PHILIPS BF901; BF901R handbook
Contents
1. lgo ss5 10 mA Vai s Vps 0 VGI S th gate 1 source threshold voltage Ip 20 uA Vps 8 V Vez s 4 V VG2 S th gate 2 source threshold voltage Ip 20 uA Vps 8V Va1 s 0 Vos 4V Vars LI Vi Vazs 34V DYNAMIC CHARACTERISTICS Measuring conditions common source Ip 14 mA Vps 5 V Vez s 4 V Tamb 25 C SYMBOL PARAMETER CONDITIONS transfer admittance pulsed Tj 25 C input capacitance at gate 1 f 1 MHz input capacitance at gate 2 output capacitance feedback capacitance noise figure f 200 MHz Gs 2 mS Bs Bsopt f 800 MHz Gs 3 3 mS Bs Bsopt November 1992 4 Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R PACKAGE OUTLINE Plastic surface mounted package reverse pinning 4 leads SOT143R Lp detail X 0 1 Litirririti titi is scale DIMENSIONS mm are the original dimensions UNIT A mm OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT143R EH 97 03 10 November 1992 5 Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R Plastic surface mounted package 4 leads S2. OO BF9010 0 O DISCRETE SEMICONDUCTORS DATA SHEET BF901 BF901R Silicon n channel dual gate MOS FETs Product specification November 1992 File under Discrete Semiconductors SC07 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R FEATURES e Intended for low voltage operation e Short channel transistor with high ratio Yis Cis e Low noise gain controlled amplifier to 1 GHz e BF901R has reverse pinning DESCRIPTION Enhancement type field effect transistors in plastic microminiature SOT143 and SOT143R envelopes with source and substrate interconnected They are intended for UHF and VHF applications such as television tuners and professional communications equipment especially suited for low voltage operation These MOS FET tetrodes are protected against excessive input voltage surges by integrated back to back diodes between gates and source QUICK REFERENCE DATA SYMBOL PARAMETER drain source voltage drain current Prot total power dissipation Tj junction temperature 150 Viel transfer admittance 28 35 Cigt s input capacitance at gate 1 2 35 2 75 Crs feedback capacitance 25 fF F noise figure at 800 MHz 1 7 dB PINNING DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 November 1992 s b Top view MAM039 Marking code MO1 Fig 1 Simpl
3. OT143B detail X 0 1 bitirririti titi scale DIMENSIONS mm are the original dimensions A1 UNIT 0 1 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT143B EH 97 02 28 November 1992 6 Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Short form specification The data in this specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteri
4. ified outline SOT143 and symbol s b MAM040 Top view Marking code MO2 Fig 2 Simplified outline SOT143R and symbol Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R LIMITING VALUES In accordance with the Absolute Maximum System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vps drain source voltage Ip DC drain current leo s gate 2 source current Prot total power dissipation BF901 up to Tamb 50 C note 1 BF901R up to Tamb 40 C note 1 storage temperature junction temperature THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rtn j a thermal resistance from junction to ambient note 1 BF901 500 K W BF901R 550 K W Note 1 Device mounted on an FR4 printboard MBB756 240 Ptot mW BF901R BF901 120 0 0 50 100 150 200 Tamb C Fig 3 Power derating curve November 1992 3 Philips Semiconductors Product specification Silicon n channel dual gate MOS FETs BF901 BF901R STATIC CHARACTERISTICS Tj 25 C SYMBOL PARAMETER CONDITIONS MIN MAX UNIT le1 ss gate 1 cut off current Va1 8 5 V Vez s Vps 0 lgo ss gate 2 cut off current V o s 5 V Va1 s Vps 0 V BR G1 SS gate 1 source breakdown voltage lgi ss 10 MA Ve2 s Vps 0 V BR G2 SS gate 2 source breakdown voltage
5. stics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale November 1992 7
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PHILIPS BF901; BF901R handbook