ZETEX COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE ZXMHC3A01T8 handbook
Contents
1. e Y Single ny rr De D 0 1 e e a Thermal Resistance C W c2 2 0 100u 1m 10m100m 1 10 1k 25 50 75 100 125 150 Pulse Width s Temperature C Transient Thermal Impedance Derating Curve e c 2 m e o 2 m E o z o a x Maximum Power W i 100p 1m 10m100m 1 10 100 1k Pulse Width s Pulse Power Dissipation ZETEX SEMICONDUCTORS ZXMHC3AO1TS8 N channel ELECTRICAL CHARACTERISTICS at Tsp 25 C unless otherwise stated PARAMETER SYMBOL g d CONDITIONS STATIC Drain source breakdown voltage ViBR DsS Ip 250nA Vgs 0V Zero gate voltage drain current Vps 30V Vgs 0V Gate body leakage Vgs 20V Vps 0V Gate source threshold voltage i 152 25054 Vps Gs Static drain source on state Vgs 10V Ip2 2 5A resistance Vas 7 4 5V Ip2 2 0A Forward transconductance 3 l Vps 4 5V Ip 2 5A DYNAMIC Input capacitance Vps 25V Vgs2. 0 1 1 10 x Drain Current A On Resistance v Drain Current R stom Drain Source On Resistance Q DRAFT ISSUE E APRIL 2004 Drain Current A lo 0 1 1 10 Vis Drain Source Voltage V Output Characteristics and V asithi DS on Vestal Normalised R 50 0 50 100 Tj Junction Temperature C Normalised Curves v Temperature Reverse Drain Current A 0 6 0 8 1 0 1 2 s Source Drain Voltage V Source Drain Diode Forward Voltage ZETEX SEMICONDUCTORS ZXMHC3A01TS8 N channel TYPICAL CHARACTERISTICS C Capacitance pF 1 10 ps Drain Source Voltage V Capacitance v Drain Source Voltage Charge Basic Gate Charge Waveform taon t i taom t Mi i tion tion Switching Time Waveforms SEMICONDUCTORS e e eo gt Gate Source Voltage V 1 2 3 Q Charge nC Gate Source Voltage v Gate Charge Current Regulator Same as i D U T Pulse Width lt 1pS Duty Factor 0 1 o Switchi
3. Telephone 852 26100 611 Fax 852 24250 494 asia sales zetex com Corporate Headquarters Zetex plc Lansdowne Road Chadderton Oldham OL9 9TY United Kingdom Telephone 44 161 622 4444 Fax 44 161 622 4446 hq zetex com These offices are supported by agents and distributors in major countries world wide This publication is issued to provide outline information only which unless agreed by the Company in writing may not be used applied or reproduced i for any purpose or form part of any order or contract or be regarded as a representa on relating to the products or services concerned The Company reserves the right to alter without notice the specification design price or conditions of supply of any product or service For the latest product information log on to WWW zetex com ZETEX SEMICONDUCTORS 10 DRAFT ISSUE E APRIL 2004
4. 0V Output capacitance f 1M Hz Reverse transfer capacitance SWITCHING 3 Turn on delay time Rise time Vpp7 15V Ip 2 5A Turn off delay time f Rg 6 02 Vgs 10V Fall time Total gate charge Vps 15V Vgs 10V Ip 2 5A Gate source charge Gate drain charge SOURCE DRAIN DIODE Diode forward voltage T 25 C Is 1 7A Ves 20V Reverse recovery time Tj225 C I5 2 5A Reverse recovery charge 9 di dt 100A ps NOTES 1 Measured under pulsed conditions Pulse width 300s duty cycle 2 2 Switching characteristics are independent of operating junction temperature 3 For design aid only not subject to production testing DRAFT ISSUE E APRIL 2004 SEMICONDUCTORS N channel ZXMHC3AO1TS8 TYPICAL CHARACTERISTICS e o l5 Drain Current A 0 1 DS Output Characteristics 1 10 Drain Source Voltage V lt c o wx aA 2 O wx O E 2 5 3 0 3 5 4 0 4 5 5 0 s Gate Source Voltage V Typical Transfer Characteristics 25 C
5. b d Linear derating factor 1 7 13 6 Operating and storage temperature range THERMAL RESISTANCE PARAMETER SYMBOL 55 to 150 a d J unction to ambient Roya J unction to ambient b d NOTES Roya a For a device surface mounted on 50mm x 50mm x 1 6mm FR4 PCB with high coverage of single sided 20z copper in still air conditions b For a device surface mounted on FR4 PCB measured att 10 sec c Repetitive rating on 50mm x 50mm x 1 6mm FR4 D 0 02 pulse width 3004S pulse width limited by to transient thermal impedance graph d For device with one active die SEMICONDUCTORS maximum junction temperature Refer DRAFT ISSUE E APRIL 2004 ZXMHC3AO1TS8 CHARACTERISTICS 10 E Rosion 10 Limited Rosin Limited 1 s 100 ms 10ms ms Note ims I 10mE Single Pulse T 25 C a 1 SME Single Pulse T 25 C b Drain Current A Drain Current A at 3i D 1 1 10 Vps Drain Source Voltage V Vps Drain Source Voltage V N channel Safe Operating Area P channel Safe Operating Area N e One Active Die e
