PHILIPS BUK116-50L/S handbook(1)
Contents
1. 2 4 6 8 VPS V Fig 23 Typical DC protection supply characteristics Ips f Vps normal or overload operation T 25 C ISL mA T T T VPS V 11 2 4 6 8 VIS V Fig 24 Typical latched input characteristics 25 C lis f V s after overload protection latched July 1996 Product specification BUK116 50L S BUK116 50L S 08 12 1 VSD V Fig 25 Typical reverse diode current T 25 C s f Vsps conditions Vs 0 V t 250 us EDSM 20 40 60 80 100 120 140 Tmb C Fig 26 Normalised limiting clamping energy Ensm f T mob conditions Ip 27 A V CL DSR TOPFET ID 100 WJ DUT p D Fig 27 Clamping energy test circuit Ris 100 Q Epsu 0 5 LI Vicrpse Vict sr 2 pp Rev 1 000 Philips Semiconductors Logic level TOPFET SMD version of BUK106 50L S VIS VDS V BUK116 50L S Time us Fig 28 Typical resistive load switching waveforms FR Rig 50 Q R 109 Von 15 V T 25 C2. 1 3 x4 i i Fig 34 SOT426 soldering pattern for surface mounting July 1996 12 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publish
3. 5 V ID f Vps parameter Vic t 250 us amp ty lt tase D amp IDM A BUK116 50L S BUK116 50 j T T f T T T VIS V 10 5 Overload protection characte gt s not shown wo gt ann ba o 7 N XN oy 7 10 us a 4 100 us S N aS 1ms 10 ms 100 ms l 10 100 0 1 2 VDS V VDS V Fig 6 Safe operating area T 25 C Fig 9 Typical on state characteristics T 25 C Ip amp lom f Vos low Single pulse parameter t Ip Vos parameter Vg t 250 us July 1996 7 Rev 1 000 Philips Semiconductors Logic level TOPFET SMD version of BUK106 50L S RDS ON mOhm BUK116 50L S 10 20 30 40 50 ID A Fig 10 Typical on state resistance T 25 C Roson f lp parameter Vic t 250 us BUK116 50L S 2 4 6 8 10 vIS V Fig 11 Typical transfer characteristics T 25 C lp f Vs conditions Vp 12 V t 250 us BUK116 50L S 0 20 40 120 140 160 F
4. TOPFET Phi li Fig 29 External input resistances R and Ris generator voltage V and input voltage Vs Capacitance pF BUK116 50L S 0 10 20 30 40 VDS V Fig 30 Typical capacitances Cis Coss Cras f Vps conditions Vig 0 V f 1 July 1996 Product specification BUK116 50L S 100 nA 0 20 40 60 80 120 140 T C Fig 31 Typical off state leakage current lose f T Conditions Vp 40 V Rig 100 Q Ips normalised to 25 C 0 5 60 20 20 60 100 140 180 T C Fig 32 Normalised protection supply current Ips Ipp25 C HT Ves Vesn Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S MECHANICAL DATA Dimensions in mm 10 3 MAX Net Mass 1 5 g 0 85 MAX x4 Fig 33 SOT426 mounting base connected to centre pin cropped short MOUNTING INSTRUCTIONS Dimensions in mm tae 17 lt 1 7 s FE
5. is connected to the protection supply via a pull up resistor It should not be left floating 2 Low pass filtering of the flag signal may be advisable to prevent false tripping July 1996 6 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S Normalised Power Derating Zth K W BUK116 50L S i to terange annie arram 1E 07 1E 05 1E 03 1E 01 1E 01 s Fig 4 Normalised limiting power dissipation Fig 7 Transient thermal impedance Pp 100 Pp Pp 25 C HT me Zin im F t parameter D t T 0 001 Normalised Current Derating BUK116 50L S 20 40 60 80 100 120 140 8 12 16 20 24 28 Tmb C VDS V Fig 5 Normalised continuous drain current Fig 8 Typical output characteristics T 25 C lo 100 Ip Ip 25 C I T m conditions Vis
