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International IOR Rectifier IRF2805PbF handbook

1. TOR Rectifier Driver Gate Drive PW pw heriodd P Period T due Vag 10V Circuit Layout Considerations c i e Low Stray Inductance e Ground Plane e LowLeakage Inductance Current Transformer D U T Isp Waveform UT Isp le Reverse Recovery Body Diode Forward Current Current ff di dt D U T Vps Waveform Diode Recovery dv dt t VoD e dv dtcontrolled by Rg V DD Re Applied CC e Driver same type as D U T Lt Voltage Body Diode Forward Drop Isp controlled by Duty Factor D Te inductor Curent D U T Device Under Test Ripple x 5 Vas 5V for Logic Level Devices Fig 17 Peak Diode Recovery dv dt Test Circuit for N Channel HEXFET Power MOSFETs R Vps gt R Ves D U T wl PV Nop TOI tov Pulse Width lt 1 us Duty Factor 0 1 96 Fig 18a Switching Time Test Circuit ta on tr id of it Fig 18b Switching Time Waveforms 8 www irf com International IRF2805PbF TOR Rectifier TO 220AB Package Outline Dimensions are shown in millimeters inches 2 10 54 415 3 78 149 B of oF 10 29 405 V 3 54 139 4 69 185 _ 62 4 20 165 Ea 1 32 052 F 4 22 048 6 47 255 I i 6 10 240 15 24 600 EB eee LEAD AS
2. 200 hA Vas 20V Gate to Source Reverse Leakage 200 Ves 20V Qg Total Gate Charge 150 230 lp 104A Qgs Gate to Source Charge 38 57 nC Vps 44V Qoa Gate to Drain Miller Charge 52 78 Vas 10V ta on Turn On Delay Time 14 Vpp 28V tr Rise Time 120 us Ib 104A la off Turn Off Delay Time 68 Re 2 52 lr Fall Time 110 Ves 10V Between lead D Lp Internal Drain Inductance 4 5 ay 9mm 0 25in from package S Ls Internal Source Inductance 75 and center of die contact s Ciss Input Capacitance 5110 Vas 0V Coss Output Capacitance 1190 pF Vps 25V Crss Reverse Transfer Capacitance 210 f 1 0MHz See Fig 5 Coss Output Capacitance 6470 Vas OV Vps 1 0V f 1 0MHz Coss Output Capacitance 860 Vas OV Vps 44V f 1 0MHz Coss eff Effective Output Capacitance 1600 Vas OV Vps OV to 44V Source Drain Ratings and Characteristics Parameter Min Typ Max Units Conditions Is Continuous Source Current 475 MOSFET symbol i Body Diode A showing the P IsM Pulsed Source Current 700 integral reverse 8 Body Diode p n junction diode s Vsp Diode Forward Voltage 1 3 V T 225C ls 2 104A Vas 0V trr Reverse Recovery Time 80 120 ns Tj 2 25 C Ip 104A Qrr Reverse Recovery Ch
3. Fig 6 Typical Gate Charge Vs Gate to Source Voltage 10000 LIMITED BY Rps on OPERATION IN THIS AREA 1000 100 10 A 1 10 EX ICL E EI ACE ee QE 100 Vps Drain toSource Voltage V Fig 8 Maximum Safe Operating Area 1000 www irf com International IRF2805PbF IER Rectifier MEE EEE PEE SSH LIMITED BY PACKAGE t E H HHHHH aaa eo 5 5 7 L T A 3 E o o S z 5 e a O Rpgion Drain to Source On Resistance l 60 40 20 80 100 120 140 160 180 Tc Case Temperature C Tj Junction S C Fig 9 Maximum Drain Current Vs Fig 10 Normalized On Resistance Case Temperature Vs Temperature 1 D D 0 50 2 N o4 0 20 0 102 9 0 05 8 ae SINGLE PULSE a 0 01 THERMAL RESPONSE al t i z 00 E Lt E Notes 1 Duty factor D ty t 2 2 PeakT y P py XZ qc Tc 0 00001 0 0001 0 001 0 01 0 1 t4 Rectangular Pulse Duration sec Fig 11 Maximum Effective Transient Thermal Impedance Junct
