BUK201 50Y 60 20 20 60 100 140 180 Tj C Fig 17 Typical input clamping voltage Vig f T conditions 200 uA Vag 13V BUK201 50Y 2 4 6 8 10 VSG V Fig 18 Typical status characteristic T 25 C ls f Vsg conditions Vig Vag 0 V July 1996 Product specification BUK201 50Y BUK201 50Y 10 nA 60 20 20 60 100 140 180 Tj C Fig 19 Typical status leakage current ls f T conditions Vs 5 V Vig Veg 0 V BUK201 50Y VSG V
4. Fig 20 Typical status low characteristic T 25 C Is f V3g conditions Ve 5 V Vas 13 V I 0 BUK201 50Y 20 60 100 140 180 Tj C Fig 21 Typical status low voltage Vsa f T conditions ls 50 uA Ve 5 V Vag 13V 11 20A Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201 50Y 60 20 20 60 100 140 180 T C Fig 22 Typical status clamping voltage Vse f T parameter V4 conditions la 100 uA Vag 13 V BUK201 50Y 50 100 150 200 Tmb C Fig 23 Low load current detection threshold loc f T conditions Vig 5 V Vag 13V BUK201 50Y 20 60 100 140 180 Tj C Fig 24 Supply typical undervoltage thresholds Vaacroj f T conditions Vig 3 V I 80 mA July 1996 Product specification BUK201 50Y BUK201 50Y 60 20 60 100 140 180 Tj C Fig 25 Supply typical overvoltage thresholds Vaaa p f T conditions Vig 5 V 80 mA BUK201 50Y 60 20 20 60 100 140 180 Tj C Fig 26 Typical battery to ground
5. BUK201 50YT Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER overload protected power switch based on MOSFET technology in a I Nominal load current ISO 5 pin plastic envelope configured as a single high side switch SYMBOL PARAMETER APPLICATIONS Continuous off state supply voltage General controller for driving Continuous load current lamps motors solenoids heaters Continuous junction temperature On state resistance FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS switch Low on state resistance 5 V logic compatible input Overtemperature protection self resets with hysteresis STATUS d e Overload protection against short circuit load with POWER output current limiting MOSFET latched reset by input INPUT CONTROL amp High ly voltage load gn supply vortag protection e Supply undervoltage lock out PROTECTION e Status indication for overload CIRCUITS protection activated e Diagnostic status indication of open circuit load e Very low quiescent current Vollaae clamping for turn off of GROUND inductive loads e ESD protection on all pins e Reverse battery and overvoltage protection Fig 1 Elements of the TOPFET HSS with internal ground resistor
6. PowerMOS transistor BUK201 50Y TOPFET high side switch MECHANICAL DATA Dimensions in mm Net Mass 2g mounting base 3 5 max not tinned X a positional accuracy of the terminals is controlled in this zone only terminal dimensions in this zone are uncontrolled Fig 38 SOT263 leadform 263 01 pin 3 connected to mounting base Note 1 Refer to mounting instructions for TO220 envelopes 2 Epoxy meets UL94 VO at 1 8 July 1996 12 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for
7. V VBL V Fig 30 Typical reverse battery characteristic Fig 33 Typical overload characteristic T 25 C Ig f Vag conditions 0 A T 25 C f Vg condition Vas 13 V parameter t July 1996 10 Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201 50Y 0 50 0 50 100 150 200 Tmb C Fig 34 Typical overload current Va 9 V I f T m conditions Va 13 V t 300 us BUK201 50Y 10 20 30 40 VBG V Fig 35 Typical short circuit load ER ARUA atro f Vgg condition T 2 July 1996 Product specification BUK201 50Y BUK201 50Y ENSHEEESS S 60 20 20 60 100 140 180 Tmb C Fig 36 Typical short circuit load threshold voltage BLT f T m condition Vsa 13 Zih j mb K W BUK201 50Y f tremp arrap sr rare 100n tu 10u 100u 1m 10m 100m 1 Is Fig 37 Transient thermal impedance Zin imp F t parameter D t T Rev 1 000 Philips Semiconductors Product specification
8. extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale July 1996 13 Rev 1 000
9. pull up circuit to indicate a logic high spot rarawewen__foowomons__ Twn T rve wax ur Status clamping voltage la 100 uA Ve 20V Status low voltage ls 50 WA Veg 13 V Vg 2 5 V 0 7 Status leakage current Vse 25V E 1 Status saturation current Vss 5 V Rs 0 Q Vag 18 V Application information External pull up resistor Vss 5 V 100 KQ 1 In the on state the switch detects whether the load current is less than the quoted open load threshold current This is for status indication only Typical hysteresis equals 140 mA The thresholds are specified for supply voltage within the normal working range 2 After cooling below ne reset temperature the switch will resume normal operation The reset temperature is lower than the trip temperature by typically 10 C 3 If the overtemperature protection has operated status remains low to indicate the overtemperature condition even if the input is taken low providing the device has not cooled below the reset temperature 4 After short circuit protection has operated the input voltage must be toggled low for the switch to resume normal operation 5 Undervoltage sensor causes the device to switch off Typical hysteresis equals 0 7 V 6 Overvoltage sensor causes the device to switch off to protect the load Typical hysteresis equals 1 3 V 7 In a fault condition with the pull up resistor short circuited while the status transistor is conducting 8 The pull up resistor also protects