6. ETER Vesn Protection supply voltage BUK116 50L BUK116 50S FUNCTIONAL BLOCK DIAGRAM PROTECTION SUPPLY FLAG POWER MOSFET LOGIC AND PROTECTION SOURCE Fig 1 Elements of the TOPFET PIN CONFIGURATION SYMBOL D TOPFET_ P AC HN F eae Xe Pi S Fig 3 1 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 Cc O O0 rrr lt lt lt lt lt Voltages Continuous off state drain source voltage Continuous input voltage Continuous flag voltage Continuous supply voltage Currents Continuous drain current Continuous drain current Repetitive peak on state drain current Thermal Total power dissipation Storage temperature Junction temperature continuous Lead temperature during soldering OVERLOAD PROTECTION LIMITING VALUES With the protection supply An n MOS transistor turns on For internal overload protection to connected TOPFET can protect between the input and source to remain latched while the control itself from two types of overload quickly discharge the power circuit is high external series input over tempera
7. LUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients Sreo panaweres ___ cowormions mm wax unit Repetitive peak clamping drain current Ris 100 Q Non oe inductive turn off lom 27 A Rig 100 Q energ Repetitive inductive turn off energy Ris 100 a k lt 85 C lm 16 A Vbp lt 20 V f 250 Hz Repetitive peak drain to input current Ris 0 Q t lt 1 ms REVERSE DIODE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN M Continuous forward current mb 20 C Vi Ve Vee 0 V THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN TYP max UNIT Thermal resistance Rin jmb Junction to mounting base 1 0 K W STATIC CHARACTERISTICS Tm 25 C unless otherwise specified Drain source clamping voltage R s 100 Q Ib 10 mA Drain source clamping voltage 585 100 Q Ipy 1 A t lt 300 us lt 0 01 Zero input voltage drain current Vpg 12 V Vs 0 V Drain source leakage current Vos 50 V Rig 100 Q Drain source leakage current Vos 40 v Ris 100 Q Tj 125 C Drain source on state lom 25 A Visg 8V resistance tp lt 300 us 6 lt 0 01 Vis 5V 1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to become sufficiently positive for active clamping Refer to INPUT CHARACTERISTICS 2 While the protection suppl
8. O0 0 BUK116 509 0 0 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a5 pin surface mounting plastic envelope intended as a general purpose switch for automotive systems and other applications APPLICATIONS General controller for driving e lamps e motors e solenoids e heaters FEATURES e Vertical power DMOS output stage e Low on state resistance e Logic and protection supply from separate pin e Low operating supply current e Overload protection against over temperature e Overload protection against short circuit load e Latched overload protection reset by protection supply e Protection circuit condition indicated by flag pin e 5V logic compatible input level e Separate input pin for higher frequency drive e ESD protection on input flag and protection supply pins e Over voltage clamping for turn off of inductive loads e Both linear and switching operation are possible PINNING SOT426 DESCRIPTION input flag connected to mb protection supply source drain July 1996 QUICK REFERENCE DATA SYMBOL PARAMETER Vos Continuous drain source voltage D Continuous drain current Prot Total power dissipation T Continuous junction temperature Rosin Drain source on state resistance Vis 5 V Vs 8V SYMBOL PARAM
9. er for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale July 1996 13 Rev 1 000
10. ig 12 Typical transconductance T 25 C gr f lp conditions Vps 12 V t 250 us July 1996 Product specification BUK116 50L S Normalised RDS ON Tj 0 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 13 Normalised drain source on state resistance a Roson Rosyomed C I T Ip 25 A Vis2 5 V BUK116 50L 230 UK116 50L S 220 210 200 190 BUK116 50S 180 170 160 150 0 2 VPS V Fig 14 Typical over temperature protection threshold To Vps conditions Vps gt 0 1 V PDSM 20 40 60 80 100 120 140 Tmb C Fig 15 Normalised limiting overload dissipation Posu 100 Ppsw Posm 25 C f T me Rev 1 000 Philips Semiconductors Logic level TOPFET SMD version of BUK106 50L S BUK116 50L S 0 2 4 6 8 10 VIS V Fig 16 Maximum drain source Suey voltages for SC load protection Voppip Vis Tm lt 150 C VPSP V BUK116 50L S min BUK116 50S 16 50L 4 6 8 10 VIS V Fig 17 Minimum Pre on seo Noe for SC load protection Vpsp f Vis T
