IXYS IXFK 34N80/IXFX 34N80 handbook
Contents
1. Veg 0 V Note 1 EE 1 5 V a 250 ns l l di dt 100 A us V 100 V Qon pes R 1 4 uC l 10 A im Millimeter Inches Note 1 Pulse test t lt 300 us duty cycle d lt 2 Min Max Min Max 2 See characterization curves in datasheet IXFN34N80 A 4 82 5 13 190 202 A1 2 54 2 89 100 114 A2 2 00 2 10 079 083 b 1 12 1 42 044 056 b1 2 39 2 69 094 106 b2 2 90 3 09 114 122 D 25 91 26 16 1 020 1 030 e 5 46 BSC 215 BSC L 20 32 20 83 800 820 L1 2 29 2 59 090 102 P 3 17 3 66 125 144 Q 6 07 6 27 239 247 Q1 8 38 8 69 330 342 R 3 81 4 32 150 170 R1 1 78 2 29 070 090 6 04 6 30 238 248 T 1 57 1 83 062 072 A IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 2000 IXYS All rights reserved 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 2 x 2 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 0252. HiPerFET IXFK 34N80 V Power MOSFETs IXFX 34N80 log 34A II o lt Rosca 0 240 single MOSFET Die a t lt 250 ns Avalanche Rated y G Preliminary data sheet S Symbol Test Conditions Maximum Ratings PLUS 247 IXFX Voss T 25 C to 150 C 800 V Voen T 25 C to 150 C Ros 1 MQ 800 V TAB Vos Continuous 20 V as ee V osm Transient 30 V S L T 25 C 34 A n T 25 C pulse width limited by T 136 A TO 264 AA IXFK l T 25 C 36 A E T 25 C 64 mJ a T 25 C 3 J dv dt I lt lbw di dt lt 100 A us Vip lt Vic 5 V ns A eae G Gate D Drain P T 25 C 560 W S Source TAB Drain T 55 150 C Le 150 C T 55 150 C g Features T 1 6 mm 0 063 in from case for 10 s 300 C Internationalstandard packages e TM M Mountingtorque TO 264 0 9 6 Nm Ib in LOW Ros o HDMOS process d e Rugged polysilicon gate cell structure Weight PLUS 247 6 g Unclamped Inductive Switching UIS TO 264 10 g rated e Low package inductance easy to drive and to protect e Fastintrinsic rectifier Applications e DC D Symbol Test Conditions Characteristic Values seit pel ii neo Hie otherwise specified e Switched mode andresonant mode min typ max power supplies Vics Vas 0 V 3mA 800 P V DC choppers e AC motor control Vasin Vos Ves lp 8MA 3 0 i 0 0 V e Temperature andlighting controls lacs Vas 20 V V 0 200 nA Advantages loss Vis Voss T 25 C 100 pA PL
3. US 247 package for clip or spring Veg OV T 125 C 2mA mounting e Space savings Asia Veg 10 V 1 0 5 I 0 24 Q AE ene High power density IXYS reserves the right to change limits test conditions and dimensions 98560B 6 99 2000 IXYS All rights reserved 1 2 IXFK 34N80 MIXYS IXFX 34N80 Symbol Test Conditions Characteristic Values i i t PLUS247 IXFX l T 25 C unless otherwise specified US Outline min typ max yy Note 1 NO O A O1 ep Vig 10V 1 0 5 1 Q gt o o O 5 7500 pF Vos OV V5 25 V f 1 MHz 920 pF 220 pF a 7 200 Veg 10V V 0 5 V R 1 Q External 1 0 5 bios DSS d off AK O 5 N Dim Millimeter Inches Min Max Min Max M J 3 O Vas 10 V Vps 0 5 Voss lp 0 5 pos DSS Q _ k O A A O o1 Oo gt op op op 1 14 1 40 045 055 0 22 K W 1 91 2 13 075 084 o 2 92 3 12 115 123 gt a O a gt Q Ol O O E K W 0 61 0 80 024 031 D 20 80 21 34 819 840 E 15 75 16 13 620 635 e 5 45 BSC 215 BSC L 19 81 20 32 780 800 L1 3 81 4 32 150 170 5 59 6 20 220 244 Source Drain Diode Characteristic Values 4 32 4 83 170 190 T 25 C unless otherwise specified Symbol Test Conditions min typ max TO 264 AA Outline les Repetitive 136 pulse width limited by T y Vp l 1
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IXYS IXFK 34N80/IXFX 34N80 handbook