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VISHAY BF994S N Channel Dual Gate MOS-Fieldeffect Tetrode Depletion Mode handbook

1. Parameter Test Conditions Type Symbol Min Typ Max Unit Drain source Ip 10 uA Vas Vasos 4 V V BR DS 20 V breakdown voltage Gate 1 source aus 10 mA Vaos Vps 0 tV igRaiss 6 20 V breakdown voltage Gate 2 source tas 10 mA Veis Vps 0 V BR G2SS 20 V breakdown voltage Gate 1 source iVais 5 V Vagos Vps 0 Hass 50 nA leakage current Gate 2 source Ve2s 5 V Veis Vps 0 tla ss 50 nA leakage current Drain current Vos 15 V Va1s 0 Voas 4 V BF994S loss 4 18 mA BF994SA Ipss 4 10 5 mA BF994SB Ipss 9 5 18 mA Gate 1 source Vos 15 V Vagos 4 V lp 20 uA VG1S OFF 25 V cut off voltage Gate 2 source Vos 15 V Vers 0 Ip 20 uA Vges oFF 20 V cut off voltage Electrical AC Characteristics Vos 15 V Ip 10 mA Vasos 4 V f 1 MHz Tamb 25 C unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y21s 15 18 5 mS Gate 1 input capacitance Cissgt 25 3 0 pF Gate 2 input capacitance Vous 0 Voas 4 V Cissg2 1 2 pF Feedback capacitance Cres 25 35 fF Output capacitance Coss 1 0 1 3 pF Power gain Gs 2 mS GL 0 5 mS f 200 MHz Gps 25 dB AGC range Vaos 4 to 2 V f 200 MHz AGps 50 dB Noise figure Gs 2 mS G 0 5 mS f 200 MHz F 1 0 dB www vishay de e FaxBack 1 408 970 5600 Document Number 85008 2 7 Rev 3 20 Jan
2. 500MHz S 2 5 20 400MHz e a A 300MHz E Vps 15V 10 200MHz Re Ip 10mA 0 5 f 50 700MHz 0 0 0 4 0 8 1 2 1 6 2 0 12862 Re y22 mS Figure 12 Short Circuit Output Admittance www vishay de e FaxBack 1 408 970 5600 4 7 Document Number 85008 Rev 3 20 Jan 99 VISHAY BF994S Vishay Telefunken Vos 15V Ip 10 mA Vasos 4 V Zn 50 Q m d 70MHz S A om 12 965 90 Figure 15 Reverse transmission coefficient Ke CS i Tomu i 0 2031 1200 600 Ee T 12 966 90 12267 j Figure 14 Forward transmission coefficient Figure 16 Output reflection coefficient Document Number 85008 www vishay de e FaxBack 1 408 970 5600 Rev 3 20 Jan 99 5 7 BF994S Vishay Telefunken Dimensions in mm S 1 7 0 1 0 4005 a 192 0 8005 0 1 70 03 ji al PE E JD c PES zo p 0 01 2 85 038 ce technical drawings according to DIN specifications 96 12240 www vishay de e FaxBack 1 408 970 5600 Document Number 85008 6 7 Rev 3 20 Jan 99 VISHAY BF994S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1 Meet all present and future national and international statutory requirements 2 Regularly and continuously improve t
3. D 0 BF994 0 O VISHAY BF994S Depletion Mode Electrostatic sensitive device Vishay Telefunken N Channel Dual Gate MOS Fieldeffect Tetrode A Observe precautions for handling MS Applications Input and mixer stages especially VHF TV tuners Features e Integrated gate protection diodes e High AGC range e High cross modulation performance e Low feedback capacitance e Low noise figure e Low input capacitance 2 1 Do OD Gio 94 9279 3 4 BF994 Marking MG S Plastic case SOT 143 12623 O 1 Source 2 Drain 3 Gate 2 4 Gate 1 Absolute Maximum Ratings Tamb 25 C unless otherwise specified Parameter Test Conditions Type Symbol Value Unit Drain source voltage Vos 20 V Drain current Ip 30 mA Gate 1 Gate 2 source peak current tla1 G28M 10 mA Total power dissipation Tamb lt 60 C Piot 200 mW Channel temperature Tch 150 C Storage temperature range Tstg 55 to 150 C Maximum Thermal Resistance Tamb 25 C unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board 25 x 20 x 1 5 mm Rthcha 450 K W plated with 35um Cu Document Number 85008 Rev 3 20 Jan 99 www vishay de e FaxBack 1 408 970 5600 1 7 BF994S Vishay Telefunken Electrical DC Characteristics Tamb 25 C unless otherwise specified
