DYNEX DS2012SF Rectifier Diode handbook
Contents
1. 0 0 D amp r OO BYNCX sonal SS SEMICONDUCTOR Rectifier Diode Replaces September 2001 version DS4191 4 0 DS4548 4 1 December 2001 FEATURES KEY PARAMETERS E Double Side Cooling Voru 6000V E High Surge Capability l 1320A F AV l 16500A FSM APPLICATIONS Rectification Freewheel Diode DC Motor Control Power Supplies Welding Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Conditions Reverse Voltage DS2012SF60 Outline type code F See Package Details for further information Fig 1 Package outline DS2012SF55 Lower voltage grades available ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table e g DS2012SF59 Note Please use the complete part number when ordering and quote this number in any future correspondance relating to your order 1 7 www dynexsemi com DS2012SF CURRENT RATINGS T_ 75 C unless otherwise stated case Symbol Parameter Conditions ES iwCKX SEMICONDUCTOR Double Side Cooled Mean forward current Half wave resistive load RMS value Continuous direct forward current Single Side Cooled Anode side Mean forward current Half wave resistive load RMS value Symbol Continuous direct forward current unless otherwise stated Parameter Conditions Double Side Co2. 8 nom Nominal weight 450g Clamping force 19 6kN 10 Package outline type code F Note 1 Package maybe supplied with pins and or tags 6 7 www dynexsemi com SEMICOND TTO BYNCX DS2012SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor and has developed a flexible range of heatsink clamping systems in line with advances in device types and the voltage and current capability of our semiconductors We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution PACs DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation The PACs range offers a varied selection of pre loaded clamps to suit all of our manufactured devices This include cube clamps for single side cooling of T 22mm Clamps are available for single or double side cooling with high insulation versions for high voltage assemblies Please refer to our application note on device clamping AN4839 HEATSINKS Power Assembly has its own proprietary range of extr
3. DOCUMENTATION NOT FOR RESALE PRINTED IN UNITED KINGDOM Datasheet Annotations Dynex Semiconductor annotate datasheets in the top right hard corner of the front page to indicate product status The annotations are as follows Target Information This is the most tentative form of information and represents a very preliminary specification No actual design work on the product has been started Preliminary Information The product is in design and development The datasheet represents the product as it is understood but details may change Advance Information The product design is complete and final characterisation for volume production is well in hand No Annotation The product parameters are fixed and the product is available to datasheet specification This publication is issued to provide information only which unless agreed by the Company in writing may not be used applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned No warranty or guarantee express or implied is made regarding the capability performance or suitability of any product or service The Company reserves the right to alter without prior notice the specification design or price of any product or service Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specif
4. ca Tease 150 C case Total stored charge Peak recovery current 2000A dl dt 3A us Tease 150 C Vp 100V case Threshold voltage AtT 150 C Slope resistance At T 150 C CURVES Measured under pulse conditions A Mean power dissipation W Instantaneous forward current IF dc Half wave 10 20 500 1000 1500 2000 Mean forward current levy A Instantaneous forward voltage Vp V Fig 2 Maximum limit forward characteristics Fig 3 Dissipation curves Vey Equation Where A 0 819645 B 0 13673 Vey A Bin I C 1 D VI C 5 73 x 10 D 0 042435 these values are valid for T 125 C for l 500A to 5000A 4 7 www dynexsemi com G SYINCX DS2012SF SEMICOND TOR Conditions Conditions Tj 150 C Tj 150 C VR 100V Vp 100V r lp 2000A lp 2000A A So oO oO c i D 6 o 2 w lt ke D 2 faj 2 op Reverse recovery current l lF As TAVA IRM 1 0 10 100 1 0 10 Rate of decay of forward current dl dt A us Rate of decay of for
