ZETEX ZXM62N02E6 handbook
Contents
1. E 0 6 0 1 S 04 4 1 5 2 2 5 3 3 5 4 M00 50 0 50 100 150 200 Vas Gate Source Voltage V Tj Junction Temperature C Typical Transfer Characteristics Normalised RDS on and VGS th v Temperature S a z 100 E S p w x 2 5 H o 10 oc c o a eo co 2 2 1 S o P T 150 C T 25 C o c c DH 4 A 00 D 0 1 0 1 1 10 100 02 04 06 08 10 12 14 16 T Ip Drain Current A VsD Source Drain Voltage V o D 2 On Resistance v Drain Current Source Drain Diode Forward Voltage cc PROVISIONAL ISSUE A JULY 1999 dE TEX 93 ZXM62N02E6 TYPICAL CHARACTERISTICS 900 lt 5 5 5 Vgs 0V 2 Ip 2 2A 800 f 1Mhz H o 4 5 IS 700 S S 4 Ee iss o 3 5 g 600 Coss gt VDS 16V c Crss o 3 e 500 9 E 5 25 Q 400 o o 2 amp 300 as 200 o Ka 1 100 o 05 oO 0 gt 0 0 1 1 10 100 0 1 2 3 4 5 6 VDS Drain Source Voltage V Q Charge nC Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge Current Regulator 4 5V Vo Charge Basic Gate Charge Waveform Gate Charge Test Circuit Pulse Width lt 14S 45V Duty Factor 0 1 Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A JULY 1999 dE TEX 94 ZXM62N02E6 PACKAGE DIMENSIONS PAD2. a For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 10z copper in still air conditions b For a device surface mounted on FR4 PCB measured at t lt 5 secs c Repetitive rating pulse width limited by maximum junction temperature Refer to Transient Thermal Impedance graph PROVISIONAL ISSUE A JULY 1999 dE TEX 90 ZXM62N02E6 Pulse Width s Transient Thermal Impedance 100 o 2 Refer Note a S x 1 5 d E rus S 2 t Refer Note b o 3 o 1 Refer Note a 2 z a 1 DC D Q 1s 0 5 d 100ms 6 E a 10ms a ims x 0 1 100us E 0 0 1 1 10 100 0 20 40 60 80 100 120 140 160 VDS Drain Source Voltage V T Temperature C Safe Operating Area Derating Curve a 80 120 oot F Refer Note b z R
3. 2 Switching characteristics are independent of operating junction temperature 3 For design aid only not subject to production testing PROVISIONAL ISSUE A JULY 1999 dE TEX 92 ZXM62N02E6 TYPICAL CHARACTERISTICS 100 e 100 GC 25C 150 C T DV 45V AN 3 5V VGS T 5V 4 5V AN VGS t d E a ONE Zen g 1 i5 2 2 o N oO 2V S g 1 2 1 A A TSV a a 0 1 0 1 0 1 1 10 100 0 1 1 10 100 Vos Drain Source Voltage V Vps Drain Source Voltage V Output Characteristics Output Characteristics 100 S 18 C VDS 10V o ads o 1 6 z a VGS 4 5V 1D 2 2A Ki c 1 4 S 10 5 S 12 o o T 150 C Q T 25 C Ka 1 0 VGS VDS S 1 E ID 250uA a os a T
4. 0 0 ZXM62NO2EG 0 0 ZETEX 20V N CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BRDSSz20V Rpos on 0 12 Ipz3 2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on resistance with fast switching speed This makes them ideal for high efficiency low voltage power management applications FEATURES e Low on resistance e Fast switching speed e Low threshold e Low gate drive e SOT23 6 package APPLICATIONS e DC DC Converters Power Management Functions e Disconnect switches e Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH mm inches ZXM62NO2E6TA 7 8mm embossed ZXM62N02E6TC 13 8mm embossed DEVICE MARKING e 2N02 PROVISIONAL ISSUE A JULY 1999 89 QUANTITY PER REEL 3000 units 10000 units ZXM62N02E6 SOT23 6 D G 5 DI Oo D D GL S Top View ZETEX ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Source Voltage Voss Gate Source Voltage Continuous Drain Current Vgg 4 5V TA 25 C b Vgs 4 5V Ta 70 C b Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode Power Dissipation at T 25 C a Linear Derating Factor Power Dissipation at T 25 C b Linear Derating Factor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient a Resa Junction to Ambient b Resa NOTES
5. LAYOUT DETAILS 2x 0 95 0 375 6X 0 65 0 025 DIM Millimetres Inches Min Zetex plc Fields New Road Chadderton Oldham OL9 8NP United Kingdom LI 44 161 622 4422 Sales 44 161 622 4444 General Enquiries 44 161 eB 4420 Zetex GmbH Zetex Inc Zetex Asia Ltd These are supported by StreitfeldstraBe 19 47 Mall Drive Unit 4 3510 Metroplaza Tower 2 agents and distributors in D 81673 M nchen Commack NY 11725 Hing Fong Road major countries world wide Germany USA Kwai Fong Hong Kong Zetex plc 1999 Telefon 49 89 45 49 49 0 Telephone 516 543 7100 Telephone 852 26100 611 Fax 49 89 45 49 49 49 Fax 516 864 7630 Fax 852 24250 494 Internet http www zetex com This publication is issued to provide outline information only which unless agreed by the Company in writing may not be used applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned The Company reserves the right to alter without notice the specification design price or conditions of supply of any product or service PROVISIONAL ISSUE A JULY 1999 dE TEX 96
6. efer Note a o O 100 S E 8 ZS 80 c c 2 40 p 05 Ki 60 L205 o o o o 40 T E 20 55 E D 0 2 E D 0 1 E 20 D 0 1 E E Single Pulsd ty uu Single Pulse 0 0001 0 001 0 01 0 1 1 10 100 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse Width s Transient Thermal Impedance PROVISIONAL ISSUE A JULY 1999 91 ZETEX ZXM62N02bE6 ELECTRICAL CHARACTERISTICS at Tamb 25 C unless otherwise stated PARAMETER SYMBOL MIN TYP UNIT CONDITIONS STATIC Drain Source Breakdown Voltage ViBR DSS Ip 250nA Vgg 0V Zero Gate Voltage Drain Current Ipss Vps 20V Vgg 0V Gate Body Leakage lass Ves 12V Vpg 0V Gate Source Threshold Voltage Vesith Ip 250uA Vps Ves Static Drain Source On State Resistance 1 Boston Vas 4 5V Ip 2 2A Ves 2 7V Ip 1 1A Forward Transconductance Vps 10V Ip 1 1A DYNAMIC 3 Input Capacitance Vps 15 V Vgg 0V Output Capacitance f 1MHz Reverse Transfer Capacitance SWITCHING 2 3 Turn On Delay Time taton Rise Time H Vpp 10V Ip 2 2A Rg 6 09 Rp 4 4Q refer to test circuit Turn Off Delay Time Tatort Fall Time Total Gate Charge Vpsz2 16V Vag 4 5V Gate Source Charge Ip 2 2A refer to test circuit Gate Drain Charge SOURCE DRAIN DIODE Diode Forward Voltage 1 3 Tj 25 C 15 2 2A Vgg 0V Reverse Recovery Time 3 S Tj 25 C l 2 2A di dt 100A us Reverse Recovery Charge 3 1 Measured under pulsed conditions Width 300us Duty cycle lt 2
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ZETEX ZXM62N02E6 handbook