IXYS IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q handbook
Contents
1. 4100 nA e Fast intrinsic Rectifier loss Vos Voss T 25 C 25 pA Advantages Vos OV T 125 C 1 mA e Easy to mount Rosion Vos 10 V l5 0 5 e lias j lt 2 28 mQ n Space savings Pulse test t lt 300 us duty cycle d lt 2 High power density IXYS reserves the right to change limits test conditions and dimensions 98605A 6 99 2000 IXYS All rights reserved 1 2 EX Ys IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max TO 247 AD IXFH Outline aL ziz Dim Millimeter Min Max Inches Min Max 19 81 20 32 20 80 21 46 0 780 0 0 819 0 800 845 15 75 16 26 3 55 3 65 0 610 0 0 140 0 640 144 4 32 5 49 5 4 6 2 0 170 0 0 212 0 216 244 1 65 2 13 4 5 0 065 0 0 084 177 1 0 1 4 10 8 11 0 0 040 0 0 426 0 055 433 4 7 5 3 0 4 0 8 0 185 0 0 016 0 209 031 Zl Zr xAcC roal mMm vo wo gt 1 5 2 49 0 087 0 102 CH Vps 10 V lp 0 5 1 pulse test 35 45 S Css 4600 pF Css Vos 0 V Vps 25 V f 1 MHz 1100 pF Css 500 pF tion 26 ns t Vos 10 V Vis 0 5 Viss lp 0 5 loos 50 ns tioi R 2 0 Q External 75 ns t 20 ns Qion 180 nC Q s Vas 10 V Vis 0 5 Viss lp 0 5 lpas 39 nC Qa 100 nC Rinuc 0 35 K W Rinck TO 247 0 25 K W T2. 0 736 752 2 40 2 70 094 106 L1 1 20 1 40 047 055 L2 1 00 1 15 039 045 L3 0 25 BSC 010 BSC L4 3 80 4 10 150 161 TrOImMmMo ooTo gt ryrye j 0 653 16 59 0 500 12 70 Min Recommended Footprint 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 486 715 5 381 025
3. 25 38 1X FH80N 200 BY Fe EX Ys HiPerFET IXFH 80N20Q Vics 200 V Power MOSFETs IXFK 80N20Q ln 80 A Q Class IAE T BONZIG Roson 28 mQ N Channel Enhancement Mode t lt 200 ns Avalanche Rated High dv dt Low Q D Preliminary data sheet s Symbol Test Conditions Maximum Ratings TO 247 AD IXFH Voss T 25 C to 150 C 200 V Voer T 25 C to 150 C Ros 1 MQ 200 V Z AB Vos Continuous 20 V D Vosi Transient 30 V los T 25 C 80 A T0 268 D3 IXFT Lom T 25 C pulse width limited by T y 320 A lan T 25 C 80 A i Exe T 25 C 45 mJ G A TAB E T 25 C 15 J S dv dt ls lt lpw di dt lt 100 A us Vip lt Voss 5 V ns TO 264 AA IXFK T lt 150 C R 22 i P5 T 25 C 360 W T 55 150 C Tia 150 C G Lo 55 150 C R D TAB Ti 1 6 mm 0 063 in from case for 10 s 300 C G Gal M Mounting torque TO 247 1 13 10 Nm b in S Source TAB Drain TO 264 0 9 6 Nm lb in Weight TO 247 6 g TO 264 10 g TO 268 4 g Features e Low gate charge Symbol Test Conditions Characteristic Values e International standard packages T 25 C unless otherwise specified e Epoxy meetUL94V 0 flammability min typ max classification e LOW Rog on HDMOS process Voss Veg OV l 250 uA 200 Vv e Rugged polysilicon gate cell structure Vash Vos Ves lp 4 MA 2 0 4 0 V Avalanche energy and current rated less Veg 20 Vio Vog 0
4. O 264 0 15 K W Source Drain Diode Characteristic Values T 25 C unless otherwise specified Symbol Test Conditions min typ max I Vos OV 80 A Is Repetitive pulse width limited by T 320 A Vp l lg Veg OV 1 5 V Pulse test t lt 300 us duty cycle d lt 2 t 200 ns Qm di dt 100 A us V 100 V 1 2 uC law 10 A TO 268AA D PAK Dim Millimeter Inches Min Max Min Max 4 9 5 1 193 201 2 7 2 9 106 114 02 25 001 010 1 15 1 45 045 057 1 9 2 1 75 83 4 65 016 026 13 80 14 00 543 551 mo N TO 264 AA IXFK Outline A o e A A Back sie 4 _Iep Dim Millimeter Inches Min Max Min Max A 4 82 5 13 190 202 Al 2 54 2 89 100 114 A2 2 00 2 10 079 083 b 1 12 1 42 044 056 b1 2 39 2 69 094 106 b2 2 90 3 09 114 122 c 0 53 0 83 021 033 D 25 91 26 16 1 020 1 030 E 19 81 19 96 780 786 e 5 46 BSC 215 BSC J 0 00 0 25 000 010 K 0 00 0 25 000 010 L 20 32 20 83 800 820 L1 2 29 2 59 090 102 P 3 17 3 66 125 144 Q 6 07 6 27 239 247 Q1 8 38 8 69 330 342 R 3 81 4 32 150 170 R1 1 78 2 29 070 090 S 6 04 6 30 238 248 T 1 57 1 83 062 072 15 85 16 05 624 632 13 3 13 6 524 535 5 45 BSC 215 BSC 18 70 19 1
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IXYS IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q handbook