PHILIPS BUK1M200-50SDLD handbook
Contents
1. 20 a 100 0 50 0 50 100 150 T C 1 Vig 5 V device in latched mode 2 Vig 3 V device in latched mode 3 Vig 5 V device in normal mode 4 Vis 4 V device in normal mode Fig 13 Input source current as a function of junction temperature typical values 03pa81 2000 1000 0 5 5 11 16 5 22 Vis 2 4 V TS 125 C Fig 14 Reciprocal of short circuit response time as a function of total overload power single device dissipating typical values 03pa82 2 4 Vis rst V 2 2 1 8 50 20 90 Tj C 160 tr 100 us Fig 15 Input source reset voltage as a function of junction temperature typical values 03pa83 400 ID mA 300 200 100 57 59 61 63 65 67 Vis 0 V tp 300 us Fig 16 Overvoltage clamping characteristic drain current as a function of drain source voltage typical values 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 9 of 14 Philips Semiconductors BUK1M200 50SDLD Quad channel TOPFET 10 5 03pa84 Ipss A 106 10 72. MBL801 Fig 2 Symbol Quad channel low side TOPFETTM 2 1 Pin description Table 2 Pin description Symbol Pin Description n c 1 11 10 20 not connected D1 2 19 drain 1 l1 3 input 1 D2 4 17 drain 2 12 5 input 2 D3 6 15 drain 3 13 7 input 3 D4 8 13 drain 4 14 9 input 4 S4 12 source 4 3 14 source 3 S2 16 source 2 S1 18 source 1 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 2 of 14 Philips Semiconductors BUK1M200 50SDLD 3 Block diagram Quad channel TOPFET D1 CHANNEL 1 l1 S1 VOLTAGE CONTROL REGULATOR LOGIC CHANNEL 2 D2 2 internal circuitry identical to 2 CHANNEL1 S CHANNEL 3 D3 13 internal circuitry identical to CHANNEL1 S3 CHANNEL 4 D4 14 internal circuitry i ical t identical to s4 BUK1M200 50SDLD CHANNEL1 Fig 3 Elements of the quad channel TOPFET switch 03pb05 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 3 of 14 Philips Semiconductors BUK1M200 50SDLD 4 Limiting values Table 3 Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 Quad channel TOPFET Vos drain source voltage Mo 50 V
3. l input current clamping 5 3 mA Piot total power dissipation Tsp lt 25 C Figure 4 B oog 9 4 Ww lims non repetitive peak input current tp lt 1ms 10 mA Tstg storage temperature 55 150 C Tj junction temperature normal operation BIO 150 C Overvoltage clamping l Eps ciys non repetitive drain source Tamb 25 C Ipm lt Ipgim refer to Table 5 Pl 100 mJ clamping energy inductive load Epscijr repetitive drain source clamping Tsp lt 125 C Ipm 50 mA f 250 Hz 5 5 mJ energy Overload protection 6 Vpsiprot p protected drain source voltage Vis24V 35 V Reverse diode Is source diode forward current Tsp lt 25 C Vis O V 2 A Electrostatic discharge Vesd electrostatic discharge voltage C 250 pF R 1 5 KQ 2 kV 1 Prior to the onset of overvoltage clamping For voltages above this value safe operation is limited by the overvoltage clamping energy 2 For all devices active 3 Not in an overload condition with drain current limiting 4 Ata drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients 5 Single active device 6 With the protection supply provided via the input pin the TOPFET is protected from short circuit loads Overload protection operates by means of drain current limiting and by activating the overtemperature protection 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved P
4. 0 mA Figure 5 and 6 Tsp 25 C 150 200 mQ Input characteristics 1 Vis th input source threshold voltage Vps 5 V Ip 1 MA 0 6 2 4 V Tsp 25 C Figure 10 1 1 1 6 2 1 V lis input source current normal operation Vis 5 V 100 220 400 uA Vis 4V 80 195 330 uA protection latched Vis 5V 200 400 650 uA Vis 3 V Figure 11 and 12 130 250 430 uA Visyrst input source reset voltage trst 2 100 us Figure 15 2 15 2 2 9 V trst latch latch reset time Bl 10 40 100 us Vis CL input source clamping voltage I 1 5 mA Figure 16 5 5 8 5 V Ric input gate resistance BIO 33 kQ Overload protection characteristic 4 ID im drain current limiting Vis 5 V Figure 18 0 8 1 3 1 7 A Vis 4 5 V O7 A 4V lt Vis lt 5 5 V 0 6 3 1 8 A Short circuit load protection characteristics Povh overload power threshold Vis 5 V 5 17 Ww Ta sc short circuit response time Vis 5 V Figure 14 ie 1 6 ms Overtemperature protection characteristic Tin threshold junction temperature 4 V lt Vis lt 5 5 V In 2 280 mA or 150 165 C Vps 100 mV Figure 9 Source drain diode characteristic Vsp source drain diode forward ls 2 A Vig 0 V tp 300 us 0 83 1 1 V voltage 1 The supply for the logic and overload protection is taken from the input 2 The input voltage below which the overload protection circuits will be reset 3 Not directly measurable from the device terminals 9397 750 10956 Koninklijke Philips Electron
