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ZETEX ZXM61P03F handbook

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1. 0 9 ID 250uA a G 0 7 VGS th VDS 10V E 10m oa S os 1 5 2 5 3 5 4 5 2100 0 100 200 VGs Gate Source Voltage V Tj Junction Temperature C Typical Transfer Characteristics Normalised RDS on and VGS th v Temperature 2 10 lt 10 o KE Oo Cc S Vg 3V E 5 3 CG S G 1 pa fo Q o Vg 5V Li 2 100m T 150 C E Lallla gt T 25 C eil Ce Ki Vg 10V CC C 1 e a A 100m 2 10m 0 1 1 10 02 04 06 08 1 0 1 2 1 4 z ID Drain Current A VsD Source Drain Voltage V ZS On Resistance v Drain Current Source Drain Diode Forward Voltage a oc PROVISIONAL ISSUE A JULY 1999 dE TEX 85 ZXM61P03F TYPICAL CHARACTERISTICS Charge Basic Gate Charge Waveform ES Vgs 0V La DNH f 1MHz oO 12 gz 250 D Q Ciss D 200 Coss gt S Crss g S 2 5 150 z ZS bi 100 oO w oO o ep f wn Wa 0 gt 0 1 1 10 100 E 0 05 1 15 2 25 3 35 4 45 Vps Drain Source Voltage V Q Charge nC Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge Current Regulator 10V V tiom H Switching Time Waveforms BA 10V ae Pulse Width lt 1S Duty Factor 0 1 Switching Time Test Circuit PROVISIONAL ISSUE A JULY 1999 86 ZETEX ZXM61P03F PACKAGE DI
2. 0 0 ZXMe1P03 0 ZETEX 30V P CHANNEL ENHANCEMENT MODE MOSFET SUMMARY Vierpss 30V Rps on 0 350 Ip 1 0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on resistance with fast switching speed This makes them ideal for high efficiency low voltage power management applications FEATURES e Low on resistance e Fast switching speed e Low threshold e Low gate drive e SOT23 package APPLICATIONS s DC DC Converters e Power Management Functions e Disconnect switches s Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH mm QUANTITY inches PER REEL ZXM61P03FTA 7 8mm embossed 3000 units ZXM61P03FTC 13 8mm embossed 10000 units DEVICE MARKING e P03 PROVISIONAL ISSUE A JULY 1999 81 ZXM61P03F SOT23 DLI G Top View ZETEX ZXM61P03F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Source Voltage Voss Gate Source Voltage Continuous Drain Current Vgg 10V Ta 25 C b Vgs 10V T 70 C b Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at T 25 C a Linear Derating Factor Power Dissipation at T 25 C b Linear Derating Factor Operating and Storage Temperature Range re 55 to 150 THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient a Resa Junction to Ambi
3. MENSIONS PAD LAYOUT DETAILS STAND OFF HEIGHT KI DIM Millimetres Inches SOT23 pattern Min Minimum Pad Size dimensions in mm oa 0 0145 0 085 0 0033 NOM 1 9 NOM 0 075 0 01 0 0004 0 004 2 10 S 0 0825 0 0985 ZS Te QO mn Dom ZS GEI 0 95 GEN 0 037 Zetex plc Fields New Road Chadderton Oldham OL9 8NP United Kingdom SE 44 161 622 4422 Sales 44 161 622 4444 General Enquiries 44 161 SC 4420 Zetex GmbH Zetex Inc Zetex Asia Ltd These are supported by StreitfeldstraBe 19 47 Mall Drive Unit 4 3510 Metroplaza Tower 2 agents and distributors in D 81673 M nchen Commack NY 11725 Hing Fong Road major countries world wide Germany USA Kwai Fong Hong Kong Zetex plc 1999 Telefon 49 89 45 49 49 0 Telephone 516 543 7100 Telephone 852 26100 611 Fax 49 89 45 49 49 49 Fax 516 864 7630 Fax 852 24250 494 Internet http www zetex com This publication is issued to provide outline information only which unless agreed by the Company in writing may not be used applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned The Company reserves the right to alter without notice the specification design price or conditions of supply of any product or service PROVISIONAL ISSUE A JULY 1999 dE TEX 88
4. V Ip 0 6A Vas 4 5V Ip 0 3A Vpg 10V Ip 0 3A Vps 25 V Ves 0V f 1MHz Vpp 15V Ip 0 6A Rg 6 2Q Rp 252 Refer to test circuit Vps 24V Vgg 10V Ip 0 6A Refer to test circuit T 25 C Ig 0 6A Vase 0V T 25 C Ip 0 6A di dt 100A us ZETEX ZXM61P03F TYPICAL CHARACTERISTICS 10 10 2 Eos ov 8V 7V 6v wes E E ov BV 7V e VGS E 10V 5V E 10V Gr P P D 4V D av 5 5 oO 1 oO 1 E c 3V 9 av O O 2 a 100m 100m 0 1 1 10 100 0 1 10 100 Vps Drain Source Voltage V Vps Drain Source Voltage V Output Characteristics Output Characteristics 10 Z 17 i _ H RDS on E gt 15 Ka VGS 10V c S 1 e 13 ID 0 6A E e 3 o O o 11 VGS VDS i OH E 100m
5. ent b Resa NOTES a For a device surface mounted on 25mm x 25mm FRA PCB with high coverage of single sided 10z copper in still air conditions b For a device surface mounted on FR4 PCB measured at t lt 5 secs c Repetitive rating pulse width limited by maximum junction temperature Refer to Transient Thermal Impedance graph PROVISIONAL ISSUE A JULY 1999 dE TEX 82 ZXM61P03F 1 Pulse Width s Transient Thermal Impedance 10 B 10 E Refer Note a w T Z E 08 z S Refer Note b g 1 T Refer Note a S 0 6 O o c E DC Q 04 G 100m e D 10ms z Q Ims 0 2 100us x Li 10m 0 0 1 1 10 100 0 20 40 60 80 100 120 140 160 VDs Drain Source Voltage V T Temperature C Safe Operating Area Derating Curve 180 nt 240 rrm rrm TTT gt L Re
6. fer Note b Refer Note a Z 160 O O 200 S 140 z 120 160 S S K 100 K e 9 80 D 0 5 E D 0 5 oc oc er 60 80 40 D 0 2 D 0 2 gt See o 40 E BS e GA e en SE 6 Y u RI T 0 0001 0 001 0 01 0 1 10 0 0001 0 001 0 01 0 1 10 100 1000 1 Pulse Width s Transient Thermal Impedance PROVISIONAL ISSUE A JULY 1999 83 ZETEX ZXM61P03F ELECTRICAL CHARACTERISTICS at Tamb 25 C unless otherwise stated PARAMETER STATIC Drain Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Source Threshold Voltage Static Drain Source On State Resistance 1 Forward Transconductance 3 DYNAMIC 3 Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING 2 3 Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge SOURCE DRAIN DIODE Diode Forward Voltage 1 Reverse Recovery Time 3 Reverse Recovery Charge 3 SYMBOL MIN Viprypss 30 Ipss less Vash 71 0 RDs on taton t r tdloff TYP 1 Measured under pulsed conditions Width 300us Duty cycle lt 2 2 Switching characteristics are independent of operating junction temperature 3 For design aid only not subject to production testing PROVISIONAL ISSUE A JULY 1999 84 MAX UNIT CONDITIONS Ip 250LA Ve g 0V Vpg 30V Vgg 0V Vach 20V Vps 0V Ib 250uA Vps Ves V g 10

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