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PHILIPS PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 handbook

1. Product data sheet Rev 01 1 November 2005 5 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Table 8 Characteristics continued Tamb 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit dit differential resistance IR 1 mA PESD3V3L2BT 400 Q PESD5VOL2BT 80 Q PESD12VL2BT 200 Q PESD15VL2BT 225 Q PESD24VL2BT 300 Q 1 Non repetitive current pulse 8 20 us exponential decay waveform according to IEC 61000 4 5 2 Measured from pin 1 to 3 or 2 to 3 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 6 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 104 006aaa531 12 001aaa193 Ppp Ppp w Ppp 25 C 103 0 8 1 2 102 0 4 10 0 1 10 102 108 104 0 50 100 150 200 tp us Tj C Tamb 25 C 1 PESD3V3L2BT and PESD5VOL2BT 2 PESD12VL2BT PESD15VL2BT PESD24VL2BT Peak pulse power as a function of exponential pulse duration tp typical values Fig 4 Relative variation
2. 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 8 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 ESD TESTER 4 GHz DIGITAL RG 223 U OSCILLOSCOPE 450 Q 50 Q coax 10x ATTENUATOR n D U T Device IEC 61000 4 2 network Under Cz 150 pF Rz 3302 Test vertical scale 200 V div vertical scale 20 V div horizontal scale 50 ns div horizontal scale 50 ns div PESD24VL2BT GND PESD15VL2BT GND PESD12VL2BT GND PESD5VOL2BT GND GND PESD3V3L2BT GND unclamped 1 kV ESD voltage waveform clamped 1 kV ESD voltage waveform IEC 61000 4 2 network IEC 61000 4 2 network vertical scale 20 V div horizontal scale 50 ns div GND GND PESD3V3L2BT GND L PESD5VOL2BT GND I PESD12VL2BT GND PESD15VL2BT GND PESD24VL2BT vertical scale 200 V div horizontal scale 50 ns div unclamped 1 kV ESD voltage waveform clamped 1 kV ESD voltage waveform IEC 61000 4 2 network IEC 61000 4 2 network 006aaa162 Fig 9 ESD clamping test setup and waveforms 9397 750 14034 Ko
3. C 1 Non repetitive current pulse 8 20 us exponential decay waveform according to IEC 61000 4 5 2 Measured from pin 1 to 3 or 2 to 3 Table6 ESD maximum ratings Symbol Parameter Conditions Min Max Unit Vesp electrostatic discharge IEC 61000 4 2 11 2 voltage contact discharge PESD3V3L2BT 30 kV PESD5VOL2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 23 kV PESDxL2BT series HBM MIL STD883 10 kV 1 Device stressed with ten non repetitive ESD pulses 2 Measured from pin 1 to 3 or 2 to 3 Table 7 ESD standards compliance ESD Standard Conditions IEC 61000 4 2 level 4 ESD gt 15 kV air gt 8 kV contact HBM MIL STD883 class 3 gt 4kV 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 3 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 IEC 61000 4 5 120 001aaa630 Ipp 100 lpp 8 us 80 et 50 lpp 20 us 40 0 0 10 20 30 40 t us Fig 1 8 20 us pulse waveform according to 001aaa631 Ipp 100 90 4 10 7 t 0 7 ns to 1 ns t 30 ns gt a 60 ns gt l Fig 2 ESD pulse waveform according to IEC 61000 4 2 9397 750 14034 Koninklijke Philips Electronics N V 2005 All r
4. Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 11 Data sheet status Level Data sheet status Product status 28 Definition l Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Il Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product Ill Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification CPCN 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status det
5. ds 1 1 3 Applications eneen 1 1 4 Quick reference data 1 2 Pinning information 2 3 Ordering information 2 4 Marking saar oa nn een ee ee aes 2 5 Limiting values 3 6 Characteristics ji 6 tease nee harden me 5 7 Application information 10 8 Package outline 0 000 eee ee eee 11 9 Packing information 11 10 Revision history 12 11 Data sheet statuS 000 e ee ee eee 13 12 Definitions 0 0c eee eee eee 13 13 Disclaimers nanne cece teami eee 13 14 Trademarks eee 13 15 Contact information 00 05 13 PHILIPS Koninklijke Philips Electronics N V 2005 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Date of release 1 November 2005 Document number 9397 750 14034 Published in The Netherlands
