PHILIPS BGA2003 handbook
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1. loTRL 1 mA Fig 7 Bias current lys our as a function of the voltage at the output pin Vys our typical Vvs OUT 2 5 V f 1000 MHz Fig 8 Transition frequency as a function of the bias current Iys our typical values parameter typical values values MGS542 MGS543 25 30 fT gain GHz dB R 25 MSG Gmax e GUM 20 15 15 10 10 2 5 0 0 0 10 20 30 0 5 10 15 20 25 Ivs our mA Ivs our mA Vvs OUT 2 5 V f 900 MHz Fig 9 Gain as a function of the bias current lvs our typical values 1999 Jul 23 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS545 25 MGS544 40 gain gain dB dB 20 MSG 30 Gmax 15 c GUM M Gmax 10 10 5 0 0 2 4 0 5 10 15 20 25 10 108 f MHz 10 lvs our mA Vvs OUT 2 5 V f 1800 MHz Vvs OUT 2 5V lys ouT 10 mA Fig 11 Gain as a function of frequency typical values Fig 10 Gain as a function of the bias current lvs out typical values MGS546 1 5 ERGE 0 5 0 lys ouT mA ie 1 2 3 4 f 2400 M2. contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1999 Jul 23 11 Philips Semiconductors Argentina see South America Australia 3 Figtree Drive HOMEBUSH NSW 2140 Tel 61 2 9704 8141 Fax 61 2 9704 8139 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 1 60 101 1248 Fax 43 1 60 101 1210 Belarus Hotel Minsk Business Center Bld 3
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4. 8 dB 1999 Jul 23 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vs supply voltage RF input AC coupled 4 5 V voltage on control pin supply current DC forced by DC voltage on RF input or GTRL Tstg storage temperature 65 4150 C Tj operating junction temperature 150 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rin j s thermal resistance from junction to soldering point 350 K W CHARACTERISTICS RF input AC coupled T 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Is supply current Vvs out 2 5 V IotRL 0 4 mA 3 4 5 6 mA Vvs ouT 2 5 V ICTRL 1 0mA 8 11 15 mA MSG maximum stable gain Vvs out 2 5 Vi lys our 10 mA 24 dB f 900 MHz Vvs OUT 2 5 V lvs oUT 10 mA 16 dB f 1800 MHz S24 insertion power gain Vvs out 2 5 Vi lys our 10 mA 18 19 dB f 900 MHz Vvs OUT 2 5V lvs oUT 10 mA 13 14 f 1800 MHz 12 isolation Vvs out 2 5 Vi lys our 0 M 26 x dB f 2 900 MHz Vvs our 2 5 V lys our 0 x 20 dB f21800 MHz NF noise figure Vvs out 2 5 Vi lys out 10 mA dB f 900 MHz T s I opt Vvs our 2 5 V Ivs out 10 mA dB f 1800 MHz T s I opt IP3 in input intercept point note 1 Vvs o
5. 8 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Fax 1 800 943 0087 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11000 BEOGRAD Tel 381 11 62 5344 Fax 381 11 63 5777 Internet http www semiconductors philips com SCA67 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 125006 04 pp12 Philips Semiconductors Date of release 1999 Jul 23 Document order number 9397 750 06134 Lett make things bettur S PHILIPS
6. Hz f21800 MHz f21000 MHz 4 f 900 MHz Fig 12 Minimum noise figure as a function of the bias current Iys our typical values 1999 Jul 23 6 Philips Semiconductors Silicon MMIC amplifier Product specification BGA2003 90 MGS548 Fig 14 Noise stability and gain circles typical values unstable region EN 1 0 source Zo NEN 135 N o 08 BN unstable region load T 0 6 0 4 r 0 2 180 0 0 f 900 MHz Vvs ouT 2 5 V lys oUT 10 mA Zo 50Q 1 G 23 dB 2 G 22dB 3 G 21 dB 4 NF 1 8 dB l i 5 NF 2dB me 6 NF 2 2 dB MGS547 Fig 13 Noise stability and gain circles typical values iure egion unstable T 1 0 region load L 0 8 gt NN 0 4 0 2 0 f 1800 MHz Vvs ouT 2 5 V lvs ouT 10 mA Z 50 Q 1 Gmax 16 1 dB 2 G 164dB 3 G 15 dB 4 G 14 dB 5 NF 1 9 dB 6 NF 2 1 dB 7 NF 2 3 dB 1 0 1999 Jul 23 7 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 Hv GHz 1 GHz 90 MGS549 Vys ouT 2 5 V lvs ouT 10 mA Le 50 Q Fig 15 Common emitter input reflection coefficient s41 typical values 90 135 500 MHz 100 MHz 180 135 45 90 MGS550 Vys ouT 2 5 V lvs ouT 10 mA Zo 50 Q Fig 16 Common emitter forward transmission coefficient s21 typical values 1999
