PHILIPS PMEG2010AEB 20 V 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package handbook
Contents
1. O O PMEG2010AEB 0O 0 DISCRETE SEMICONDUCTORS DATA SHEET PMEG2010AEB 20 V 1 A ultra low Ve MEGA Schottky barrier rectifier in 50D523 package Product specification 2003 Dec 03 Philips PHILIPS Semiconductors PH l LI E Philips Semiconductors Product specification 20 V 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB FEATURES e Forward current 1 0 A e Reverse voltage 20 V e Ultra low forward voltage e Ultra small SMD package APPLICATIONS e Low voltage rectification e High efficiency DC DC conversion e Voltage clamping e Inverse polarity protection e Low power consumption applications DESCRIPTION Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a SOD523 SC 79 ultra small plastic SMD package ORDERING INFORMATION QUICK REFERENCE DATA SYMBOL PARAMETER IF forward current VR reverse voltage 20 V PINNING 1 cathode 2 anode d P Top view col001 Marking code L6 The marking bar indicates the cathode Fig 1 Simplified outline SOD523 SC 79 and symbol TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PMEG2010AEB plastic surface mounted package 2 leads SOD523 RELATED PRODUCTS DESCRIPTION FEATURE TYPE PMEG2005EB 0 5 A 20 V very low Ve MEGA Schottky rectifier Lowe2. eliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification Product data Production CPCN Notes 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the li
3. ificant part of the total power losses Nomograms for determination of the reverse power losses Pr and lFavy rating will be available on request Notes 3 Solder point of cathode tab 2003 Dec 03 3 Philips Semiconductors Product specification 20 V 1 A ultra low Ve MEGA Schottky ata PMEG2010AEB barrier rectifier in SOD523 package CHARACTERISTICS Tamb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP MAX UNIT forward voltage lF 0 1 mA 30 60 mV lF 10 mA 140 190 mV IF 1000 mA 510 620 mV continuous reverse current 0 6 VR 20 V note 1 0 32 1 5 mA diode capacitance 25 pF 1 Pulse test tp lt 300 us lt 0 02 Note 2003 Dec 03 4 Philips Semiconductors Product specification 20 V 1 A ultra low VF MEGA Schottky ae PMEG2010AEB barrier rectifier in SOD523 package GRAPHICAL DATA 103 com001 5 MLE228 R 10 E A mA La ia 1 102 108 1 3 2 aie 3 i 10 1 1 3 10 1 1071 0 0 2 0 4 0 6 0 8 0 8 16 24 VF V VR V 1 Tamb 85 C 1 Tamb 85 C 2 Tamb 25 C 2 Tamb 25 C 3 Tamb 40 C 3 Tamb 40 C Fig 2 Forward c
4. lips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2003 SCA75 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands R76 01 pp8 Date of release 2003 Dec 03 Document order number 9397 750 11911 Lett make things better i eee S5 PHILIPS
5. miting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2003 Dec 03 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Phi
6. r Ir in same package PMEG2010EA 1 A 20 V very low Ve MEGA Schottky rectifier Lower forward current lower IR SOD323 SC76 2003 Dec 03 Philips Semiconductors Product specification 20 V 1 A ultra low Ve MEGA Schottky RS PMEG2010AEB barrier rectifier in SOD523 package LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VR continuous reverse voltage 20 V continuous forward current Ts lt 55 C A repetitive peak forward current tp lt 1ms 5 lt 0 5 A non repetitive peak forward current t 8 ms square wave A storage temperature junction temperature Tamb operating ambient temperature note 1 65 150 C Note 1 For Schottky barrier rectifiers thermal run away has to be considered as in some applications the reverse power losses Pr are a significant part of the total power losses Nomograms for determination of the reverse power losses Pr and Ir av rating will be available on request THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to in free air notes 1 and 2 400 K W ambient thermal resistance from junction to notes 2 and 3 75 K W soldering point 1 Refer to SOD523 SC 79 standard mounting conditions 2 For Schottky barrier rectifiers thermal run away has to be considered as in some applications the reverse power losses PR are a sign
7. urrent as a function of forward Fig 3 Reverse current as a function of reverse voltage typical values voltage typical values com002 oa oa N f 1 MHz Tamb 25 C Fig 4 Diode capacitance as a function of reverse voltage typical values 2003 Dec 03 5 Philips Semiconductors Product specification 20 V 1 A ultra low VF MEGA Schottky at PMEG2010AEB barrier rectifier in SOD523 package PACKAGE OUTLINE Plastic surface mounted package 2 leads SOD523V 0 5 scale DIMENSIONS mm are the original dimensions UNIT A b D p c 0 65 0 34 0 17 1 25 0 58 0 26 0 11 1 15 mm Note 1 The marking bar indicates the cathode OUTLINE REFERENCES EUROPEAN VERSION JEDEC JEITA PROJECTION ISSUE DATE SOD523V SC 79 ET 02 04 19 2003 Dec 03 6 Philips Semiconductors 20 V 1 A ultra low Ve MEGA Schottky barrier rectifier in SOD523 package Product specification PMEG2010AEB DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS 3 Development DEFINITION Objective data This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Pr
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PHILIPS PMEG2010AEB 20 V 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package handbook