11. mo 10 tdsc ms BUK116 50L S 0 01 0 1 1 10 PD kW Fig 18 Typical overload protection characteristics dsc 7 f Pps conditions Vps 2 gt Vpsp Vis gt 5 V July 1996 Product specification BUK116 50L S 5 Energy amp Time BUK116 50L S Energy J 20 60 100 220 Tmb C Fig 19 Typical overload pore characteristics Conditions Vpp 13 V Vps Vesy Vis 8 V SC load BUK116 50L S BUK116 50L 2 4 6 VPS V Fig 20 Typical overload protection energy T 25 C Esco Ves conditions Vps 13 V parameter Vis BUK116 50L S 50 70 Fig 21 Typical clamping characteristics 25 C Ip f Vpg conditions Ris 100 Q t lt 50 us Rev 1 000 Philips Semiconductors Logic level TOPFET SMD version of BUK106 50L S VIS TO V pa ae 40 20 0 20 40 60 80 100 120 140 Tj C Fig 22 Input threshold voltage Visto f T conditions Ip 1 MA Vos 5 V IPS mA BUK116 50L S
12. p 25 C unless otherwise specified Protection supply Protection supply current normal operation or protection latched BUK116 50L BUK116 50S Protection reset voltage T 150 C Protection clamp voltage lp 1 35 mA REVERSE DIODE CHARACTERISTICS Te 25 C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Vsps Forward voltage Is 20 A Vis Vps Veg 0 V 1 2 V t 300 us 1 The short circuit load protection is able to save the device providing the instantaneous on state dissipation is less than the limiting value for Ppsm which is always the case when Vps is less than Vpsp maximum 2 At the appropriate nominal protection supply voltage for each type Refer to QUICK REFERENCE DATA 3 The over temperature protection feature requires a minimum on state drain source voltage for correct operation The specified minimum lp ensures this condition 4 During overload condition Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS 5 The supply voltage below which the overload protection circuits will be reset 6 The reverse diode of this type is not intended for applications requiring fast reverse recovery July 1996 4 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S INPUT CHARACTERISTICS Tm 25 C unless otherwise specified Normal operation Input threshold voltage Vos 5 V lp 1mA Tmo 150 C Input current Vi
13. s 10V Input clamp voltage l 1mA 1 0 0 5 11 Overload protection latched Input resistance Vps C C 100 1 2 Application information External input resistances for see figure 29 internal overvoltage clamping R Q Vbs gt 30 V internal overload protection Ris Q V 5V Vi 10V SWITCHING CHARACTERISTICS Tmo 25 C R 50 Q Rig 50 Q see figure 29 resistive load R 10 Q For waveforms see figure 28 swmpor panaweren eonomons Twn rve max JUNT Vo 15ViVeovarov 10 rs ed see ser less Tease Von tsViVgiovaov 80 rs ee ee CAPACITANCES Tmo 25 C f 1 MHz SYMBOL PARAMETER CONDITIONS MIN TVP MAX UNIT Input capacitance Vos 25 V Vis OV Output capacitance Vbs 25 V Vs 0 V Reverse transfer capacitance Vbs 25 V Vs 0 V Protection supply pin Vps 10 V capacitance Flag pin capacitance Vgs 10 V Vps 0 V 1 The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates The external drive circuit should be such that the input voltage does not exceed Viso minimum when the overload protection has operated Refer also to figure for latched input characteristics 2 Applications using a lower value for Rj would require external overvoltage protection 3 For applications requiring a lower value for R an external overload protection strategy is possible using
