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IXYS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 handbook

1. Fig 7 Gate Charge Characteristic Curve Fig 8 Forward Bias Safe Operating Area Limited by R iE HE ee Y DS on A ck 100 ee bint 100us g l D Q ms 7 lt f Oo i 4 gt A 10 10ms 100ms 0 1 0 25 50 75 100 125 150 175 200 1 10 100 Gate Charge nCoulombs Vps Volts Fig 9 Capacitance Curves Fig 10 Source Current vs Source to Drain Voltage LL 2 V D Oo X 1 Q N Q O 0 00 0 25 0 50 ee 1 00 1 25 1 50 Vps Volts Vsp Volt Fig 11 Transient Thermal Impedance D 0 5 Z o1 O D 0 2 O D 0 1 Q D D 0 0 2 0 w 0 01 fp 0 02 E D 0 0 Single pulse 0 001 0 00001 0 0001 0 001 0 01 0 1 1 10 Time Seconds 2000 IXYS All rights reserved Ag
2. HiPerFET Power MOSFETs IXFH IXFM 67 N10 IXFH IXFM 75 N10 N Channel Enhancement Mode High dv dt Low t_ HDMOS Family D G S Symbol Test Conditions Maximum Ratings V bss T 25 C to 150 C 100 V ee T 25 C to 150 C Ros 1 MQ 100 V Vos Continuous 20 V Vean Transient 30 V laz To 25 C 67N10 67 A 75N10 75 A ee T 25 C pulse width limited by T 67N10 268 A 75N10 300 A l T 25 C 67N10 67 A 75N10 75 A T 25 C 30 mJ dv dt l lt lpw di dt lt 100 A us Vip lt Voss 5 V ns T lt 150 C R 2 2 P T 25 C 300 W T 55 150 C Tay 150 C i 55 150 C T 1 6 mm 0 062 in from case for 10 s 300 C Weight TO 204 18 g TO 247 6g Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max Vig Vos O V 1 250 uA 100 7 V V asit Vos Vos Ip 4 MA 2 0 4 V la Voa UV s V0 E 100 nA ee Vig S008 Vix T 25 C 250 pA Veg 0 V T 125 C 1 mA Roson Vos 10 V l 0 5 lp 67N10 E 0 025 Q 75N10 0 020 Pulse test t lt 300 us duty cycle d lt 2 IXYS reserves the right to change limits test conditions and dimensions 2000 IXYS All rights reserved DS on 100V 67A 25 mQ 100V 75A 20 MQ TO 247 AD IXFH TO 204 AE IXFM G Gate D Drain S Source TAB Drain Features e International standard packages e Low Rog on HDMOS process e Rugged polysilicon gate cell structure e Unclamped Inductive Switching U
3. us T 25 C 200 ns V 25V T 125 C 300 ns Dim Millimeter Min Max E 5 21 5 71 O 3 84 4 19 0 151 25 16 26 66 0 991 j IXYS MOSFETS and IGBT vered b f the following U S QAIDA ee IOUS ese ved 4 835 592 4 881 106 5 017 508 5 049 961 5 187 117 5 486 715 2 4 4 850 072 4 931 844 5 034 796 5 063 307 5 237 481 5 381 025 IXFH67N10 IXFH75N10 w IXYS IXFM67N10 IXFM75N10 Fig 1 Output Characteristics Fig 2 Input Admittance HHHH a WY D D eb e A U TIAL P ELL EL A a Wz a Ny aus AE A eRe EN L 0 ye 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 9 10 Vos Volts Veg Volts Fig 3 Region VS Drain Current Fig 4 Temperature Dependence of Drain to Source Resistance eek ek ek eb x S sh A O O Z Z am T Degrees C Fig 5 Drain Current vs Fig 6 Temperature Dependence of Case Temperature Breakdown and Threshold Voltage i EFN TT os C om 3 HON O 40 Z lt 20 gt TTA l 0 5 75 100 125 150 50 25 0 25 50 75 100 125 150 T Degrees C T Degrees C 2000 IXYS All rights reserved 3 IXFH67N10 IXFH 75N10 w IXYS IXFM67N10 IXFM75N10
4. IS rated e Low package inductance easy to drive and to protect e Fast intrinsic Rectifier Applications e DC DC converters e Synchronous rectification e Battery chargers e Switched mode and resonant mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages e Easy to mount with 1 screw TO 247 isolated mounting screw hole e Space savings e High power density 91521F 10 95 1 4 IXFH67N10 IXFH75N10 w IXYS IXFM67N10 IXFM75N10 Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified min typ max TO 247 AD IXFH Outline J Vs 10 V lp lp pulse test 25 S Cis 4500 pF Css Ves 0 V Vag 25 V f 1 MHz 1600 pF Css 800 pF Cin 20 30 ns t Veg 10 V Vig 05V salam 0h 60 110 ns ae R 2 Q External 80 110 ns t 60 90 ns On 180 260 nC Millimeter Min Max Q Veg 10 V Vig 0 5 Vicg 0 5 Iaoe 36 70 nC i aa Qa 85 160 nC 0 819 C 5 75 16 26 0 610 thuc 0 42 K W D 13 55 3 65 0 140 thcK 0 25 K W 4 32 5 49 0 170 54 6 2 0 212 1 65 2 13 0 065 ABN J J Source Drain Diode Characteristic Values ae T 25 C unless otherwise specified a Symbol Test Conditions min typ max I Veg OV 67N10 67 A 75N10 75 A la Repetitive 67N10 268 A pulse width limited by T 75N10 300 A Vp kailg Veg 0V 1 75 V Pulse test t lt 300 us duty cycle d lt 2 is l 25 A di dt 100A

IXYS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 handbook

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