philips PBSS4140T 40 V 1A NPN low VCEsat (BISS) transistor handbook
Contents
1. O 0 PBSS4140TQ OO DISCRETE SEMICONDUCTORS DATA SHEET a PBSS4140T 40V 1A NPN low Vcesat BISS transistor Product specification 2004 Mar 16 Supersedes data of 2001 Jul 13 Philips PHILIPS Semiconductors DH l LI Philips Semiconductors Product specification 40 V 1A NPN low Vcesat BISS transistor FEATURES e Low collector emitter saturation voltage e High current capabilities e Improved device reliability due to reduced heat generation APPLICATIONS e General purpose switching and muting e LCD backlighting e Supply line switching circuits e Battery driven equipment mobile phones video cameras and hand held devices DESCRIPTION NPN low Vcesat transistor in a SOT23 plastic package PNP complement PBSS5140T MARKING TYPE NUMBER MARKING CODE PBSS4140T ZT Note 1 p made in Hong Kong t made in Malaysia W made in China ORDERING INFORMATION PBSS4140T QUICK REFERENCE DATA SYMBOL PARAMETER MAX VcEO collector emitter voltage 40 V lom peak collector current 2 A RCEsat equivalent on resistance lt 500 mQ PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector ji Top view MAM255 Fig 1 Simplified outline SOT23 and symbol TYPE NUMBER PACKAGE PBSS4140T 7 plastic surface mounted package 3 leads DESCRIPTION VERSION SOT23 2004 Mar 16 Philips Semiconductors2. Product specification 40 V 1A PBSS4140T NPN low Vcesat BISS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VcBo collector base voltage open emitter 40 V collector emitter voltage open base emitter base voltage open collector collector current DC 1 peak collector current peak base current total power dissipation Tamb lt 25 C note 1 L erase temperature 150 operating ambient temperature 150 C Notes 1 Device mounted on a printed circuit board single sided copper tinplated standard footprint 2 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 1 cm2 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYPICAL UNIT Rih a thermal resistance from junction in free air note 1 to ambient in free air note 2 Notes 1 Device mounted on a printed circuit board single sided copper tinplated and standard footprint 2 Device mounted on a printed circuit board single sided copper tinplated mounting pad for collector 1 cm2 2004 Mar 16 3 Philips Semiconductors Product specification 40 V 1A NPN low Vcesat BISS transistor een CHARACTERISTICS Tamb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT IcBo collector base cut off Vcs 40 V le 0 A IcEO collector em
3. Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2004 Mar 16 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors a worldwide company Contact information For additional information please
4. d package 3 leads 0 1 Product specification PBSS4140T SOT23 detail X 2mm DIMENSIONS mm are the original dimensions scale UNIT A Ay max D mm 0 1 3 0 2 8 OUTLINE VERSION REFERENCES EUROPEAN JEDEC EIAJ PROJECTION ISSUE DATE SOT23 TO 236AB J 97 02 28 99 09 13 2004 Mar 16 Philips Semiconductors 40 V 1A NPN low Vcesat BISS transistor Product specification PBSS4140T DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS Development DEFINITION Objective data This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to im
5. itter cut off Vce 30 V Ip 0A current emitter base cut off current Veg 5 V Il c 0A hfe DC current gain Vece 5 V lc 1 mA Vcee 5V l c 1A VCEsat collector emitter saturation voltage lc 500 mA Ig 50 mA lc 1 A Ig 100 mA RCEsat equivalent on resistance Ic 500 mA Ig 50 mA note 1 base emitter saturation lc 1 A Ig 100 mA voltage VBEon base emitter turn on Vce 5V l c 1A voltage transition frequency lc 50 mA Vce 10 V f 100 MHz Ce collector capacitance Vcs 10 V le l 0 A f 1 MHz 10 pF Note 1 Pulse test tp lt 300 us 5 lt 0 02 2004 Mar 16 4 Philips Semiconductors 40 V 1A NPN low Vcesat BISS transistor MLD660 1000 hFE 800 600 400 200 HHHH HA HH Vor 5 V 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C Fig 2 DC current gain as a function of collector current typical values Product specification PBSS4140T 10 MLD661 VBE rT TTT TUT PT T T V 1 1 2 3 107 1071 1 10 102 103 104 Ic mA Voce 5V 1 Tamb 55 C 2 Ta
6. mb 25 C 3 Tamb 150 C Fig 3 Base emitter voltage as a function of collector current typical values MLD662 103 VCEsat mV 102 2 10 lc lg 10 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C Fig 4 Collector emitter saturation voltage as a function of collector current typical values MLD663 102 RcEsat Q 10 1 2 1 3 10 1 10 1 1 10 10 2 1078 10 4 Ic mA Ic lg 10 1 Tamb 150 C 2 Tamb 25 C 3 Tamb 55 C Fig 5 Equivalent on resistance as a function of collector current typical values 2004 Mar 16 Philips Semiconductors 40 V 1A NPN low Vcesat BISS transistor MLD664 200 100 0 200 400 600 800 1000 Ic mA Vc 10 V Fig 6 Transition frequency as a function of collector current 2004 Mar 16 Product specification PBSS4140T Philips Semiconductors 40 V 1A NPN low Vcesat BISS transistor PACKAGE OUTLINE Plastic surface mounte
7. prove the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification Product data Production CPCN Notes 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips
8. visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2004 SCA76 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands R75 03 pp9 Date of release 2004 Mar 16 Document order number 9397 750 12434 Let make things better i eee amp PHILIPS
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philips PBSS4140T 40 V 1A NPN low VCEsat (BISS) transistor handbook