10. the input is low and includes leakage current to the load 4 This is the continuous current drawn from the battery with no load connected but with the input high 5 The measured current is in the load pin only 6 The supply and input voltage for the Roy tests are continuous The specified pulse duration t refers only to the applied load current July 1996 3 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch PROTECTION FUNCTIONS AND STATUS INDICATIONS Truth table for normal open circuit load and overload conditions and abnormal supply voltages FUNCTIONS TRurHTABLE THRESHOLD SYMBOL CONDITION INPUT status oureur min rre wax UNIT Nmeonsae o2 o 31 9 o Nomatoftstate o o hoo Open circuiti 1 o 1 00 980 900 ma fOvencreuticad o if eoe o fOvrtmpesue 1 o o Qu ws f e o orema 000 o o BRUNNEN Vemm fShotemuten 1 o o 9 fos g v meme o t o Veer lowsuppyyvotage x 1 o 3 645 Ven Honsuppyvonao x 1 o j ao as so v For input 0 equals low 1 equals high X equals don t care For status 0 equals low 1 equals open or high For output switch 0 equals off 1 equals on STATUS CHARACTERISTICS Ta 25 C The status output is an open drain transistor and requires an external
11. the status pin during reverse battery conditions July 1996 4 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch DYNAMIC CHARACTERISTICS Tm 25 C Vee 13 V svmeoL paramere Jconomons mmn WP max uwr Inductive load turn off Vig Negative load voltage Vig 0 V IL 7 5 A t 300 us 15 20 25 V Short circuit load protection V 5 V R lt 10 mo Response time Load current prior to turn off t lt ty sc SWITCHING CHARACTERISTICS Tm 25 C Vag 13 V for resistive load R 13 Q SYMBOL PARAMETER cowpmoms min rvp MAX UNIT During turn on to V 25V Delay time to 1096 V 16 us Rate of rise of load voltage 1 2 5 V us Total switching time to 9096 V 40 us During turn off to Vig 0 Lion Delay time to 9096 V 30 us dV dt Rate of fall of load voltage 1 2 25 Vus tor Total switching time to 10 V 50 us CAPACITANCES Tmo 25 C f 1 MHz Vig 0V syueot paraweren Teowommons Tan max TunT Input capacitance 20 x Output capacitance 415 Status capacitance 15 1 For a high side switch the load pin voltage goes negative with respect to ground during the turn off of an inductive load This negative voltage is clamped by the device 2 The load current is self limited during the response time for short circuit load protection Response time is measured from when input goes high 3 If the load r
12. clamping voltage Vag f T parameter I BUK201 50Y 0 25 20 15 10 5 0 VLG V Fig 27 Typical negative load clamping characteristic I f V conditions Vig 0 V t 300 us 25 C Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201 50Y 60 20 20 60 100 140 180 Ti C Fig 28 Typical negative load clamping voltage Vig f T parameter l condition Vig 0 V Product specification BUK201 50Y BUK201 50Y Fig 31 Typical reverse diode characteristic I f Vg conditions V 0 V T 25 C BUK201 50Y BUK201 50Y 100 pF 60 20 20 60 100 140 180 0 10 20 30 40 50 Tj C VBL V Fig 29 Typical battery to load clamping voltage Fig 32 Typical output capacitance T 25 C Va f T parameter I condition I 5 mA C f Vg conditions f 2 1 MHz Vig 0V BUK201 50Y BUK201 50Y VBL TO typ current limiting i e before short circuit load trip 1 20 15 10 5 0 5 10 15 20 25 VBG
13. esistance is low but not a complete short circuit such that the on state voltage remains less than Vg o the device remains in current limiting until the overtemperature protection operates July 1996 5 Rev 1 000 Philips Semiconductors PowerMOS transistor TOPFET high side switch TOPFET HSS G IG Y Fig 4 High side switch measurements schematic current and voltage conventions Normalised Power Derating 0 Fig 5 Normalised limiting power dissipation Pp 100 PyP 25 C f T np BUK201 50Y 0 0 50 100 150 Tmb C Fig 6 Limiting continuous on state load current f Tmp conditions Vig 5 V Vag 13V July 1996 Product specification BUK201 50Y BUK201 50Y VBG V 13 0 0 5 1 1 5 2 VBL V Fig 7 Typical on state characteristics T 25 C J I f Va parameter Vac t 250 us RON mOhm BUK201 50Y 10 100 VBG V Fig 8 Typical on state resistance T 25 C Hoy f Vag conditions 7 5 A t 300 us RON mOhm BUK201 50Y
14. to a safe value 2 For normal continuous operation A higher T is allowed as an overload condition but at the threshold To the over temperature trip operates to protect the switch 3 Of the output Power MOS transistor July 1996 2 Rev 1 000 Philips Semiconductors Product specification PowerMOS transistor BUK201 50Y TOPFET high side switch STATIC CHARACTERISTICS Tmo 25 C unless otherwise stated swwmoL paramere CONDITIONS J mn TWP max uwr Clamping voltages Battery to ground 50 55 65 Battery to load 50 55 65 Negative load to ground 12 17 21 Supply voltage battery to ground Maa Operating range 5 40 V Currents Vee 13 V Nominal load current Va 0 5 V Trp 85 C Quiescent current Vs 20V Vig 20V Operating current Va 25V l 20A Off state load current Vg 13 V Vs 20V Resistances On state resistance Vse 13 Vil 7 5 A t 300 us On state resistance Veg 5 Vil 1 5 A t 300 us Internal ground resistance la 10 mA INPUT CHARACTERISTICS Tm 25 C Veo 13 V SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Input current Vig 25V 35 60 100 Input clamping voltage I 200 uA 6 7 5 8 5 Input turn on threshold voltage 2 1 2 7 Vic oFF Input turn off threshold voltage 1 5 2 s 1 On state resistance is increased if the supply voltage is less than 9 V Refer to figure 8 2 Defined as in ISO 10483 1 3 This is the continuous current drawn from the battery when
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PHILIPS BUK201 50Y handbook buk213-50y