IXYS IXFH8N80 IXFH9N80 handbook
Contents
1. Preliminary Data Sheet DSS loas I oso t TM HiPerFET IXFH8N80 800 1 10 250ns Power MOSFETs IXFH9N80 800 9 0 90 250ns N Channel Enhancement Mode D High dv dt Low t HDMOS Family G TO 247 AD IXFH S Symbol Test Conditions Maximum Ratings Mess T 25 to 150 800 V T 25 C to 150 C Ros 1 800 V Vas Continuous 20 V Transient 30 V TO 247 SMD loas T 25 8N80 8 A 9N80 9 A bo T 25 pulse width limited by 8 N80 32 A 9N80 36 A T 25 8N80 8 A 9N80 9 A Gate D Drain E 25 18 mJ S Source TAB Drain dv dt l lt l w 9 9 lt 100 A us V 5 V ns Add suffix letter S for surface mountable lt 150 C 220 package P 25 180 W 55 150 150 T 55 150 Mounting torque 1 13 10 NnvIb in International standard packages Ris o HDMOS process Weight TO 204 18 g TO 247 6g e Rugged polysilicon gate cell structure Maximum lead temperature for soldering 300 e Inductive Switching UIS 1 6 mm 0 062 in from case for 10 s rated e Low package inductance easy to drive and to protect Symbol TestConditions Characteristic Values intrinsic Rectifier T 252. Figure 7 Gate Charge gt N e lt o o lt N I 4A L 8 L z L L Q _ c gt 6 S z 4c Q 0 20 40 60 80 100 120 Gate Charge nC Figure 9 Forward Voltage Drop of the Intrinsic Diode lp Amperes lp Amperes Figure 11 Transient Thermal Resistance 10000 1000 100 IXFH8N80 IXFH9N80 Figure 8 Capacitance Curves 0 5 10 15 20 25 30 3 Vps Volts 5 40 Figure10 Forward Bias Safe Operating Area TIKAT WNUN Exi SRNI N INC r Te 25 NON 1 10 100 Vps Volts 800 1 00 4 HH 4484 1 1 1 R th K W 27 pe EIE 10 10 10 107 Pulse Width Seconds IXYS reserves the right to change limits test conditions and dimensions IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 981 025
3. unless otherwise specified m min typ max Applications E E e DC DC converters Voss Vas 70V lp 3 mA 800 V Battery chargers Vss temperature coefficient 0 088 Switched mode and resonant mode V l 2 5 2 45 V supplies D e choppers Vosen temperature coefficient 0 257 AC metor control V 2420V V 0 m KOO Temperature and lighting controls GSS GS DC DS NE las V 708 V 25 m 250 pA Advantages Vas 70V T 125 C 1 MA Easy to mount with 1 screw TO 247 R V 10V L 205 1 8N80 14 Q isolated mounting screw hole DS on GS i D25 i i Pulse test t lt 300 us duty 5 lt 2 9N80 09 Space Sayings e High power density 1997 IXYS All rights reserved 96527A 8 97 IXYS IXFH8N80 IXFH9N80 TO 247 AD IXFH Outline Symbol TestConditions Characteristic Values 25 C unless otherwise specified min typ max 10 V 1 0 5 l pulse test 4 S Vis 2600 C 7 0V V 7 25V f 1MHz 240 pF 60 E ion 35 ns t 710V V 0 5 Vise 15 7 05 tL 15 ns R 4 7 Q External 70 ns t 35 Hs ID Gate 3 Source 85 130 nC Tab Drain INCHES MILLIMETERS Q 10V V 0 5 V l 0 5 1 15 30 nC SYM Qa 40 70 nC 0 7 KW R uk 0 25 KW 170 2161 Source Drain Diode Characteristic Values T 25 unless otherwi
4. se specified Symbol TestConditions min typ max Vos 0 8N80 8 A ON80 9 A Repetitive pulse width limited by T y 8380 9N80 A l l Ves 70V V Pulse test t lt 300 us duty cycle lt 2 t T 25 1 Gat 3 Sou T 125 C 2 Drain A pen Qu di dt 100 25 Millimeter Inches V 100V 125 C Max Min J 4 83 5 21 190 205 2 29 2 54 090 100 Is 25 216 075 085 125 1 40 045 055 2 13 075 084 0 80 024 031 21 34 819 840 16 13 620 635 BSC 215 BSC 3 55 3 65 140 144 5 59 6 20 220 244 4 32 4 83 170 190 6 15 BSC 242 BSC IXYS reserves the right to change limits test conditions and dimensions IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 025 Figure 1 Output Characteristics at 25 gt Figure 3 normalized to 15 25 vs Roson 7 NRrP DazHd I AP SHHV D Figure 5 Drain Currentvs Case Temperature IXFH9N80 50 25 0 25 50 75 100 125 150 7 C 7 NRrP DazHd Ip AP SHHV IXFH8N80 IXFH9N80 Figure 4 Figure 2 Output Characteristics at 1259 EN NE n Normalized to 15 25 vs 1997 IXYS All rights reserved
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IXYS IXFH8N80 IXFH9N80 handbook