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ZETEX ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET handbook

1. 4 6X 0 65 0 025 DIM Millimetres Inches Min Zetex plc Fields New Road Chadderton Oldham OL9 8NP United Kingdom Ua 44 161 622 4422 Sales 44 161 622 4444 General Enquiries 44 161 eB 4420 Zetex GmbH Zetex Inc Zetex Asia Ltd These are supported by StreitfeldstraBe 19 47 Mall Drive Unit 4 3510 Metroplaza Tower 2 agents and distributors in D 81673 M nchen Commack NY 11725 Hing Fong Road major countries world wide Germany USA Kwai Fong Hong Kong Zetex plc 1999 Telefon 49 89 45 49 49 0 Telephone 516 543 7100 Telephone 852 26100 611 Fax 49 89 45 49 49 49 Fax 516 864 7630 Fax 852 24250 494 Internet http www zetex com This publication is issued to provide outline information only which unless agreed by the Company in writing may not be used applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned The Company reserves the right to alter without notice the specification design price or conditions of supply of any product or service PROVISIONAL ISSUE A MAY 1999 ZEIER 104
2. a For a device surface mounted on 25mm x 25mm FRA PCB with high coverage of single sided 10z copper in still air conditions b For a device surface mounted on FR4 PCB measured at t lt 5 secs c Repetitive rating pulse width limited by maximum junction temperature Refer to Transient Thermal Impedance graph PROVISIONAL ISSUE A MAY 1999 ZEIER 98 ZXM62NO03E6 CHARACTERISTICS 100 P 2 E Refer Note a w z a E 1 5 S 10 2 e S Refer Note b 3 Refer Note a 8 E 5 ao 5 S 1 100ms Z 0 5 a 10ms T Ims x 100s bal 0 1 0 0 1 1 10 100 0 20 40 60 80 100 120 140 160 Vos Drain Source Voltage V T Temperature Safe Operating Area Derating Curve 80 oom tim 120 Som Z 9 Refer Note b Refer Note a O 100 H rm S 60 CR 02 02 Q Q 80 C C g s 2 au Loos D
3. 2 Switching characteristics are independent of operating junction temperature 3 For design aid only not subject to production testing PROVISIONAL ISSUE A MAY 1999 ZETEX 100 ZXM62NO03E6 TYPICAL CHARACTERISTICS 100 100 C 25 C 150 C x 10V 8V 7V 6V VGS E 10V BV 7V 6V VGS 5V K BV S 10 DN S 10 by LS AV Ke AV bel ke oO oO 3 5 SRC Sy E a sv A A 2 S a 0 1 0 1 0 1 1 10 100 0 1 1 10 100 Vps Drain Source Voltage V Vps Drain Source Voltage V Output Characteristics Output Characteristics 100 i Z 16 E VDS 10V D T L 14 Pe 2 VGS 10V 5 10 1 2 east x z 5 2 WI n 1 0 E VI 1 08 e e 2 a 06 E LS 0 1 z 0
4. 0 0 ZXM62N03E4 O 0 ZETEX 30V N CHANNEL ENHANCEMENT MODE MOSFET SUMMARY Vierpss 30V Rps on 0 110 ID 3 2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on resistance with fast switching speed This makes them ideal for high efficiency low voltage power management applications FEATURES e Low on resistance e Fast switching speed e Low threshold e Low gate drive e SOT23 6 package APPLICATIONS e DC DC Converters e Power Management Functions s Disconnect switches s Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH mm inches ZXM62NO3E6TA 7 8mm embossed ZXM62NO03E6TC 13 8mm embossed DEVICE MARKING e 2N03 PROVISIONAL ISSUE A MAY 1999 97 QUANTITY PER REEL 3000 units 10000 units ZXM62NO03E6 SOT23 6 D G 5 pI Oo D D GL S Top View ZETEX ZXM62NO03E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Source Voltage Voss Gate Source Voltage Continuous Drain Current Vgg 10V T 25 C b Vgs 10V Ta 70 C b Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode Power Dissipation at T 25 C a Linear Derating Factor Power Dissipation at T 25 C b Linear Derating Factor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient a Resa Junction to Ambient b Resa NOTES
5. 4 2 25 3 35 4 45 5 55 6 65 100 50 0 50 100 150 200 VGS Gate Source Voltage V Tj Junction Temperature C Typical Transfer Characteristics Normalised RDS on and VGSith v Temperature a 10 z 100 o 2 LZ Le E o b n bel 3 1 O 10 Cc e VGS 3V O Q a oO B on VGS 4 5V 8 i o 2 10V E U C C 1 e a S 0 01 D 0 1 A 0 1 1 10 100 02 04 06 08 10 12 14 ID Drain Current A VsD Source Drain Voltage V ZS On Resistance v Drain Current Source Drain Diode Forward Voltage Q oc PROVISIONAL ISSUE A MAY 1999 ZEIER 101 ZXM62NO03E6 TYPICAL CHARACTERISTICS Vgs 0V f 1Mhz Ciss Coss Crss C Capacitance pF w S 0 1 1 10 Vps Drain Source Voltage V Capacitance v Drain Source Voltage 100 VGs Gate Source Voltage V CH T ID 2 2A O NOU A AONO o 1 2 3 4 5 6 7 8 Q Charge nC Gate Source Voltage v Gate Charge Charge Basic Gate Charge Waveform Same as i DUT T Vos la m PE DUT sl L L S L 4 Current Regulator Switching Time Waveforms Pulse Width lt 1pS Duty Factor 0 1 Switching Time Test Circuit PROVISIONAL ISSUE A MAY 1999 102 ZETEX ZXM62NO03E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS 2x 0 95 0 375
6. an B5 N N 02 02 C C ES A0 bal bal E 20 p 0 2 E D 0 2 E DA E 20 D 0 1 ke D 0 05 Single Pulsd ke D 0 05 Single Pulse 0 0 L 0 0001 0 001 0 01 0 1 1 10 100 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse Width s Pulse Width s Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A MAY 1999 ZEIER 99 ZXM62NO03E6 ELECTRICAL CHARACTERISTICS at Tamb 25 C unless otherwise stated PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS STATIC Drain Source Breakdown Voltage ViBR DSS Ip 250nA Vgg 0V Zero Gate Voltage Drain Current lpss Vps 30V Vgg 0V Gate Body Leakage lass Vas 20V Vps 0V Gate Source Threshold Voltage Vesith Ip 250uA Vps Ves Static Drain Source On State Resistance 1 Boston 0 Vgg 10V Ip 2 2A 0 15 Ves 4 5V Ip 1 1A Forward Transconductance d Vps 10V Ip 1 1A DYNAMIC 3 Input Capacitance Vps 25 V Vege OV Output Capacitance f 1MHz Reverse Transfer Capacitance SWITCHING 2 3 Turn On Delay Time taton Rise Time L Vpp 15V Ip 2 2A Rg 6 09 Rp 6 72 refer to test circuit Turn Off Delay Time Lotem Fall Time Total Gate Charge Vps 24V Vgsg 10V Gate Source Charge Ip 2 2A refer to test circuit Gate Drain Charge SOURCE DRAIN DIODE Diode Forward Voltage 1 Tj 25 C Is 2 2A Vgs 0V Reverse Recovery Time 3 Tj 25 C l 2 2A di dt 100A us Reverse Recovery Charge 3 1 Measured under pulsed conditions Width 300us Duty cycle lt 2

ZETEX ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET handbook

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