6. OO ZXMHC3AOITSTA O ZXMHC3AO1TS8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H BRIDGE SUMMARY N Channel V BR bss 30V Rps on 0 120 lp 3 1A P Channel V BR Dss 30V Rps on 0 210 lp 2 3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes auniquestructurethat combines the benefits of low on resistance with fast switching speed This makes them ideal for high efficiency low voltage power management applications SM8 FEATURES e Low on resistance Si S4 e Fast switching speed e Low threshold e Low gate drive e Single SM 8 surface mount package APPLICATIONS e Single phase DC fan motor drive ORDERING INFORMATION DEVICE QUANTITY PER REEL PINOUT ZXMHC3A01T8TA 1 000 units ZXMHC3AOITS8TC 4 000 units DEVICE MARKING e ZXMH C3A01 Top View DRAFT ISSUE E APRIL 2004 1 SEMICONDUCTORS ZXMHC3A01TS ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N Channel Drain source voltage Voss 30 Gate source voltage 20 Continuous drain current Vgs 10V T4 25 C 0 Vas 10V Ta 70 C X8 Vgg 10V TA 25 C 9X 3 1 2 5 2 7 Pulsed drain current Continuous source current body diode b 2 3 Pulsed source current body diode PS Si gt B lt lt Power dissipation at T4 25 C 9 Linear derating factor 1 3 10 4 Power dissipation at T4 25 C
7. RACTERISTICS o F Drain Current A o e H Li D 0 1 1 10 V Drain Source Voltage V DS Output Characteristics lt c o x x 2 o iE _ a o Ix 1 GS 2 V Gate Sou 3 4 5 rce Voltage V Typical Transfer Characteristics 0 1 sis Drain Source On Resistance Q SEMICONDUCTORS 1 d Drain Current A On Resistance v Drain Current ii Drain Current A H 1 10 Ss Drain Source Voltage V Output Characteristics Rosten V osun Normalised Bossa and V satt 0 6 50 0 50 100 150 Tj Junction Temperature C Normalised Curves v Temperature Ip Reverse Drain Current A 0 4 0 6 0 8 1 0 1 2 1 4 Source Drain Voltage V S
8. ng Time Test Circuit DRAFT ISSUE E APRIL 2004 ZXMHC3AO1TS8 P channel ELECTRICAL CHARACTERISTICS at Tsp 25 C unless otherwise stated PARAMETER SYMBOL g d CONDITIONS STATIC Drain source breakdown voltage ViBR DsS Ip7 2504A Vgs 0V Zero gate voltage drain current Vps 30V Vgs 0V Gate body leakage Vgs 20V Vps 0V Gate source threshold voltage j Ip 250uA Vps Gs Static drain source on state Vgs 10V Ip 1 4A resistance Ves 4 5V dA Forward transconductance 3 Vps 15V Ip 1 4A DYNAMIC Input capacitance Vps 15V Vgs 0V Output capacitance f 1M Hz Reverse transfer capacitance SWITCHING 3 Turn on delay time f Vpp 15V Ip 1A Rise time Rg 6 00 Vgg 10V Turn off delay time Fall time Total gate charge Vps 15V Vgs 5V Ip 1 4A Total gate charge Vps 15V Vgg 10V Gate source charge Ip 1 4A Gate drain charge SOURCE DRAIN DIODE Diode forward voltage P T 225 C Io 1 1A Vis 20V Reverse recovery time Tj 25 C lg 0 95A Reverse recovery charge 3 di dt2100A us NOTES 1 Measured under pulsed conditions Pulse width 300s duty cycle 2 2 Switching characteristics are independent of operating junction temperature 3 For design aid only not subject to production testing DRAFT ISSUE E APRIL 2004 SEMICONDUCTORS ZXMHC3A01TS8 P channel e TYPICAL CHA
9. ource Drain Diode Forward Voltage DRAFT ISSUE E APRIL 2004 ZXMHC3AO1TS8 P channel TYPICAL CHARACTERISTICS C Capacitance pF Gate Source Voltage V 1 10 2 4 Vos Drain Source Voltage V 8 Q Charge nC gt Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge Current Regulator Charge Basic Gate Charge Waveform Pulse Width lt 1pS Duty Factor 0 1 fuor t Switching Time Waveforms Switching Time Test Circuit DRAFT ISSUE E APRIL 2004 SEMICONDUCTORS ZXMHC3AO1TS8 PACKAGE OUTLINE Pin No 1 Controlling dimensions are in millimeters Approximate conversions are given in inches PACKAGE DIMENSIONS O Zetex Semiconductors plc 2004 Europe Zetex GmbH StreitfeldstraBe 19 D 81673 M nchen Germany Telefon 49 89 45 49 49 0 Fax 49 89 45 49 49 49 europe sales zetex com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge NY 11788 USA Telephone 1 631 360 2222 Fax 1 631 360 8222 usa sales zetex com Asia Pacific Zetex Asia Ltd 3701 04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong
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