7. Jul 23 8 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90 135 45 3 GHz 180505 04 0 3 02 0 1 0 100 MHz 135 45 90 MGS551 Vys ouT 2 5 V lvs ouT 10mA Le 50 Q Fig 17 Common emitter reverse transmission coefficient s12 typical values 1GHz S s 500 MHz 90 MGS552 Vvs OUT 2 5 V lvs ouT 10 mA Le 50 Q Fig 18 Common emitter output reflection coefficient S22 typical values 1999 Jul 23 9 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 PACKAGE OUTLINE Plastic surface mounted package reverse pinning 4 leads SOT343R p Lp al detail X 0 1 2mm scale DIMENSIONS mm are the original dimensions A UNIT A X by 1 1 0 7 0 8 R 0 5 OUTLINE VERSION REFERENCES EUROPEAN JEDEC EIAJ PROJECTION ISSUE DATE SOT343R Ege 97 05 21 1999 Jul 23 10 Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet
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9. O 0 BGA2003 0 O DISCRETE SEMICONDUCTORS DATA SHEET BGA2003 Silicon MMIC amplifier Product specification 1999 Jul 23 Supersedes data of 1999 Feb 25 Philips PHILIPS Semiconductors DH l LI L Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 FEATURES Low current Very high power gain Low noise figure e Integrated temperature compensated biasing e Control pin for adjustment bias current e Supply and RF output pin combined APPLICATIONS e HF front end e Wideband applications e g analog and digital cellular telephones cordless telephones PHS DECT etc Low noise amplifiers e Satellite television tuners SATV e High frequency oscillators DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic 4 pin SOT343R package QUICK REFERENCE DATA PINNING DESCRIPTION in es bias current control 4 Vs RF out CTRL Vg RFout ama E RFin 2 Top view MAM427 Marking code A3 Fig 1 Simplified outline SOT343R and symbol SYMBOL PARAMETER CONDITIONS TYP MAX UNIT DC supply voltage RF input AC coupled DC supply current Vvs out 2 5 Vi Iota 1 mA RF input AC coupled maximum stable gain Vvs out 2 5 V f 1800 MHz Tamb 25 C NF noise figure Vvs out 2 5 V f 1800 MHz T s T opt 1
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11. ut 2 3 V lvg out 3 6 mA dBm f 900 MHz Vvs ouT 2 3 V lvs oUT 3 5 mA 4 8 dBm f 1800 MHz Note 1 See application note RNR T45 99 B 0514 1999 Jul 23 Philips Semiconductors Silicon MMIC amplifier Product specification BGA2003 MGS537 200 Prot mW 150 100 50 0 0 50 100 150 200 RF in MGS536 Tg C Fig 2 Typical application circuit Fig 3 Power derating MGS538 MGS539 2 5 30 ICTRL mA lvs OUT 2 mA 20 1 5 1 10 0 5 0 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 2 5 VcrRL V IcrRL mA loTRL VcrRL v 0 83 296 Vs oUT 25V Fig 4 Control current as a function of the control voltage on pin 3 typical values Fig 5 Bias current as a function of the control current typical values 1999 Jul 23 Philips Semiconductors Silicon MMIC amplifier MGS540 30 IVS OUT 6 mA 25 20 0 40 0 40 80 120 Vs out 2 5 V 1 lers 2 0 2 mA 4 lemi 1 5 mA 2 lcrRL 0 4 mA 5 lcrRL 2 0 mA 3 IcTRL 1 0 mA 6 IoTRL 2 5 mA Fig 6 Bias current lys our as a function of the ambient temperature with IcTRL as Product specification BGA2003 MGS541
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PHILIPS BGA2003 handbook