Omnirel OM6214SS OM6215SS OM6216SS OM6217SS handbook
Contents
1. Crawford Street Leominster MA 01453 USA 508 534 5776 FAX 508 537 42462. 0 0 OMe214S9 OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V Dual High Current N Channel MOSFETs FEATURES e Two Isolated MOSFETs In A Hermetic Metal Package e Fast Switching Low Drive Current Ease of Paralleling For Added Power Low Roson e Available Screened To MIL S 19500 TX TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology They are ideally suited for Military requirements where small size high performance and high reliability are required and in applications such as switching power supplies motor controls inverters choppers audio amplifiers and high energy pulse circuits MAXIMUM RATINGS PART NUMBER Vos Roson buo OM6214SS 100V 065 30A OM6215SS 200V 095 25A OM6216SS 400V 3 15A OM6217SS 500V 4 13A SCHEMATIC CONNECTION DIAGRAM 1 6 DRAIN DRAIN s Ro g R 3 4 SOURCE SOURCE 2 411 H FJ Superssd s 407 R3 3 1 109 Omnirel He OM6214SS OM6217SS Z lo O Aynq dasuNOg UPIM SNd SAL sind L Z PA Q Anq oesugog YIPIM slnd 1s 1 sind L Su 001 Spip Suy 001 Spip S1 41 9 OGL L su ose Ow AIBAOD9Y BSJBADY ji S FO OGL L su 00r OWI AJBAOD
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6. nirel amp 3 1 111 OM6214SS OM6217SS ABSOLUTE MAXIMUM RATINGS Tc 25 C unless otherwise noted Parameter OM6214SS OM6215SS OM6216SS OM6217SS Units Vos Drain Source Voltage 100 200 400 500 V Voar Drain Gate Voltage Res 1 M 100 200 400 500 V lb Tg 25 C Continuous Drain Current 30 25 15 13 A Ip Tg 100 C Continuous Drain Current 20 16 9 8 A lom Pulsed Drain Current 140 100 60 52 A Pp Tc 25 C Maximum Power Dissipation 125 125 125 125 w Py Tc 100 C Maximum Power Dissipation 50 50 50 50 w Junction To Case Linear Derating Factor 1 0 1 0 1 0 1 0 wc Junction To Ambient Linear Derating Factor 025 025 025 025 W C T Operating and T stg Storage Temperature Range 55 to 150 55 to 150 55 to 150 55 to 150 C Lead Temperature 1 16 from case for 10 secs 300 300 300 300 G 1 Pulse Test Pulse width 300 usec Duty Cycle 2 THERMAL RESISTANCE Per FET at T 25 C Rinc Junction to Case 1 0 C W Rinsa Junction to Ambient 40 C W Free Air Operation POWER DERATING Per Device MECHANICAL OUTLINE 2 1 375 s 040 3 1 ap F 770 302 F lt Pa 2 18 FY O 265 150 DIA 752 lt THRU 2 REF 7p PLACES 487 e 500 IN o oO 200TYP be s 140 TYP 25 50 75 100 125 150 175 k 1 000 REF 060 DIA TYP gt 270 Tc CASE TEMPERATURE C 6 PLACES MAX A Omnirel 104 205
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