PHILIPS PBSS8110Z handbook
Contents
1. 108 001aaa501 RCEsat 9 102 10 1 1 2 1071 e 1071 1 10 102 103 104 Ic mA Ic lg 10 1 Tamb 100 C 2 Tamb 25 C 3 Tamb 55 C Fig 12 Equivalent on resistance as a function of collector current typical values 001aaa502 103 RCEsat 9 102 1071 10 1 1 10 102 103 104 Ic mA lc lg 20 Tamb 25 C Fig 13 Equivalent on resistance as a function of collector current typical values 001aaa503 103 RcEsat Q 102 10 10 1 1071 1 10 10 103 104 Ic mA Ic lg 50 Tamb 25 C Fig 14 Equivalent on resistance as a function of collector current typical values 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 Philips Semiconductors PBSS81 1 0Z L 100 V 1 A NPN low Veesat BISS trans2. 403 001aaa505 VCEsat mV 10 10 1071 1 10 102 103 104 Ic mA lc lg 20 Tamb 25 C Fig 6 Collector emitter saturation voltage as a function of collector current typical values 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 6 of 12 Philips Semiconductors PBSS81 1 0Z o 100 V 1 A NPN low Veesat BISS transistor 104 001aaa506 1200 001aaa498 VBEsat VcEsat mV mV 1000 103 1 800 3 3 600 102 400 10 200 10 1 1 10 102 103 104 10 1 1 10 102 103 104 Ic mA Ic mA Ic lg 50 Tamb 25 C lc lg 10 1 Tamb 55 C 2 Tamb 25 C 3 Tamb 100 C
3. Fig 7 Collector emitter saturation voltage as a Fig 8 Base emitter saturation voltage as a function of function of collector current typical values collector current typical values 1200 001aaa499 1000 001aaa500 VBEsat mV VBEsat mV 1000 800 800 600 600 400 400 10 1 1 10 102 103 104 10 1 1 10 102 103 104 Ic mA Ic mA Ic lg 20 Tamb 25 C lc lg 50 Tamb 25 C Fig 9 Base emitter saturation voltage as a function of Fig 10 Base emitter saturation voltage as a function of collector current typical values collector current typical values 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 7 of 12 Philips Semiconductors PBSS8110Z 100 V 1 A NPN low Veesat BISS transistor 2 001aaa496 lc IHE 1 A nn 1 6 nie OTT TI eT Td 6 1 2 OE 8 EO a 0 4 0 0 1 2 3 4 5 Vee V Tamb 25 C 1 lg 2 35 mA 2 lg 2 31 5 mA 3 IB 2 28 mA 4 lg 24 5 mA 5 lg 21 mA 6 Ig 2 17 5 mA 7 lg 14 mA 8 lg 10 5 mA 9 IB 7 mA 10 lg 3 5 mA Fig 11 Collector current as a function of collector emitter voltage typical values
4. Fig 2 Transient thermal impedance as a function of pulse time typical values 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 4 of 12 Philips Semiconductors PBSS8110Z 7 Characteristics 100 V 1 A NPN low Veesat BISS transistor Table 7 Characteristics Tj 25 C unless otherwise specified Symbol Parameter Conditions Min Unit IcBo collector base cut off Vcg 80V lg 20A nA current Vcs 80 V le 0 A uA Tj 150 C ICES collector emitter Vcg 80 V Vgg 0 V nA cut off current lEBo emitter base cut off Veg 4Vilg 0A nA current hfe DC current gain Vcg 10 V Ilo 1 mA 150 Vcg 10 V lc 250 mA 150 Vcg 10 V I 0 5 A 100 Vce 10 V Ic 21A 80 Veesat collector emitter lc 100 mA lg 10 mA mV saturation voltage Ic 500 mA lg 50 mA mV Ic 1 A Ig 100 mA mV Rcesat equivalent lc 1 A Ig 100 mA ma on resistance VBEsat base emitter lc 1 A Ig 100 mA V saturation voltage VBEon base emitter turn on Vece 10V lg 21A V voltage fr transition frequency Vcg 10 V Ic 50 mA 100 MHz f 100 MHz Ce collector capacitance Vcs 10 V le l 0 A pF f 1 MHz 1 Pulse test tp lt 300 us 8 lt 0 02 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 5
5. PBSS8110Z O zh 100 V 1 A NPN low Veesat BISS transistor Rev 01 26 April 2004 Product data sheet PBSS8110Z 1 Product profile 1 1 1 2 1 3 1 4 General description NPN low Voesat transistor in a plastic SOT223 SC 73 package Features m SOT223 package B Low collector emitter saturation voltage Voesat B High collector current capability lc and lcm B High efficiency leading to less heat generation Applications B Major application segments Automotive 42 V power Telecom infrastructure Industrial B DC to DC converter B Peripheral driver Driver in low supply voltage applications e g lamps and LEDs Inductive load drivers e g relays buzzers and motors Quick reference data Table 1 Quick reference data Symbol Parameter Conditions Min Typ Max Unit VcEo collector emitter voltage 100 V lc collector current DC 1 A lem peak collector current 3 A Reesat equivalent on resistance 200 mQ PHILIPS Philips Semiconductors PBSS8110Z 100 V 1 A NPN low Veesat BISS transistor 2 Pinning information Table2 Discrete pinning 1 base 2 4 collector i i 3 emitter 1 3 sym016 1 2 3 Top view 3 Ordering information Table 3 Ordering information PBSS8110Z plastic surface mounted package collector pad for good SOT223 heat transfer 4 leads 4 Marking Table 4 Marking PBSS8110Z PB8110 1 Made
6. Veesat BISS transistor Koninklijke Philips Electronics N V 2004 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Date of release 26 April 2004 Document order number 9397 750 12568 Published in The Netherlands