4. O O IRF2805PBF 0O O PD 95493 International IRE2805PbF TOR Rectifier AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET e Climate Control ABS Electronic Braking B Windshield Wipers _ e Lead Free Vpss 55V Features H 4 7mMQ e Advanced Process Technology G PSI e Ultra Low On Resistance In 75A e 175 C Operating Temperature S b e FastSwitching e Hepetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications this HEXFET9 Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area Additional features ofthis design are a 175 C junction operating temperature fast switching speed and im proved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Absolute Maximum Ratings Parameter Max Units lp Tc 25 C Continuous Drain Current Vas 10V Silicon limited 175 lp Tc 100 C Continuous Drain Current Vas 10V See Fig 9 120 A lp Tg 25 C Continuous Drain Current Vas 10V Package limited 75 lou Pulsed Drain Current 700 Pp QTc 25 C Power Dissipation 330 W Linear Derating Factor 2 2 W C Vas Gate to Source Voltage 20 V Eas Single Pulse Avalanche EnergyO 450 mJ Eas 6 sigma
5. SIGNMENTS Nc HEXFET IGBTs CoPACK 1 2 8 1 GATE 1 GATE 2 DRAIN 2 COLLECTOR 3 SOURCE 3 EMITTER 4 DRAIN 4 COLLECTOR 14 09 555 n 13 47 530 4 06 160 3 55 1140 a 0 93 037 0 55 022 1 40 055 0 69 027 0 46 018 3X 445 045 036 04 M B A J 2 92 115 964 104 2540100 j be 2X NOTES 1 DIMENSIONING amp TOLERANCING PER ANSI Y14 5M 1982 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO 220AB 2 CONTROLLING DIMENSION INCH 4 HEATSINK amp LEAD MEASUREMENTS DO NOT INCLUDE BURRS TO 220AB Part Marking Information EXAMPLE THIS IS AN IRF1010 LOT CODE 1789 O le ASSEMBLED ON WW 19 1997 INTERNATIONAL Jm PART NUMBER IN THE ASSEMBLY LINE C RECTIFIER aes LOGO Note P in assembly line TOR 7190 ee position indicates Lead Free 17 89 DATE CODE ASSEMBLY YEAR 7 1997 LOT CODE WEEK 19 LINE C Data and specifications subject to change without notice This product has been designed and qualified for the Automotive Q101 market Qualification Standards can be found on IR s Web site International I amp R Rectifier IR WORLD HEADQUARTERS 233 Kansas St El Segundo California 90245 USA Tel 310 252 7105 TAC Fax 310 252 7903 Visit us at www irf com for sales contact information 07 04 www irf com 9
6. Single Pulse Avalanche Energy Tested Value 1220 lan Avalanche Current See Fig 12a 12b 15 16 A EAR Repetitive Avalanche Energy mJ Tj Operating Junction and 55 to 175 Tsrc Storage Temperature Range C Soldering Temperature for 10 seconds 300 1 6mm from case Mounting Torque 6 32 or M3 screw 1 1 10 Nem Ibfein Thermal Resistance Parameter Typ Max Units Rouc Junction to Case 0 45 Recs Case to Sink Flat Greased Surface 0 50 C W Roa Junction to Ambient 62 HEXFET R is a registered trademark of International Rectifier www irf com 1 07 01 04 IRF2805PbF International IOR Rectifier Electrical Characteristics Tj 25 C unless otherwise specified Parameter Min Typ Max Units Conditions V BR DSS Drain to Source Breakdown Voltage 59 V Vas OV Ip 250A AVpr pss ATy Breakdown Voltage Temp Coefficient 0 06 V C Reference to 25 C Ip 1mA Rps on Static Drain to Source On Resistance 3 9 47 mQ Ves 10V Ip 104A Vas h Gate Threshold Voltage 2 0 4 0 V Vps 10V Ip 250A gis Forward Transconductance 91 S Vps 25V Ip 104A loss Drain to Source Leakage Current pec 20 pa Ys SBN Vase OY 250 Vps 55V Ves OV Ty 125 C ise Gate to Source Forward Leakage
7. arge 290 430 nC di dt 100A us ton Forward Turn On Time Intrinsic turn on time is negligible turn on is dominated by Ls Lp Notes Coss eff is a fixed capacitance that gives the same charging time as Coss while Vps is rising from 0 to 80 Vpss Limited by Tjmax see Fig 12a 12b 15 16 for typical repetitive Repetitive rating pulse width limited by max junction temperature See fig 11 Q Starting Ty 25 C L 0 08mH Re 250 las 104A See Figure 12 av ancne perlormance l l Isp lt 104A di dt lt 240A us Vpp V Bp pss This value determined from sample failure population 100 Tj lt 175 C tested to this value in production Pulse width lt 400us duty cycle lt 2 2 www irf com International IGR Rectifier 1000 Vos TOP 15V 10V ER 8 0V x 7 0V 6 0V 5 5V 100 vd BOTTOM 4 5V oO eg 4 5Ve T o dp 10 a Ee 20us PULSE WIDTH Tj 25 C 0 1 1 10 100 Vps Drain to Source Voltage V Fig 1 Typical Output Characteristics 1000 Ip Drain to Source Current A 8 4 0 5 0 Tj 25 C TJ 175 C Vos 25V 20us PULSE WIDTH 6 0 7 0 8 0 9 0 10 0 Vas Gate to Source Voltage V Fig 3 Typical Transfer Characteristics www ir
