PHILIPS 74HC04; 74HCT04 Hex inverter handbook
Contents
1. DIMENSIONS mm are the original dimensions A 2 UNIT max A1 A2 As bp E 0 15 0 95 0 30 0 2 4 5 mm 11 905 080 025 o19 o1 49 43 Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic interlead protrusions of 0 25 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC JEITA PROJECTION SOT402 1 MO 153 E il 4 ISSUE DATE 2003 Jul 23 17 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 DHVQFN14 plastic dual in line compatible thermal enhanced very thin quad flat package no leads 14 terminals body 2 5 x 3 x 0 85 mm SOT762 1 SIC detail X terminal 1 index area terminal 1 index area DIMENSIONS mm are the original dimensions AQ UNT max M b D D EU En 0 05 0 30 3 1 1 65 26 1 15 mm 1 looo 018 0 29 135 24 085 Note 1 Plastic or metal protrusions of 0 075 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION JEDEC JEITA PROJECTION SOT762 1 MO 241 EH Q2. C tpHr tpLH propagation delay see Figs 6 and 7 2 0 105 ns nA to nY 4 5 21 ns EE fe tTHL TLH output transition time see Figs 6 and 7 2 0 95 ns so E 6 m Tamb 40 to 125 C tpHr tpLH propagation delay see Figs 6 and 7 2 0 130 ns nA to nY 4 5 26 ns 6 0 L E 22 ns tTHL tTLH output transition time see Figs 6 and 7 2 0 110 ns 6 0 19 ns 2003 Jul 23 11 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 Family 74HCT04 GND 0 V t tp lt 6 0 ns C 50 pF TEST CONDITIONS SYMBOL PARAMETER MIN TYP MAX UNIT WAVEFORMS Voc V Tamb 25 C tpHL tPLH propagation delay see Figs 6 and 7 4 5 10 19 ns nA to nY tru tr n output transition time see Figs 6 and 7 4 5 7 15 ns Tamb 40 to 85 C tpHL tpLH propagation delay see Figs 6 and 7 4 5 24 ns nA to nY tTHL tTLH output transition time see Figs 6 and 7 4 5 19 ns Tamb 40 to 125 C tpHL tPLH propagation delay see Figs 6 and 7 4 5 29 ns nA to nY tTHL TLH output transition time see Figs 6 and 7 4 5 22 ns AC WAVEFORMS VI nA input GND VOH nY output VoL Eco a CHO MNA722 For 74HC04 Vy 50 V GND to Voc For 74HCTO4 Vy 1 3 V V GND to 3 0 V Fig 6 Waveforms showing the data input nA to data output nY propagation delays and the output transition times 2003 Jul 23 12 Philips Semiconductors Product specification Hex invert
3. apps ISSUE DATE 2003 Jul 23 18 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS 3 Development DEFINITION Objective data This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification Product data Production CPCN Notes 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com 3 Fordata sheets describing multiple type numb
4. or GND loc quiescent supply current Vi Voc or GND lo 0 6 0 20 uA 2003 Jul 23 7 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 TEST CONDITIONS OTHER Vcc V SYMBOL PARAMETER Tamb 40 to 125 C HIGH level input voltage LOW level input voltage HIGH level output voltage V Viu or Vi lo 20 uA lo 20 uA lo 20 uA lo 4 0 mA lo 5 2 mA LOW level output voltage Vi Viu or Vy lo 20 uA lo 20 uA lo 20 uA lo 4 0 mA lo 5 2 mA input leakage current Vi Vcc or GND 3 state output OFF current Vi Vi or Vi Vo Voc or GND loc quiescent supply current Vi Voc or GND lo 0 6 0 40 uA 2003 Jul 23 8 Philips Semiconductors Hex inverter Type 74HCT04 At recommended operating conditions voltages are referenced to GND ground 0 V Product specification 74HC04 74HCT04 SYMBOL CE 25 C PARAMETER TEST CONDITIONS OTHER Vcc V MIN TYP MAX UNIT HIGH level input CE LOW level input voltage 4 5 to 5 5 HIGH level output voltage LOW level output voltage V Vin or Vip lo 20 uA lo 4 0 mA Vi Vin Or Vit lo 20 uA lo 4 0 MA input leakage current V Vec or GND 3 state output OFF current Vi Vin or Vi Vo Voc or GND lo 0 quiescent supply current V Voc or GND Be 0 wo Vcc 2 1 V 4 5t0