14. the flag pin to tell the control circuit to switch off the input July 1996 5 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S FLAG DESCRIPTION TRUTH TABLE The flag pin provides a means to CONDITION DESCRIPTION FLAG detect the presence of the eS protection supply and indicate the NORMAL Normal operation and adequate LOGIC LOW state of the overload detectors protection supply voltage The flag is the open drain of an n MOS transistor and requires an OVER TEMP Over temperature detected LOGIC HIGH external pull up resistor It is suitable for both 5 V and 10 V logic SO Flag may be used to implement an SHORT CIRCUIT Overload condition detected LOGIC HIGH external protection strategy for applications which require low input _ qo c isy_ drive impedance SUPPLY FAULT Inadequate protection supply LOGIC HIGH voltage FLAG CHARACTERISTICS Tmo 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS Flag low normal operation Ves Flag voltage l 1 6 mA less Flag saturation current Vig 10 V Flag high overload or fault Flag leakage current Protection supply threshold voltage BUK116 50L BUK116 50S Flag clamping voltage l 1 mA Vps 0 V Application information Suitable external pull up resistance 1 Even if the flag pin is not used it is recommended that it
15. ture and short circuit MOSFET gate capacitance resistance must be provided Refer load to INPUT CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vs e 5 vy Vpsp Protection supply voltage for valid protection BUK116 50L BUK116 50S Over temperature protection Vps Vpsn Voppct Protected drain source supply voltage Vis 10 V R 2 kQ Vis 5 V3 R 1 kQ Short circuit load protection Vps Vpsn L lt 10 uH VbpP P Protected drain source supply voltage Vis 10 V R 22 kQ Vs 5V R21kQ Posm Instantaneous overload dissipation ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS Vo Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ 1 Prior to the onset of overvoltage clamping For voltages above this value safe operation is limited by the overvoltage clamping energy 2 A higher T is allowed as an overload condition but at the threshold T 7o the over temperature trip operates to protect the switch 3 The minimum supply voltage required for correct operation of the overload protection circuits 4 The device is able to self protect against a short circuit load providing the drain source supply voltage does not exceed Vppp p Maximum For further information refer to OVERLOAD PROTECTION CHARACTERISTICS July 1996 2 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S OVERVOLTAGE CLAMPING LIMITING VA
16. y voltage is connected during overvoltage clamping it is possible that the overload protection may operate at energies close to the limiting value Refer to OVERLOAD PROTECTION CHARACTERISTICS 3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source voltage becoming positive July 1996 3 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET BUK116 50L S SMD version of BUK106 50L S OVERLOAD PROTECTION CHARACTERISTICS With adequate protection supply Provided there is adequate input Refer also to OVERLOAD voltage TOPFET detects when one series resistance it switches off PROTECTION LIMITING VALUES of the overload thresholds is and remains latched off until reset and INPUT CHARACTERISTICS exceeded by the protection supply pin SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Short circuit load protection Ves Vesn Tmo 25 C L lt 10 uH Eps To Overload threshold energy Vbo 13 V Vis 10 V 550 mJ tafe Response time Vbo 13 V Vis 10 V 0 4 ms Over temperature protection Vps Vpsy Tito Threshold junction temperature from gt 2 5 A 150 C TRANSFER CHARACTERISTICS Tmo 25 C Sreo paraweren Teowommons Twn rv max ut Forward transconductance se a 12 V lbw 25 At lt 300 us lt 0 0 Drain current Vos 13 V Vig 5 V Vis 10 V PROTECTION SUPPLY CHARACTERISTICS Tm
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PHILIPS BUK116 50L/S handbook(1)