philips PBSS5350Z 50 V low VCEsat PNP transistor handbook
Contents
1. PBSS5350Z MGW168 1 2 VBE V 0 8 o 2 0 4 3 0 1071 1 10 102 108 104 Ic mA Vce 2 V 1 Tamb 55 C 2 Tamb 25 C 3 Tamo 150 C Fig 3 Base emitter voltage as a function of collector current typical values 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C 103 MGW169 VCEsat mV 10 1 2 3 10 1 1071 1 10 102 103 104 Ic mA Ic lg 10 Fig 4 Collector emitter saturation voltage as a function of collector current typical values MGW170 0 8 0 6 1071 1 10 102 108 104 Ic mA Io lg 10 1 Tamb 55 C 2 Tamb 25 C 3 Tamo 150 C Fig 5 Base emitter saturation voltage as a function of collector current typical values 2003 May 13 Philips Semiconductors 50 V low Vcesat PNP transistor2. Handbook 2003 May 13 3 Philips Semiconductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z CHARACTERISTICS Tamb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT collector base cut off current emitter base cut off current Vcs 50 V le 0 Vcg 50 V le 0 Tj 150 C Ves 5 V Ic 0 DC current gain Vee 2V Ic 500 mA lc 1 A note 1 lc 2 A note 1 collector emitter saturation voltage Ic 500 mA Ig 50 mA Ic 1A Ig 50 mA Ic 2 A Ip 200 mA note 1 equivalent on resistance base emitter saturation voltage base emitter turn on voltage lc 2 A Ig 200 mA note 1 lIc 2 A Ip 200 mA note 1 Vce 2 V Ic 1 A note 1 transition frequency Ce collector capacitance Ic 100 mA VcE 5V f 100 MHz Vcs 10 V le le 0 f 1 MHz Note 1 Pulse test tp lt 300 us 5 lt 0 02 2003 May 13 Product specification Philips Semiconductors 50 V low Vcesat PNP transistor MGW167 1000 hFE 800 600 400 2 200 3 Vce 2 V 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C current typical values Fig 2 DC current gain as a function of collector
3. MGW171 1000 1 Ic 2 mA 3 800 4 6 6 600 7 8 400 9 10 200 m 12 0 0 0 4 0 8 12 16 2 Vce V Tamb 25 C 1 Ig 3 96mA 5 Ig 2 64mA 9 Ip 1 32 mA 2 IB 3 63mA 6 Ig 2 31 mA 10 Ig 0 99 mA 3 Ig 3 30mA 7 Ig 1 98mA 11 Ig 0 66 mA 4 Ig 2 97mA 8 Ig 1 65mA 12 Ig 0 33 mA Fig 6 Collector current as a function of collector emitter voltage typical values MGU390 10 Ora 10 1 8 107 1 10 102 1083 104 Ic mA l lg 20 Fig 8 Collector emitter equivalent on resistance as a function of collector current typical values 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C 2003 May 13 Product specification PBSS5350Z MGW172 1 2 3 lc 5 A 6 _4 7 8 9 3 10 2 1 0 0 0 4 08 12 186 2 Vce V Tamb 25 C 1 Ig 250mA 5 Ip 150 mA 9 Ig 50 mA 2 IB 225 mA 6 Ip 125 mA 10 Ig 25 mA 3 Ip 200mA 7 Ip 100 mA 4 Ig 175mA 8 Ig 75 mA Fig 7 Collector current as a function of collector emitter voltage typical values Philips Semicon
4. O 0 PBSS53502Z7 I O DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350Z 50 V low Vcesat PNP transistor Product specification 2003 May 13 Supersedes data of 2003 Jan 20 Philips PHILIPS Semiconductors PH l LI F Philips Semiconductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z FEATURES Low collector emitter saturation voltage High collector current capability Ic and Icy High collector current gain hfe at high Ic Higher efficiency leading to less heat generation Reduced PCB area requirements compared to DPAK APPLICATIONS Power management DC DC converters Supply line switching Battery charger Linear voltage regulation LDO Peripheral drivers Driver in low supply voltage applications e g lamps LEDs Inductive load driver e g relays buzzers motors DESCRIPTION PNP low Vcegat transistor in a SOT223 plastic package NPN complement PBSS4350Z MARKING TYPE NUMBER MARKING CODE PBSS5350Z PB5350 QUICK REFERENCE DATA SYMBOL VcEo PARAMETER MAX UNIT collector emitter voltage 50 V 3 A collector current DC peak collector current 5 A RCEsat equivalent on resistance lt 150 mQ PINNING PIN DESCRIPTION base collector emitter collector Fig 1 2003 May 13 2 4 Top view MAM288 Simplified outline SOT223 and symbol Philips Semiconductors Product specif
5. ductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z PACKAGE OUTLINE Plastic surface mounted package collector pad for good heat transfer 4 leads SOT223 detail X 0 2 4mm scale DIMENSIONS mm are the original dimensions nt A A bp b D 3 1 6 7 2 9 6 3 1 8 Mee er REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION JEDEC EIAJ PROJECTION SOT223 SC 73 E Apes 2003 May 13 7 Philips Semiconductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS Development DEFINITION Objective data This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product This data sheet contains data from the product specification Philips Semico
6. fication 50 V low Vcesat PNP transistor PBSS5350Z NOTES 2003 May 13 9 Philips Semiconductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z NOTES 2003 May 13 10 Philips Semiconductors Product specification 50 V low Vcesat PNP transistor PBSS5350Z NOTES 2003 May 13 11 Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2003 SCA75 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613514 04 pp12 Date of release 2003 May 13 Document order number 9397 750 11058 Lott make things better en PHILIPS
7. for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2003 May 13 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors Product speci
8. ication 50 V low Vcesat PNP transistor PBSS5350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VcBo collector base voltage open emitter collector emitter voltage open base emitter base voltage open collector collector current DC eu Peat collector current ease total power dissipation Tamb lt 25 C notes 1 and 3 Tamb lt 25 C notes 2 and 3 storage temperature junction temperature a operating ambient temperature 65 150 C Notes 1 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 1 cm 2 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 6 cm 3 For other mounting conditions see Thermal considerations for SOT223 in the General Part of associated Handbook THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rtn ja thermal resistance from junction to ambient in free air notes 1 and 3 92 K W in free air notes 2 and 3 62 5 Notes 1 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 1 cm 2 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 6 cm 3 For other mounting conditions see Thermal considerations for SOT223 in the General Part of associated
9. nductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification Product data Production CPCN Notes 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may Cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein
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philips PBSS5350Z 50 V low VCEsat PNP transistor handbook