5. ic piece of equipment It is the user s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user All products and materials are sold and services provided subject to the Company s conditions of sale which are available on request All brand names and product names used in this publication are trademarks registered trademarks or trade names of their respective owners 7 7 www dynexsemi com
6. oled Mean forward current Half wave resistive load T s 100 C RMS value Torco 100 C case Continuous direct forward current Tage 100 C case Single Side Cooled Anode side Mean forward current 100 C case Half wave resistive load T RMS value Tage 100 C case 2 7 Continuous direct forward current T_ 100 C case www dynexsemi com G SYINCX DS2012SF SEMICOND TTO SURGE RATINGS Parameter Conditions Max Surge non repetitive forward current 10ms half sine T____ 150 C 13 5 case l t for fusing VR 50 Vpru 1 4 sine 0 92 x 10 Surge non repetitive forward current 10ms half sine Tse 150 C 16 5 l t for fusing 1 425 x 10 THERMAL AND MECHANICAL DATA Parameter Conditions Double side cooled dc Thermal resistance junction to case Anode dc Single side cooled Cathode dc Double si Clamping force 19 5kN ouble side with mounting compound Thermal resistance case to heatsink Single side Forward conducting Virtual junction temperature Reverse blocking Storage temperature range Clamping force 3 7 www dynexsemi com DS2012SF CHARACTERISTICS Parameter Conditions ESv iwCKX SEMICONDUCTOR Forward voltage At 3400A peak Tase 25 C case Peak reverse current At Va
7. uded aluminium heatsinks They have been designed to optimise the performance or our semiconductors Data with respect to air natural forced air and liquid cooling with flow rates is available on request For further information on device clamps heatsinks and assemblies please contact your nearest Sales Representative or Customer Services 4 Ese NEX http www dynexsemi com SEMICONDUCTOR e mail power_solutions dynexsemi com HEADQUARTERS OPERATIONS CUSTOMER SERVICE CENTRES DYNEX SEMICONDUCTOR LTD Mainland Europe Tel 33 0 1 58 04 91 00 Fax 33 0 1 46 38 51 33 Doddington Road Lincoln North America Tel 613 723 7035 Fax 613 723 1518 Lincolnshire LN6 3LF United Kingdom UK Scandinavia amp Rest Of World Tel 44 0 1522 500500 Fax 44 0 1522 500020 Tel 00 44 0 1522 500500 Fax 00 44 0 1522 500550 SALES OFFICES Mainland Europe Tel 33 0 1 58 04 91 00 Fax 33 0 1 46 38 51 33 DYNEX POWER INC North America Tel 613 723 7035 Fax 613 723 1518 Toll Free 1 888 33 DYNEX 39639 99 Bank Street Suite 410 Tel 949 733 3005 Fax 949 733 2986 Ottawa Ontario Canada K1P 6B9 UK Scandinavia amp Rest Of World Tel 44 0 1522 500500 Fax 44 0 1522 500020 Tel 613 723 7035 Fax 613 723 1518 These offices are supported by Representatives and Distributors in many countries world wide Toll Free 1 888 33 DYNEX 39639 Dynex Semiconductor 2001 Publication No DS4191 4 Issue No 4 1December 2001 TECHNICAL
8. ward current dl dt A us Fig 4 Total stored charge Fig 5 Maximum reverse recovery current 90L X Sz NJLA kl Peak half sine forward current KA Effective thermal resistance Conduction Junction to case C W Thermal Impedance junction to case C W oO pam Double side Single side d c 0 022 0 038 Halfwave 0 024 0 040 3 phase 120 0 026 0 042 6 phase 60 0 027 0 043 0 1 1 0 Cycles at 50Hz Time s Duration Fig 6 Surge non repetitive forward current vs time Fig 7 Maximum limit transient thermal impedance with 50 Virum at T 175 C junction to case 5 7 www dynexsemi com DS2012SF EYNCECX SEMICONDUCTOR PACKAGE DETAILS For further package information please contact your nearest Customer Service Centre All dimensions in mm unless stated otherwise DO NOT SCALE Hole 3 6x2 0 deep in both electrodes ia L Cathode 76 max 48 nom 4
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DYNEX DS2012SF Rectifier Diode handbook