6. O O PESD12VL2BT J 0 0 PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev 01 1 November 2005 1 Product profile Product data sheet B 1 1 1 2 1 3 1 4 General description Low capacitance double bidirectional ElectroStatic Discharge ESD protection diodes in a SOT23 small Surface Mounted Device SMD plastic package designed to protect two signal lines from the damage caused by ESD and other transients Features m ESD protection of two lines B Max peak pulse power Ppp 350 W B Low clamping voltage Vc_ 26 V B Small SMD plastic package Applications B Computers and peripherals B Audio and video equipment B Cellular handsets and accessories Quick reference data Table 1 Quick reference data Ultra low leakage current Inu lt 90 nA ESD protection up to 23 kV IEC 61000 4 2 level 4 ESD IEC 61000 4 5 surge Ipp 15 A Communication systems Portable electronics Subscriber Identity Module SIM card protection Symbol Parameter Conditions Min Typ Max Unit Vrwm reverse standoff voltage PESD3V3L2BT 3 3 V PESD5VOL2BT 5 0 V PESD12VL2BT 12 V PESD15VL2BT 15 V PESD24VL2BT 24 V Ca diode capacitance Vr 0 V f 1 MHz _PESD3V3L2BT 101 pF PESD5VOL2BT 75 pF PESD12VL2BT 19 pF PESD15VL2BT 16 pF PESD24VL2BT 11 pF PHILIPS Philips Semiconductors PESDxL2BT series Low capacitance double bidirec
7. ermines the data sheet status 12 Definitions Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 13 Disclaimers Life support These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors 15 Contact information customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulti
8. ights reserved Product data sheet Rev 01 1 November 2005 4 of 14 Philips Semiconductors PESDxL2BT series f Low capacitance double bidirectional ESD protection diodes in SOT23 6 Characteristics Table 8 Characteristics Tamb 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VRWwM reverse standoff voltage PESD3V3L2BT 3 3 V PESD5VOL2BT 5 0 V PESD12VL2BT 12 V PESD15VL2BT 15 V PESD24VL2BT 24 V lam reverse leakage current PESD3V3L2BT Vrwm 3 3 V 0 09 2 uA PESD5VOL2BT Vawn 5 0 V 0 01 1 uA PESD12VL2BT Vprwm 12 V lt 1 50 nA PESD15VL2BT Vrwm 15 V lt 1 50 nA PESD24VL2BT Vrwm 24 V lt 1 50 nA VBR breakdown voltage IR 5 mA PESD3V3L2BT 5 8 6 4 6 9 V PESD5VOL2BT 7 0 7 6 8 2 V PESD12VL2BT 14 2 15 8 16 7 V PESD15VL2BT 17 1 18 8 203 V PESD24VL2BT 25 4 27 8 303 V Ca diode capacitance Vr 0 V f 1 MHz PESD3V3L2BT 101 pF PESD5VOL2BT 75 pF PESD12VL2BT 19 pF PESD15VL2BT 16 pF PESD24VL2BT 11 pF VeL clamping voltage 01e PESD3V3L2BT Ipp 1 A 8 V Ipp 15 A 26 V PESD5V0L2BT Ipp 1 A 10 V Ipp 13 A 28 V PESD12VL2BT Ipp 1A 20 V Ipp 5 A 37 V PESD15VL2BT Ipp 1 A 25 V Ipp 5 A 44 V PESD24VL2BT Ipp 1 A 40 V Ipp 3A 70 V 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved
9. nd planes should be used whenever possible For multilayer PCBs use ground vias 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 10 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 8 Package outline PN 30 Dimensions in mm TT 04 11 04 Fig 11 Package outline SOT23 TO 236AB 9 Packing information Table 9 Packing methods The indicated xxx are the last three digits of the 12NC ordering code L Type number Package Description Packing quantity 3000 10000 PESD3V3L2BT SOT23 4 mm pitch 8 mm tape and reel 215 235 PESD5VOL2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 1 For further information and the availability of packing methods see Section 15 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved 11 of 14 Product data sheet Rev 01 1 November 2005 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 10 Revision history Table 10 Revision history PESDXL2BT SER 1 20051101 Product data sheet 9397 750 14034 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 12 of 14 Philips