5. 108 50 0 50 100 Tj CC 150 Vps 40 V Vis 0 V Fig 17 Drain source leakage current as a function of junction temperature typical values 03pa72 1 8 p 0 40 80 120 160 Tsp C Vis 5V Fig 18 Drain current limiting as a function of solder point temperature 7 Dynamic characteristics Table 6 Switching characteristics Turn on measured from the input going HIGH ta on turn on delay time tr rise time ta oft turn off delay time tr fall time R 50 Q Ip 250 mA Vis 5 V 5 12 us Figure 19 and 20 Tsp 25 C 14 35 us RL gt Vos MBL853 Fig 19 Test circuit for resistive load switching times 90 Vis 10 MBL854 Fig 20 Resistive load switching waveforms 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 10 of 14 BUK1M200 50SDLD Philips Semiconductors Quad channel TOPFET 8 Package outline SO20 plastic small outline package 20 leads body width 7 5 mm SOT163 1 ma L detail X 5 scale DIMENSIONS inch dimensions are derived from the original
6. O0 BUK1M200_ 50SDLDQ O 0 BUK1M200 50SDLD Quad channel TOPFET Rev 01 02 April 2003 Product data 1 Product profile 1 1 1 2 1 3 1 4 Description Quad temperature and overload protected logic level power MOSFET in TOPFET technology in a 20 pin surface mount plastic package Product availability BUK1M200 50SDLD in SOT163 1 S020 Features B Power TrenchMOS B 5V logic compatible input level B Overtemperature protection E Current limiting B Overload protection E ESD protection for all pins B Input source voltage resets latched EB Overfatigue clamping for turn off of protection circuitry inductive loads B Input used to control output stage and B Low operating input current permits supply overload protection circuits direct drive by micro controller Applications B Low side driver m DC switching B Low frequency Pulse Width B General purpose switch for driving Modulation lamps motors solenoids and heaters Quick reference data Table 1 Quick reference data Rpson drain source on state resistance 200 mo Piot total power dissipation B lt 2 9 4 Ww Tj junction temperature 150 C Vps drain source voltage 50 V 1 All devices active PHILIPS Philips Semiconductors BUK1M200 50SDLD 2 Pinning information Quad channel TOPFET i E O 1 10 Top view MGX361 Fig 1 Pinning SOT163 1 S020
7. d Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or of 6 make belt intellectual property rights Date of release 02 April 2003 Document order number 9397 750 10956
8. eriods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 12 Disclaimers Life support These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors Contact information For additional information please visit http www semiconductors philips com For sales office addresses send e mail to sales addresses www semiconductors philips com 9397 750 10956 customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these product
9. eristics drain current as a function of input source voltage typical values 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 7 of 14 Philips Semiconductors BUK1M200 50SDLD Quad channel TOPFET 200 03pa76 Tj th C 190 180 170 160 Vis V Fig9 Overtemperature protection characteristic threshold junction temperature as a function of input source voltage typical values 03pa77 0 5 50 0 50 100 Tj C 150 Ip mA Vps 5 V Fig 10 Input source threshold voltage as a function of junction temperature 03pa78 0 6 0 4 0 2 Tj 25 C 1 Protection latched 2 Normal operation Fig 11 Input source current as a function of input source voltage typical values 03pa79 6 vgv 8 Tj 25 C Fig 12 Input clamping characteristic input current as a function of input source voltage typical values 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 8 of 14 Philips Semiconductors BUK1M200 50SDLD Quad channel TOPFET 03pa80
