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PHILIPS BF908; BF908R handbook

1. drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance f 1 MHz noise figure f 800 MHz x 1996 Jul 30 Philips Semiconductors Dual gate MOS FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 Product specification BF908 BF908R SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vps drain source voltage 12 V Ip drain current 40 mA tle gate 1 current 10 mA tlez gate 2 current 10 mA Prot total power dissipation see Fig 3 note 1 BF908 up to Tamb 50 C 200 mW BF908R up to Tamb 40 C 200 mW Tstg storage temperature 65 150 C Tj operating junction temperature 150 C Note 1 Device mounted on a printed circuit board 250 MRC275 lot mW 200 BF908 150 BF908R 100 50 0 0 50 100 150 200 Tamb C Fig 3 Power derating curves 1996 Jul 30 3 Philips Semiconductors Dual gate MOS FETs Product specification BF908 BF908R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j a thermal resistance from junction to ambient note 1 BF908 500 K W BF908R 550 K W Note 1 Device mounted on a printed
2. A B MERI EX 0 1 Be max A LX 10 h 4 max 11 hv Dimensions in mm MBC845 TOP VIEW Fig 8 SOT143 Dimensions in mm B 0 150 040 2 gt S 0 090 A 0 25 y A foci A T i 10 max 14 25 ue s 1 2 max 10 wb T max Y 4 Y 4 14 Ns t f a max gg MBC844 max ANTES 1 7 0 1 M B TOP VIEW Fig 9 SOT143R 1996 Jul 30 Philips Semiconductors Product specification Dual gate MOS FETs BF908 BF908R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may
3. affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1996 Jul 30 8
4. 0 0 979 20 8 3 450 154 9 0 003 74 6 0 987 9 5 300 0 962 30 3 3 318 143 7 0 004 69 5 0 983 13 9 400 0 939 40 1 3 234 131 9 0 005 65 6 0 980 18 5 500 0 914 49 1 3 093 120 7 0 006 64 4 0 974 22 8 600 0 892 57 1 2 912 111 1 0 005 63 1 0 969 27 0 700 0 865 64 4 2 774 101 0 0 005 65 2 0 966 31 2 800 0 837 71 6 2 616 91 4 0 004 70 8 0 965 35 4 900 0 811 78 1 2 479 81 9 0 004 87 4 0 965 39 4 1000 0 785 84 5 3 329 72 5 0 003 108 0 0 966 43 7 Vps 8 V Voas 4 V lp 15 mA Tamb 25 C 50 0 998 5 3 3 983 173 4 0 001 95 5 0 994 2 4 100 0 994 10 9 3 943 167 5 0 001 93 6 0 991 5 0 200 0 976 21 6 3 878 154 7 0 003 74 3 0 984 9 7 300 0 957 31 7 3 722 143 3 0 004 70 0 0 979 14 2 400 0 934 41 7 3 614 131 6 0 005 63 5 0 975 18 8 500 0 907 51 1 3 446 120 4 0 006 62 2 0 969 23 2 600 0 885 59 1 3 240 110 9 0 005 59 6 0 964 27 4 700 0 851 66 8 3 072 100 9 0 005 64 8 0 961 31 6 800 0 826 73 9 2 891 91 3 0 004 67 8 0 959 35 9 900 0 797 80 7 2 733 81 9 0 004 85 0 0 958 40 0 1000 0 773 87 0 2 569 72 8 0 004 102 9 0 958 44 2 Table 2 Noise data f Fmin V opt i MHz dB ratio deg 5 Vps 8 V Veo s 4 V Ip 10 mA Tamb 25 C 800 1 50 0 720 56 7 0 580 Vps 8 V Voas 4 V Ip 15 mA Tamb 25 C 800 1 50 0 700 59 2 0 520 1996 Jul 30 6 Philips Semiconductors Dual gate MOS FETs Product specification BF908 BF908R PACKAGE OUTLINES 0 150 0 090 z o2