10. ng from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no license or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified 14 Trademarks Notice All referenced brands product names service names and trademarks are the property of their respective owners For additional information please visit http www semiconductors philips com For sales office addresses send an email to sales addresses www semiconductors philips com 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 13 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 16 Contents 1 Product profile eeen 1 1 1 General description 1 1 2 Features oeri enden dee nee dank
11. ninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 9 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 7 Application information The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses The PESDxL2BT series may be used on lines where the signal polarities are above and below ground The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8 20 us waveform line 1 to be protected line 2 to be protected PESDxL2BT T GND 006aaa163 Fig 10 Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD Electrical Fast Transient EFT and surge transients The following guidelines are recommended 1 Place the PESDxL2BT as close to the input terminal or connector as possible 2 The path length between the PESDxL2BT and the protected line should be minimized 3 Keep parallel signal paths to a minimum 4 Avoid running protected conductors in parallel with unprotected conductors 5 Minimize all Printed Circuit Board PCB conductive loops including power and ground loops 6 Minimize the length of the transient return path to ground 7 Avoid using shared transient return paths to a common ground point 8 Grou
12. of peak pulse power as a function of junction temperature typical values 7 110 006aaa06 80 70 60 50 oO zi No wo D a Vr V Tamb 25 C f 1 MHz 1 PESD3V3L2BT 2 PESD5VOL2BT Fig 5 Diode capacitance as a function of reverse voltage typical values 20 006aaa068 12 o a oO 15 20 25 Vp V Tamb 25 C f 1 MHz 1 PESD12VL2BT 2 PESD15VL2BT 3 PESD24VL2BT Diode capacitance as a function of reverse voltage typical values 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 7 of 14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 lpp 10 006aaa069 ee 1 IRM 25 C VeL VBR VRwu 1 Vrwu Var VoL iR Ker 10 1 lpp 100 50 0 50 100 150 Tj C 006aaa676 1 PESD3V3L2BT PESD5VOL2BT PESD12VL2BT PESD15VL2BT and PESD24VL2BT Ipm lt 20 nA Tj 150 C Fig 7 Relative variation of reverse leakage currentas Fig 8 V I characteristics for a bidirectional ESD a function of junction temperature typical protection diode values 9397
13. tional ESD protection diodes in SOT23 2 Pinning information Table 2 Pinning 1 cathode 1 cathode 2 double cathode 2 006aaa155 3 Ordering information Table 3 Ordering information PESD3V3L2BT plastic surface mounted package 3 leads SOT23 PESD5VOL2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4 Marking Table 4 Marking codes PESD3V3L2BT V3 PESD5VOL2BT var PESD12VL2BT V5 PESD15VL2BT Vve PESD24VL2BT V7 1 made in Hong Kong p made in Hong Kong t made in Malaysia W made in China 9397 750 14034 Koninklijke Philips Electronics N V 2005 All rights reserved Product data sheet Rev 01 1 November 2005 2of14 Philips Semiconductors PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 5 Limiting values Table 5 Limiting values In accordance with the Absolute Maximum Rating System IEC 60134 Symbol Parameter Conditions Min Max Unit Ppp peak pulse power tp 8 20 us 1 2 PESD3V3L2BT 350 Ww PESD5VOL2BT 350 Ww PESD12VL2BT 200 Ww PESD15VL2BT z 200 W PESD24VL2BT 200 W Ipp peak pulse current tp 8 20 us 01 PESD3V3L2BT 15 A PESD5VOL2BT 13 A PESD12VL2BT 5 A PESD15VL2BT 5 A PESD24VL2BT 3 A Tj junction temperature 150 C Tamb ambient temperature 65 150 C Da storage temperature 65 150

PHILIPS PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 handbook

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