10. gn and supply the best possible product Ill Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification CPCN 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status 11 Definitions Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended p
11. ics N V 2003 All rights reserved Product data Rev 01 02 April 2003 6 of 14 Philips Semiconductors BUK1M200 50SDLD Quad channel TOPFET 4 The TOPFET switches off to protect itself when one of the overload thresholds is exceeded It remains latched off until reset by the input 5 Power threshold for protection to operate 6 To reset the latched state the input source voltage is reduced from 5 V to 1 V 7 Trip time trip varies with overload dissipation Poy according to the formula trip ta sc Pov Povith 1 03pa71 2 5 a 2 1 5 1 0 5 0 50 0 50 100 Tj C 150 A Rpson Rpson 25 C Fig 5 Normalized drain source on state resistance factor as a function of junction temperature 03pa73 500 par RDSon mo 375 250 125 Vis V Tj 25 C Ip 100 mA tp 300 us Fig 6 Drain source on state resistance as a function of input source voltage typical values 03pa74 1 6 l Vs 7V ID A 6V 1 2 BV 4V 0 8 0 4 0 0 10 20 30 Vps V Tj 25 C tp 300 us Fig 7 Output characteristics drain current as a function of drain source voltage typical values 03pa75 0 6 6 Vis Vv 8 Tj 25 C Vps 10 V tp 300 us Fig 8 Transfer charact
12. mm dimensions UNIT A2 Ag D Ee He 13 0 7 6 12 6 7 4 inches A zen Boe Note 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT163 1 075E04 MS 013 ET 4 s on Fig 21 SOT163 1 Koninklijke Philips Electronics N V 2003 All rights reserved 9397 750 10956 11 of 14 Product data Rev 01 02 April 2003 Philips Semiconductors BUK1 M200 50SDLD Quad channel TOPFET 9 Revision history Table 7 Revision history 01 20030402 Product datasheet 9397 750 10956 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 12 of 14 Philips Semiconductors BUK1M200 50SDLD 10 Data sheet status I Objective data Development Quad channel TOPFET This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Il Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the desi
13. roduct data Rev 01 02 April 2003 4 of 14 Philips Semiconductors BUK1 M200 50SDLD Quad channel TOPFET 120 03aa17 Pder 80 40 0 0 50 100 150 200 Tsp C P tot Pier 100 tot 25 C Fig 4 Normalized total power dissipation as a function of solder point temperature 5 Thermal characteristics Table 4 Thermal characteristics Rih sp thermal resistance from junction to mounted on thermo clad board solder point one device active 45 K W all devices active 5 z 13 3 KW 9397 750 10956 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 5 of 14 Philips Semiconductors BUK1 M200 50SDLD Quad channel TOPFET 6 Static characteristics Table 5 Static characteristics Limits are valid for 40 C lt Tsp lt 150 C and typical values for Tsp 25 C unless otherwise specified Off state output characteristics VpsicL _ drain source clamping voltage Vis 0 V Ip 10 mA 50 V Vis 0 V Ip 200 mA tp lt 300 us 50 62 70 V lt 0 01 Figure 16 Ipss drain source leakage current Vis 0 V Vps 40 V 100 HA Tsp 25 C Figure 17 0 05 10 uA On state output characteristic Rpson drain source on state resistance Vis 2 4 V tp lt 300 us lt 0 01 380 mQ Ip 10
14. s conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified 13 Trademarks TOPFET is a trademark of Koninklijke Philips Electronics N V TrenchMOS is a trademark of Koninklijke Philips Electronics N V Fax 31 40 27 24825 Koninklijke Philips Electronics N V 2003 All rights reserved Product data Rev 01 02 April 2003 13 of 14 Philips Semiconductors BUK1 M200 50SDLD Quad channel TOPFET Contents 1 Product profile eeen 1 1 1 Description 00 cece eee eee 1 1 2 Features oxo siete these Pid tet ee AE 1 1 3 Applications neen 1 1 4 Quick reference data 1 2 Pinning information 0000eeee 2 2 1 Pin description 00 00 e eee eee 2 3 Block diagram 0 cece eee eee 3 4 Limiting values 4 5 Thermal characteristics 5 6 Static characteristics 6 7 Dynamic characteristics 10 8 Package outline 0 00 eee eee e eee 11 9 Revision history eee 12 10 Data sheet statuS 0000 e ee ee eee 13 11 Definitions ieee ee eke ee ee 13 12 Disclaimers toiin ease deed 13 13 Trademarks 13 Koninklijke Philips Electronics N V 2003 PHILIPS Printed in The Netherlands All rights are reserve
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PHILIPS BUK1M200 50SDLD handbook