5. 5 5 120 LE 0 Tamb 40 to 85 C HIGH level input voltage 4 5 to 5 5 2 0 LOW level input voltage 4 5 0 5 5 l HIGH level output voltage Vi Vin or Vip lo 20 uA lo 4 0 mA LOW level output voltage input leakage current Vi Vin or Vip lo 20 uA lo 2 4 0mA Vi Vec or GND 3 state output OFF current Vi Vin or Vy Vo Voc or GND lo 0 2003 Jul 23 Philips Semiconductors Hex inverter SYMBOL PARAMETER TEST CONDITIONS OTHER Vec V Product specification 74HC04 74HCT04 ur 40 to 125 C LOW level output voltage Vi or Vip us 20 uA lo 4 0 mA Vi Vin Or Vip lo 20 uA lo 4 0 mA input leakage current 3 state output OFF current quiescent supply current V Voc or GND Vi Vin or Vy Vo Voc or GND lo 0 VI Voc or GND lo 0 2003 Jul 23 additional supply current per input Vi Voc 2 1 V lo 0 10 Philips Semiconductors Hex inverter AC CHARACTERISTICS Family 74HC04 GND 0 V tr tp lt 6 0 ns C 50 pF SYMBOL PARAMETER TEST CONDITIONS WAVEFORMS Product specification 74HC04 74HCT04 Tamb 25 C tpur tpLH propagation delay see Figs 6 and 7 2 0 25 85 ns nA to nY 4 5 9 17 ns 6 0 7 1 ns tTHL tTLH output transition time see Figs 6 and 7 2 0 19 75 ns 4 5 7 15 ns Tamb 40 to 85
6. OO 74HCO04 Oo INTEGRATED CIRCUITS DATA SHEET 74HC04 74HCT04 Hex Inverter Product specification 2003 Jul 23 Supersedes data of 1993 Sep 01 Philips PHILIPS Semiconductors PH l LI L Philips Semiconductors Product specification i Hex inverter 74HC04 74HCT04 FEATURES DESCRIPTION e Complies with JEDEC standard no 8 1A The 74HC HCT04 are high speed Si gate CMOS devices e ESD protection and are pin compatible with low power Schottky TTL HBM EIA JESD22 A114 A exceeds 2000 V LSTTL They are specified in compliance with JEDEC MM EIA JESD22 A115 A exceeds 200 V standard no 7A The 74HC HCT04 provide six inverting buffers e Specified from 40 to 85 C and 40 to 125 C QUICK REFERENCE DATA GND 0 V Tamb 25 C t t 6 0 ns TYPICAL CONDITIONS UNIT HC04 HCTO4 tpu tpLH propagation delay nA to nY C 15 pF Vcg 5 V Ci input capacitance 3 5 3 5 SYMBOL PARAMETER Cpp power dissipation capacitance per gate notes 1 and 2 ee qt Notes 1 Cpp is used to determine the dynamic power dissipation Pp in uW Pp Opp x Voc x fix N C x Voc x fo where f input frequency in MHz fo output frequency in MHz C output load capacitance in pF Vcc supply voltage in Volts N total load switching outputs X CL x Vcc x fo sum of the outputs 2 For 74HC04 the condition is V GND to Vcc For 74HCT04 the condition is V GND to Vcc 1 5 V FUNCTION TABLE
7. See note 1 INPUT OUTPUT Note 1 H HIGH voltage level L LOW voltage level 2003 Jul 23 2 Philips Semiconductors Hex inverter ORDERING INFORMATION TYPE NUMBER Product specification 74HC04 74HCT04 PACKAGE TEMPERATURE RANGE PINS PACKAGE MATERIAL 14 14 DIP14 DIP14 plastic plastic SOT27 1 14 SO14 14 SO14 14 SSOP14 plastic plastic plastic SOT108 1 SOT108 1 SOT337 1 14 14 SSOP14 TSSOP14 plastic plastic SOT337 1 SOT402 1 14 14 TSSOP14 DHVQFN14 plastic plastic SOT402 1 SOT762 1 74HCO4N 40 to 125 C 74HCTO4N 40 to 125 C 74HC04D 40 to 125 C 74HCTO4D 40 to 125 C 74HC04DB 40 to 125 C 74HCTO4DB 40 to 125 C 74HCO4PW 40 to 125 C 74HCTO4PW 40 to 125 C 74HC04BQ 40 to 125 C 74HCTO4BQ 40 to 125 C PINNING PIN SYMBOL DESCRIPTION 1A data input data output GND 1Y 2A data input 3A data input ground 0 V 4Y data output data input data output data input data output 14 3 5 7 9 10 11 12 Vcc data input supply voltage 2003 Jul 23 14 DHVQFN14 Fig 1 T SSOP14 plastic SOT762 1 MNA340 Vcc 6A 6Y 5A 5Y 4A 4Y Pin configuration DIP14 SO14 and Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 gt lt N YYYYYY m 2 N l
8. any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613508 03 pp20 Date of release 2003 Jul 23 Document order number 9397 750 11256 Lett make things bello iD S amp PHILIPS
9. ed from the original mm dimensions UNIT Ar A2 A3 c DM EM e He 0 25 8 75 4 0 6 2 0 19 8 55 3 8 d 5 8 m 0 0100 0 35 0 16 inches 0 0075 0 34 0 15 Note 1 Plastic or metal protrusions of 0 15 mm 0 006 inch maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC JEITA PROJECTION SOT108 1 076E06 MS 012 E Q Ee ISSUE DATE 2003 Jul 23 15 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 SSOP14 plastic shrink small outline package 14 leads body width 5 3 mm SOT337 1 Al Lp L detail X A2 Az 1 80 1 65 Note 1 Plastic or metal protrusions of 0 25 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION JEDEC JEITA PROJECTION SOT337 1 MO 150 E ii j ISSUE DATE 2003 Jul 23 16 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 TSSOP14 plastic thin shrink small outline package 14 leads body width 4 4 mm SOT402 1 pin 1 index ae detail X
