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National LM2002/2002A handbook

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1. junction to case 1 196 This Material Copyrighted By Its Respective Manufacturer Typical Performance Characteristics Device Dissipation vs Power Dissipation vs Power Dissipation vs Ambient Temperature Output Power Output Power E INFINITE HEAT SINK Ex 12 Em 5 002 71 00 1 DEVICE DISSIPATION W a PACKAGE DISSIPATION W PACKAGE DISSIPATION W 0 10 20 30 40 50 60 70 80 D 2 4 6 S8 10 12 14 16 18 TA AMBIENT TEMPERATURE OUTPUT POWER W OUTPUT POWER W Open Loop Gain Supply Ripple Rejection Supply Current vs vs Frequency vs Frequency m Supply Voltage 3 m 5 t uU IN KL dl z g gt gt oS A HAT To TNN gt lt 0 100 1 10k 100k 1M 0 2 4 8 B 10 12 14 16 18 20 FREQUENCY Hz FREQUENCY Hz VsupPL V Output Power vs Supply Voltage 5 Distortion vs Output Power Distortion vs Frequency aL T HET 1 CITADO E a LL Ra vss tvi TT _ z x e AL 282 Vg 144V 2 RL 282 Vs 132v E 7 a a ELLE ue _ a m ve av 2 E li ERU RN 7 9 9 0 2 4 6 8 10 12 14 16 16 20 0 1 1 10 20 50 100200 500 Ik 2k 5k tOk 20k Vsupecy V OUTPUT POWER W FREQUENCY Hz Output Swing vs zo Supply Voltage DISTORTION OU
2. LM2002 25V Power Dissipation Note 3 15W Operating Supply Voltage 20V Operating Temperature 0 C to 70 C Storage Temperature 60 to 150 C Lead Temperature Soldering 10 sec 260 C Electrical Characteristics Vs 14 4V Trap 25 C Ay 100 40 dB 40 unless otherwise specified Parameter Conditions Min Typ Max Units DC Output Level be eae ee ee Quiescent Supply Current Excludes Current in Feedback Resistors 5 Supply Voltage Range CT s 2 v Input Resistance e Bandwidth Gain 40 dB ___ 9 Output Power Vs 13 2V f 1 kHz RL 40 THD 10 W Ri 20 THD 10 W Vs 13 8V f 1 kHz RL 40 THD 10 W 20 THD 10 W Vs 14 4V f 1 kHz Ri 49 THD 10 4 8 W Rt 20 THD 10 7 W Rt 1 60 THD 10 W Vs 16 f 1 kHz 40 THD 10 W Rl 20 THD 10 W RL 1 60 THD 10 W THD 2W 40 f 1 kHz 40 29 1 2 Ripple Rejection Rs 500 f 100 Hz dB Rs 500 f 1 kHz Input Noise Voltage Rs 0 15 kHz Bandwidth NEM Input Noise Current Rg 100 15 kHz Bandwidth EN pA Note 1 A 1 0 resistor and 0 1 pF capacitor should be placed as close as possible to pins 3 and 4 for stability Note 2 The LM2002 shuts down above 25V Note 3 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 4 C W
3. National Semiconductor LM2002 LM2002A 8 Watt Audio Power Amplifier General Description B Externally programmable gain The LM2002 is a cost effective high power amplifier suited E ad Miis range dnas for automotive applications High current capability 3 5A ew ORG peris feque enables the device to drive low impedance loads with low Low distortion distortion The LM2002 is current limited and thermally pro High input impedance tected High voltage protection is available LM2002A No turn on transients which enables the amplifier to withstand 40V transients on High voltage protection available LM2002A its supply The LM2002 comes in a 5 pin TO 220 package Low noise AC short circuit protected Pin for pin compatible with TDA2002 V6002W 1 C002W 1 Features High peak current capability 3 5A Large output voltage swing Equivalent Schematic TL H 7929 1 Connection Diagram Plastic Package TL H 7929 2 Order Number LM2002T or LM2002AT See NS Package Number TO5A 4o TL H 7928 3 1 195 This Material Copyrighted By Its Respective Manufacturer Absolute Maximum Ratings if Military Aerospace specified devices are required please contact the National Semiconductor Sales LM2002 LM2002A Output Current Office Distributors for availability and specifications ced A Peak Supply Voltage 50 ms LM2002A Note 2 40V Input Voltage 0 5V
4. TPUT SWING Vp p 0 20 50 100200 500 1 2k Sk 30k 20k 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY Hz Vsupecy V TL H 7929 4 1 197 This Material Copyrighted By Its Respective Manufacturer Typical Applications continued 16W Bridge Amplifier LM2002 LM2002A w mAH TL H 7929 5 Component Layout Single Amplifier Vs 20V RL 40 HEAT SINK TL H 7929 6 Staver V 5 Heatsink Staver Company 41 Saxon Ave P O Drawer H Bayshore NY 11706 TEL 516 666 8000 1 198 This Material Copyrighted By Its Respective Manufacturer

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