8. f com Ip Drain to Source Current A Gfs Forward Transconductance S 1000 IRF2805PbF VGS TOP 15V 10V 8 0V 7 0V 6 0V 5 5V 5 0V BOTTOM 4 5V 100 OV 20us PULSE WIDTH Tj 175 C 10 0 1 1 10 100 Vps Drain to Source Voltage V Fig 2 Typical Output Characteristics 200 160 120 80 40 40 Vps 25V 20us PULSE WIDTH 80 120 160 200 Ip Drain to Source Current A Fig 4 Typical Forward Transconductance Vs Drain Current 3 IRF2805PbF C Capacitance pF la p Reverse Drain Current A Vps Drain to Source Voltage V Fig 5 Typical Capacitance Vs Drain to Source Voltage 1000 0 TJ 175 C 100 0 10 0 IT 25 C 1 0 y Vae 0V GS 02 04 06 08 10 12 14 16 1 8 Vsp Source toDrain Voltage V Fig 7 Typical Source Drain Diode Forward Voltage Ip Drain to Source Current A International TOR Rectifier 20 ID 104A Vps 44V VDS 28V pA 16 D amp E 9 12 5 o dp 8 D T oO 69 8 4 gt 0 0 40 80 120 160 200 240 Qg Total Gate Charge nC
9. ion to Case www irf com 5 IRF2805PbF Fig 12b Unclamped Inductive Waveforms e QG Qas lt Qap Fig 13a Basic Gate Charge Waveform Current Charge gt Regulator Same Type as D U T _ 50KQ lt LS 12V T 2uF 2 T ia Vas 3mA Fig 13b Gate Charge Test Circuit 6 ANC AN Iq 7 Ip Current Sampling Resistors T Vps Ve sithy Gate threshold Voltage V Eng Single Pulse Avalanche Energy mJ 1000 800 600 400 200 International IER Rectifier Ip TOP 43A 87A BOTTOM 104A Starting Tj Junction Temperature 125 150 175 Fig 12c Maximum Avalanche Energy Vs Drain Current Ip 250pA D x n 75 50 25 0 f i T 100 125 150 175 Ty Temperature C Fig 14 Threshold Voltage Vs Temperature www irf com International IRF2805PbF ISR Rectifier 10000 Duty Cycle Single Pulse 100 Allowed avalanche Current vs g avalanche pulsewidth tav m assuming ATj 25 C due to 5 0 01 avala
10. nche losses Note In no O 100 case should Tj be allowed to 5 exceed Tjmax 5 0 05 sj 2 0 10 T qu 1 1 0E 07 1 0E 06 1 0E 05 1 0E 04 1 0E 03 1 0E 02 1 0E 01 tav sec Fig 15 Typical Avalanche Current Vs Pulsewidth 500 Single Pulse BOTTOM 1096 Duty Cycle 400 300 200 EAR Avalanche Energy mJ 100 25 50 75 100 125 150 175 Starting Ty Junction Temperature C Fig 16 Maximum Avalanche Energy Vs Temperature www irf com Notes on Repetitive Avalanche Curves Figures 15 16 For further info see AN 1005 at www irf com 1 Avalanche failures assumption Purely a thermal phenomenon and failure occurs at a temperature far in excess of Timax This is validated for every part type 2 Safe operation in Avalanche is allowed as long asTjmax is not exceeded 3 Equation below based on circuit and waveforms shown in Figures 12a 12b 4 Pp ave Average power dissipation per single avalanche pulse 5 BV Rated breakdown voltage 1 3 factor accounts for voltage increase during avalanche 6 la Allowable avalanche current 7 AT Allowable rise in junction temperature not to exceed Tjmax assumed as 25 C in Figure 15 16 tay Average time in avalanche D Duty cycle in avalanche tay f Zthsc D tay Transient thermal resistance see figure 11 Pp ave 1 2 1 3 BV lgy AT Zinc lay 2AT 1 3 BV Zg Eas ar Pp aveytav IRF2805PbF International

International IOR Rectifier IRF2805PbF handbook

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