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PHILIPS BUK456-800A/B handbook

1. 0 20 40 0 1 QG nC VSDS V Fig 13 Typical turn on gate charge characteristics Fig 14 Typical reverse diode current Vos Q conditions 4 A parameter Vps l f Vsps conditions Vg 0 V parameter T May 1995 5 Rev 1 200 Philips Semiconductors PowerMOS transistor MECHANICAL DATA Dimensions in mm Net Mass 2 g Product Specification BUK456 800A B 3 0 max not tinned d 1 3 max 11 2x a lt 2 54 2 54 0 9 max 3x Fig 15 TO220AB pin 2 connected to mounting base Notes 1 Observe the general handling precautions for electrostatic discharge sensitive devices ESDs to prevent damage to MOS gate oxide 2 Refer to mounting instructions for TO220 envelopes 3 Epoxy meets UL94 VO at 1 8 May 1995 Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK456 800A B DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance
2. 6 8 VGS V Fig 7 Typical ae characteristics f Vgs conditions V ps 25 V parameter T 0 2 4 6 ID A Fig 8 Bae transconductance T 2 f I conditions Vps 5 a Normalised RDS ON f Tj 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 9 Normalised drain source on state resistance a Roson Rosionzs co f T Ip 1 5 A Vas 10 V May 1995 Product Specification BUK456 800A B VGS TO V u 60 40 20 0 20 40 60 80 100 120 140 Tj C Fig 10 Gate threshold voltage Vasto f T conditions Ip 1 MA Vps Ves SUB THRESHOLD CONDUCTION 0 1 2 3 4 VGS V A 11 Sub threshold drain vials f Vgs conditions T 25 J Vos Vas 20 40 VDS V Ss 12 Typical capacitances Cs Cos Cros f Vps conditions Veg 0 V f 1 MHz Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK456 800A B
3. May 1995 7 Rev 1 200
4. 1 25 C Zero gate voltage drain current 00 1 125 C Gate source leakage current gt Vos Drain source on state 0 V BUK456 800A resistance f BUK456 800B DYNAMIC CHARACTERISTICS Tmo 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Min TY oe Forward transconductance Vos 25 V lp 1 5 A 3 0 Cis Input capacitance Output capacitance Feedback capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Internal drain inductance Measured from contact screw on tab to centre of die Internal drain inductance Measured from drain lead 6 mm from package to centre of die Internal source inductance Measured from source lead 6 mm from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmp 25 C unless otherwise specified Continuous reverse drain current l Pulsed reverse drain current Diode forward voltage ty Reverse recovery time l 4 0 A dl dt 100 A us Qy Reverse recovery charge Ves 0 V Va 100 V May 1995 2 Rev 1 200 Philips Semiconductors PowerMOS transistor Normalised Power Derating Fig 1 Normalised power dissipation PD 100 P P 25 c f T mp Normalised Current Derating 20 40 60 80 100 120 140 Tmb C Fig 2 Normalised contin
5. O0 O0 BUK 456 380040 0 O Philips Semiconductors Product Specification PowerMOS transistor BUK456 800A B GENERAL DESCRIPTION QUICK REFERENCE DATA N channel enhancement mode SYMBOL PARAMETER field effect power transistor in a a plastic envelope BUK456 The device is intended for use in Drain source voltage Switched Mode Power Supplies Drain current DC SMPS motor control welding Total power dissipation DC DC and AC DC converters and Drain source on state in general purpose switching resistance applications PINNING TO220AB PIN CONFIGURATION SYMBOL DESCRIPTION gate drain source drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 Drain source voltage Drain gate voltage Gate source voltage lt lt lt Drain current DC Drain current DC Drain current pulse peak value Total power dissipation Storage temperature Junction Temperature oog PPD SYMBOL PARAMETER CONDITIONS MIN TYP max UNIT Thermal resistance junction to 1 0 K W mounting base Thermal resistance junction to K W ambient May 1995 1 Rev 1 200 Philips Semiconductors Product Specification PowerMOS transistor BUK456 800A B STATIC CHARACTERISTICS Tm 25 C unless otherwise specified sywsot panaweren ___ eowomions um ma vr Drain source breakdown Ves 0 V Ip 0 25 mA voltage Gate threshold voltage Zero gate voltage drain current
6. uous drain current ID 100 1 Ip 25 c F T m Conditions Veg 10 V to 10 us 100 us 1 ms 10 ms 100 ms 1000 VDS V Fig 3 Safe operating area T 25 C Ip amp lom f Vos low single pulse parameter t May 1995 Product Specification BUK456 800A B Zth j mb K W H b ronm pp ernn 1E 05 1E 03 16 01 1E 01 t s Fig 4 Transient thermal impedance Zn imb f t parameter D ty T 8 12 16 20 24 28 VDS V Fig 5 Typical output characteristics T 25 C Ip f Vps parameter Vos 5 RDS ON Ohm 4 2 2 4 6 ID A Fig 6 Typical on state resistance T 25 C Fosion f Ip parameter Vag Rev 1 200 Philips Semiconductors PowerMOS transistor 0 2
7. with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1996 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale

PHILIPS BUK456-800A/B handbook

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