10. er 74HC04 74HCT04 PULSE GENERATOR MGK565 Definitions for test circuit C Load capacitance including jig and probe capacitance Rr Termination resistance should be equal to the output impedance Z of the pulse generator Fig 7 Load circuitry for switching times 2003 Jul 23 13 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 PACKAGE OUTLINES DIP14 plastic dual in line package 14 leads 300 mil SOT27 1 4 seating plane 5 scale DIMENSIONS inch dimensions are derived from the original mm dimensions A A1 A2 1 1 UNIT max min max by D E 19 50 6 48 4 2 0 51 3 2 18 55 6 20 0 77 0 26 0 73 0 24 inches 0 17 0 02 0 13 Note 1 Plastic or metal protrusions of 0 25 mm 0 01 inch maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC JEITA PROJECTION SOT27 1 050G04 MO 001 SC 501 14 E SA ISSUE DATE 2003 Jul 23 14 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 SO14 plastic small outline package 14 leads body width 3 9 mm SOT108 1 detail X 2 5 Scale DIMENSIONS inch dimensions are deriv
11. ers the highest level product status determines the data sheet status DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2003 Jul 23 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semico
12. nductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance When the productis in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2003 SCA75 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for
13. t A a e gt 5 Oo 11 a gt 10 o 13 o gt 12 Top view MBL 760 MNA342 1 The die substrate is attached to this pad using conductive die attach material It can not be used as a supply pin or input Fig 2 Pin configuration DHVQFN14 Fig 3 Logic symbol A Do Do Do Y Fig 4 IEC logic symbol Fig 5 Logic diagram one inverter 2003 Jul 23 4 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 RECOMMENDED OPERATING CONDITIONS 74HC04 74HCT04 SYMBOL PARAMETER CONDITIONS supply voltage input voltage output voltage ambient temperature see DC and AC characteristics per device input rise and fall times Vcc 2 0 V LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 voltages are referenced to GND ground 0 V SYMBOL PARAMETER CONDITIONS MIN MAX UNIT supply voltage input diode current Vi 0 5 VorVi gt Vec 0 5V output diode current Vo 0 5 V or Vo gt Vcc 0 5 V output source or sink 0 5 V lt Vo lt Vcg 0 5 V current loc laND Voc or GND current Tstg storage temperature Piot power dissipation DIP14 package Tamb 40 to 125 C note 1 E 750 mW other packages Tamb 40 to 125 C note 2 500 mW Notes 1 For DIP14 packages above 70 C derate linearly with 12 mW K 2 For SO14 packages above 70 C dera
14. te linearly with 8 mW K For SSOP14 and TSSOP14 packages above 60 C derate linearly with 5 5 mW K For DHVQFN14 packages above 60 C derate linearly with 4 5 mW K 2003 Jul 23 5 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 DC CHARACTERISTICS Type 74HC04 At recommended operating conditions voltages are referenced to GND ground 0 V TEST CONDITIONS SYMBOL PARAMETER MAX OTHER Voc V Tamb 25 C HIGH level input voltage LOW level input voltage HIGH level output voltage V Viu or Vi lo 20 uA lo 20 uA lo 4 0 mA lo 20 uA lo 5 2 mA LOW level output voltage Vi Viu or Vi lo 20 uA lo 20 uA lo 4 0 mA lo 20 uA lo 5 2 mA input leakage current Vi Voc or GND 3 state output OFF current Vi Vy or Vi Vo Voc or GND quiescent supply current Vi Vcc or GND lo 0 2003 Jul 23 6 Philips Semiconductors Product specification Hex inverter 74HC04 74HCT04 TEST CONDITIONS OTHER Vcc V SYMBOL PARAMETER Tamb 40 to 85 C HIGH level input voltage LOW level input voltage HIGH level output voltage V Viu or Vi lo 20 uA lo 20 uA lo 4 0 mA lo 20 uA lo 5 2 mA LOW level output voltage Vi Viu or Vi lo 20 uA lo 20 uA lo 4 0 mA lo 20 uA lo 5 2 MA input leakage current Vi Vcc or GND 3 state output OFF current Vi Vi or Vi Vo Voc
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