4. 99 VISHAY BF994S Vishay Telefunken Typical Characteristics Tamb 25 C unless otherwise specified 300 22 S 20 S KS AV S X 16 A o 2 1V H 200 S 14 A E 2 9 12 Aa 150 5 B o 10 Ss 8 0 100 g 8 3 SE o E a 50 4 ar 2 Va s 1V 0 0 0 20 40 60 80 100 120 140 160 1 0 5 0 0 0 5 1 0 1 5 96 12159 Tamb Ambient Temperature C 12852 Vasos Gate 2 Source Voltage V Figure 1 Total Power Dissipation vs Figure 4 Drain Current vs Gate 2 Source Voltage Ambient Temperature 4 0 Vgos 4V E 5 Piot 200mW amp 3 o o 2 E 3 0 amp S 25 E S E S 20 5 5 E 3 E IS A 2 S 10 o E E 0 5 V 0 1 0 5 0 0 0 5 1 0 1 5 12849 Vps Drain Source Voltage V 12853 Ip Drain Current mA Figure 2 Drain Current vs Drain Source Voltage Figure 5 Gate 1 Input Capacitance vs Drain Current 22 3 0 20 _ 6V 5V JN ay a ig L Vos 15V 2V 25 PCM o Ns i B ao 4 S S 12 5 T O 10 0 5V B E m S N 10 A 2 i S 5 a E 05 E 2 Vgas 1V E 0 VS 0 1 0 5 0 0 0 5 1 0 1 5 12851 Va1s Gate 1 Source Voltage V 12854 YGS Gate 2 Source Voltage V Figure 3 Drain Current vs Gate 1 Source Voltage Figure 6 Gate 2 Input Capacitance vs Gate 2 Source Voltage Document Num
5. ber 85008 www vishay de e FaxBack 1 408 970 5600 Rev 3 20 Jan 99 3 7 BF994S Vishay Telefunken 2 0 18 D 16 9 14 3 9 12 S g 10 amp 08 3 S 0 6 2 04 ki gt 0 3 0 0 2 4 6 8 10 12 14 16 18 20 12856 Vps Drain Source Voltage Y Figure 7 Output Capacitance vs Drain Source Voltage 10 AN A f 200MHz 3V e 2V z l ir O LV Ei 5 20 0 5 So 0 2V a 0 4V E 0 6 V l 40 B 0 8V CH I mn 20 Vaos 1V 60 2 0 15 1 0 0 5 00 05 10 15 2 0 12855 Vgis Gate 1 Source Voltage Y Figure 8 Transducer Gain vs Gate 1 Source Voltage 20 an AN ES 18 Vps 15V av f 1MHz o 16 2V S 3 14 E E 12 1V 8 10 E yo E 8 Z 3 ed S 2 Vgos 0 0 5V 0 0 2 4 6 8 10 12 14 16 18 12850 Ip Drain Current mA Figure 9 Forward Transadmittance vs Drain Current 600MHz a E ES 400MHz a Y 300MHz E Vps 15V 200MHz WVa2s 4V Ip 10mA f 50 700MHz 50MHz 0 05 10 15 20 25 30 12860 Re yj mS Figure 10 Short Circuit Input Admittance 0 A 300M 2 3 500MHz Gs 700MHz A 12 E Ip 5mA 16 20 0 2 4 6 8 10 12 14 16 18 20 22 12861 Re y21 mS Figure 11 Short Circuit Forward Transfer Admittance 4 0 3 5 3 0 600MHz
6. for each customer application by the customer Should the buyer use Vishay Telefunken products for any unintended or unauthorized application the buyer shall indemnify Vishay Telefunken against all claims costs damages and expenses arising out of directly or indirectly any claim of personal damage injury or death associated with such unintended or unauthorized use Vishay Semiconductor GmbH P O B 3535 D 74025 Heilbronn Germany Telephone 49 0 7131 67 2831 Fax number 49 0 7131 67 2423 Document Number 85008 www vishay de e FaxBack 1 408 970 5600 Rev 3 20 Jan 99 7 7
7. he performance of our products processes distribution and operating systems with respect to their impact on the health and safety of our employees and the public as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs The Montreal Protocol 1987 and its London Amendments 1990 intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents 1 Annex A B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 Class and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency EPA in the USA 3 Council Decision 88 540 EEC and 91 690 EEC Annex A B and C transitional substances respectively Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances We reserve the right to make changes to improve technical design and may do so without further notice Parameters can vary in different applications All operating parameters must be validated

VISHAY BF994S N Channel Dual Gate MOS-Fieldeffect Tetrode Depletion Mode handbook

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