5. 30 m 1 5V A 1V 0 5 V 10 OV Vps 8 V Tj 25 C Fig 4 Transfer characteristics typical values MRC282 30 T 7 VG1 s 0 3 V Ip mA 0 2 V 20 0 1 V 0v 10 0 1 V 0 2 V 0 3V 0 0 4 8 12 16 Vps V Va2 s 4 V Tj 25 C Fig 5 Output characteristics typical values MRC280 50 n IYts 3 V mS 2V 40 15V 30 1V 20 0 5 V 10 Vases oV 0 0 5 10 15 20 25 Ip mA Vps 8 V Tj2 25 C Fig 6 Forward transfer admittance as a function of drain current typical values MRC276 40 0 40 80 120 160 Vps 8 V Veos 4 V ID 15 mA Fig 7 Forward transfer admittance as a function of junction temperature typical values 1996 Jul 30 Philips Semiconductors Product specification Dual gate MOS FETs BF908 BF908R Table 1 Scattering parameters S41 S21 S12 S22 MHz MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE ratio deg ratio deg ratio deg ratio deg Vos 8 V Va2 s 4 Vi lp 10 mA Tamb 25 C 50 o998 51 3537 1735 420001 982 O96 24 100 0 994 10 4 3 502 167 7 0 001 88 8 0 994 4 9 20
6. OO BFo0g O O DISCRETE SEMICONDUCTORS DATA SHEET BF908 BF908R Dual gate MOS FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors SCO7 Philips PHILIP S Semiconductors DH i LI p Philips Semiconductors Product specification Dual gate MOS FETs BF908 BF908R FEATURES High forward transfer admittance e Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz APPLICATIONS e VHF and UHF applications with 12 V supply voltage Such as television tuners and professional communications equipment Top view MAMO039 DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package The transistors are protected against excessive input voltage surges by integrated back to back diodes between gates and source CAUTION The device is supplied in an antistatic package The Fig 1 Simplified outline SOT143 and symbol BF908 gate source input must be protected against static discharge during transport or handling PINNING PIN SYMBOL DESCRIPTION BR oOnD s b d 92 91 source drain gate 2 gate 1 MAM040 Top view Fig 2 Simplified outline SOT143R and symbol BF908R QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN TYP drain source voltage
7. circuit board STATIC CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT tViBRjai ss gate 1 source breakdown voltage Ve2 s Vps 0 lai 10 mA 8 20 V V BR G2 ss gate 2 source breakdown voltage Ve1 s Vps 0 la s 10 mA 8 20 V V PjG1 s gate 1 source cut off voltage Va2 s 4 V Vps 8 Vi lp 20 pA 2 V V PyG2 s gate 2 source cut off voltage Va1i s 4 V Vps 8 V Ip 20 pA 1 5 V Ipss drain source current Vez s 4 V Vps 8 V Vei s 0 3 15 27 mA le1 ss gate 1 cut off current Vee s Vps 0 Vers 2 5 V 50 nA tlao ss gate 2 cut off current Va1i s Vps 0 Vez s 5 V 50 nA DYNAMIC CHARACTERISTICS Common source Tamb 25 C Vps 8 V Vez s 4 Vi lp 15 mA unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT lytsl forward transfer admittance pulsed Tj 25 C f 1 MHz 36 43 50 mS Cigt s input capacitance at gate 1 f 1 MHz 2 4 3 1 4 pF Cigo s input capacitance at gate 2 f21MHz 1 2 1 8 2 5 pF Cos output capacitance f21MHz 1 2 1 7 2 2 pF Crs reverse transfer capacitance f 1 MHz 20 30 45 fF F noise figure f 200 MHz Gs 2 mS Bs Bsopt 0 6 1 2 dB f 800 MHz Gs Gsopt Bs Bsopt 1 5 2 5 dB 1996 Jul 30 4 Philips Semiconductors Dual gate MOS FETs Product specification BF908 BF908R MRC281 40 Nga sv Ip mA 3V

PHILIPS BF908; BF908R handbook

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