7. collector mounting pad 3 FR4 PCB standard footprint Fig 1 Power derating curves Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 3 of 12 Philips Semiconductors PBSS81 1 0Z L 100 V 1 A NPN low Veesat BISS transistor 6 Thermal characteristics Table 6 Thermal characteristics Symbol Parameter Conditions Typ Unit Ring a thermal resistance in free air Hu 192 K W from junction to 2 125 K W ambient BI 89 K W Ring s thermal resistance in free air ru 17 K W from junction to soldering point 1 Device mounted on a FR4 printed circuit board single sided copper tin plated standard footprint 2 Device mounted on a FR4 printed circuit board single sided copper tin plated 1 cm collector mounting pad 3 Device mounted on a FR4 printed circuit board single sided copper tin plated 6 cm collector mounting pad 001aaa713 1071 1075 104 1073 1072 1071 1 10 102 103 Mounted on FR4 PCB standard footprint 1
8. in Hong Kong 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 2of 12 Philips Semiconductors PBSS8110Z 100 V 1 A NPN low Veesat BISS transistor 5 Limiting values 9397 750 12568 Table 5 Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 Symbol Parameter Conditions Min Max Unit VcBo collector base voltage open emitter 120 V VcEo collector emitter voltage open base 100 V Vepo emitter base voltage open collector 5 V lem peak collector current Titmax 3 A Ic collector current DC 1 A lg base current DC 0 3 A Piot total power dissipation Tamb 25 C Br 650 mW a 1000 mW B 14 Ww Tj junction temperature 150 C San operating ambient temperature 65 150 C T stg storage temperature 65 4150 C 1 Device mounted on a FR4 printed circuit board single sided copper tin plated standard footprint 2 Device mounted on a FR4 printed circuit board single sided copper tin plated 1 cm collector mounting pad 3 Device mounted on a FR4 printed circuit board single sided copper tin plated 6 cm collector mounting pad 001aaa508 1 6 Piot W 1 2 0 8 0 4 0 40 80 120 160 Tamb C 1 FR4 PCB 6 cm collector mounting pad 2 FR4 PCB 1 cm
9. ent Philips Semiconductors reserves the right to change the specification in any manner without notice Il Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product tl Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification CPCN 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status 11 Definitions 12 Disclaimers Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiti
10. istor 8 Package outline Plastic surface mounted package collector pad for good heat transfer 4 leads SOT223 detail X 0 2 4mm scale DIMENSIONS mm are the original dimensions UNIT A Ay bi D 1 8 34 6 7 1 5 2 9 6 3 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT223 SC 73 f Mena Fig 15 Package outline 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 9 of 12 Philips Semiconductors PBSS81 1 0Z NH 100 V 1 A NPN low Voesat BISS transistor 9 Revision history Table8 Revision history Na TT ES Re mac YT Je ite r cument ID Order number PBSS8110Z 1 20040426 Product data 9397 750 12568 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 10 of 12 Philips Semiconductors PBSS8110Z 100 V 1 A NPN low Veesat BISS transistor 10 Data sheet status Level Datasheet status Product status 218 Definition l Objective data Development This data sheet contains data from the objective specification for product developm
11. ng values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification Life support These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be comm
12. of 12 Philips Semiconductors PBSS8110Z 100 V 1 A NPN low Veesat BISS transistor 001aaa497 hFE 400 200 3 10 1 1 10 102 103 104 Ic mA Vcg 10 V 1 Tamp 100 C 2 Tamb 25 C 3 Tamb 55 C Fig 3 DC current gain as a function of collector current typical values 1000 001aaa495 VBE mV 800 600 400 200 10 1 1 10 Vee 10 V 1 Tamb 55 C 2 Tamb 25 C 3 Tamb 100 C Fig 4 Base emitter voltage as a function of collector current typical values 102 103 104 Ic mA 103 001aaa504 VcEsat mV 102 s 2 3 10 10 1 1 10 102 103 104 Ic mA Ic lg 10 1 Tamb 100 C 2 Tamb 25 C 8 Tamb 55 C Fig 5 Collector emitter saturation voltage as a function of collector current typical values
13. unicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no license or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified 13 Contact information For additional information please visit http www semiconductors philips com For sales office addresses send an email to sales addresses www semiconductors philips com 9397 750 12568 Koninklijke Philips Electronics N V 2004 All rights reserved Product data sheet Rev 01 26 April 2004 11 of 12 Philips Semiconductors PBSS8110Z 14 Contents 1 Product profile oee 1 1 1 General description 1 1 2 Features an mda hne RE 1 1 3 Applications enen 1 1 4 Quick reference data 1 2 Pinning information lesse 2 3 Ordering information sse 2 4 Marking scs ires rr omen 2 5 Limiting values 3 6 Thermal characteristics 4 7 Characteristics lesser 5 8 Package outline llluu u e 9 9 Revision history 10 10 Data sheet status een 11 11 Definitions noa wenen waeren weak 11 12 Disclaimers ans arne die man rome 11 13 Contact information 11 PHILIPS 100 V 1 A NPN low
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PHILIPS PBSS8110Z handbook