PHILIPS PMLL4148; PMLL4446; PMLL4448 handbook
Contents
1. Based on square wave currents Tj 25 C prior to surge MBG451 MBG464 300 600 Ir lF mA mA y 200 400 1 7 2 3 7 t 100 200 7 1 7 7 7 0 0 ale 0 100 Tamb C 200 0 1 Ve V 2 1 Tj 175 C typical values Device mounted on an FR4 printed circuit board 2 Tj 25 C typical values 3 Tj 25 C maximum values Fig 2 Maximum permissible continuous forward current as a function of ambient Fig 3 Forward current as a function of forward temperature voltage MBG704 10 lFSM A 10 1 107 1 10 10 108 104 Fig 4 Maximum permissible non repetitive peak forward current as a function of pulse duration 1996 Sep 18 Philips Semiconductors Product specification High speed diodes PMLL4148 PMLL4446 PMLL4448 MGD006 103 i MGD004 R uA Ca 10 pF 1 0 1 2 3 10 0 8 1 0 6 1071 107 0 4 0 100 200 Tj C 0 102. VR V 20 1 VR 75 V maximum values 2 Vr 75 V typical values 3 Vpr 20 V typical values f 1 MHz Tj 25 C Fig 5 Reverse current as a function of junction Fig 6 Diode capacitance as a function of reverse temperature voltage typical values 1996 Sep 18 5 Philips Semiconductors High speed diodes Product specification PMLL4148 PMLL4446 PMLL4448 SAMPLING OSCILLOSCOPE R 50 Q MGA881 1 IR 1 mA tif trr j t 90 4 input signal output signal Fig 7 Reverse recovery voltage test circuit and waveforms ly 1kQ 450 Q OSCILLOSCOPE Rj 50 Q MGA882 10 90 Vf Jak tp input output signal signal Fig 8 Forward recovery voltage test circuit and waveforms 1996 Sep 18 Philips Semiconductors Product specification High speed diodes PMLL4148 PMLL4446 PMLL4448 PACKAGE OUTLINE 1 60 1 45 i le 0 3 TA 3 7 MBA390 2 3 3 Dimensions in mm Fig 9 SOD80C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are i
3. O PMLL4444q O 0 DISCRETE SEMICONDUCTORS DATA SHEET PMLL4148 PMLL4446 PMLL4448 High speed diodes Product specification 1996 Sep 18 Supersedes data of April 1996 File under Discrete Semiconductors SC01 Philips PHILIP S Semiconductors S DH j LI p Philips Semiconductors Product specification High speed diodes PMLL4148 PMLL4446 PMLL4448 FEATURES Small hermetically sealed glass SMD package High switching speed max 4 ns Continuous reverse voltage max 75 V Repetitive peak reverse voltage max 75 V Repetitive peak forward current max 450 mA APPLICATIONS High speed switching Fast logic applications LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 DESCRIPTION The PMLL4148 PMLL4446 PMLL4448 are high speed switching diodes fabricated in planar technology and encapsulated in small hermetically sealed glass SOD80C SMD packages k a O TL Cathode indicated by black band Fig 1 Simplified outline SOD80C and symbol SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VRRM repetitive peak reverse voltage 75 V VR continuous reverse voltage 75 V lr continuous forward current see Fig 2 note 1 200 mA lcRM repetitive peak forward current 450 mA lFsm non repetitive peak forward current square wave Tj 25 C prior to surge see Fig 4 t 1us 4 A t 1ms 1 A t 1s 0 5 JA Pio
4. n accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1996 Sep 18 7
5. t total power dissipation Tamb 25 C note 1 500 mW Tstg storage temperature 65 200 C Tj junction temperature 200 C Note 1 Device mounted on an FR4 printed circuit board 1996 Sep 18 Philips Semiconductors High speed diodes ELECTRICAL CHARACTERISTICS Tj 25 C unless otherwise specified Product specification PMLL4148 PMLL4446 PMLL4448 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Ve forward voltage see Fig 3 PMLL4148 lF 10 mA 1 0 IV PMLL4446 lF 20 mA 1 0 IV PMLL4448 lF 5 mA 620 720 mV IF 100 mA 1 0 IV IR reverse current Vr 20 V see Fig 5 25 nA Vr 20 V Tj 150 C see Fig 5 50 uA IR reverse current PMLL4448 Vr 20 V Tj 100 C see Fig 5 3 uA Ca diode capacitance f 1 MHz Vp 0 see Fig 6 4 pF trr reverse recovery time when switched from Ir 10 mA to 4 ns In 60 mA R 100 Q measured at Irn 1 mA see Fig 7 Vir forward recovery voltage when switched from Ir 50 mA 25 IV t 20 ns see Fig 8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rtn j tp thermal resistance from junction to tie point 300 K W Rth j a thermal resistance from junction to ambient note 1 350 K W Note 1 Device mounted on an FR4 printed circuit board 1996 Sep 18 3 Philips Semiconductors High speed diodes GRAPHICAL DATA Product specification PMLL4148 PMLL4446 PMLL4448
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PHILIPS PMLL4148; PMLL4446; PMLL4448 handbook