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IXYS IXFH 76 N06-11/N06-12/N07-11/N07-12 handbook

1. mini typ max Switched mode and resonant mode ower supplies Voss Ves 20V l 2250uA NO6 60 eae ce NUT 19 y Temperature and lighting controls Vost Vos Vag lp 4 mA 2 0 34 V Low voltage relays loss Vas 20 Vio V 0 100 nA loss Vag 0 8 Vs T 25 C 100 HA Advantages Vas 0V T 125 C 500 pA Easy to mount with 1 screw Roson Vas 10V l 2 40A 76NQ6 NO7 11 S isolated mounting screw hole 76N06 N07 12 12 mQ Space savings Pulse test t lt 300 us duty cycle d lt 2 96 High power density IXYS reserves the right to change limits test conditions and dimensions 92785H 12 98 2000 IXYS All rights reserved 1 4 I S IXFH 76 NO6 11 IXFH 76 NO7 11 URIXY IXFH 76 N06 12 IXFH 76 N07 12 Symbol Test Conditions Characteristic Values T 25 C unless otherwise specified 0 244 AD IXFH Outline min typ max Jis Vos 10 Vil 40A pulse test 30 40 S C ui 4400 pF C Ves 20V Vog 25V f 1 MHz 2000 pF C J 1200 pF taron 40 ns t Vas 10V Vps 50 V 1 230A 70 ns M bs R 1 Q External 130 ns N t 55 ns Q er 240 nC Dim Millimeter Inches Min Max Min Max Q S Vas 210V V 20 5 V 1 240A 30 nC 9 93 re poem A 19 81 20 32 0 780 0 800 Qa J 120 nC B 20 80 21 46 0 819 0 845 C 15 75 16 26 0 610 0 640 Rinsc 042 K W D 355 3 65 0 140 0 144 Rinck 0 2
2. 2 0 T 100 C 0 0 0 10 20 30 40 0 0 0 5 1 0 1 5 Vos Volts Vsp Volts Fig 11 Transient Thermal Impedance S D 0 5 0 100 D e 2 o IDz0 1 Qo o i D 06 D t T 0010 EL P E D 0 01 Tr o Ren Lr Single Pulse T be 0 001 HHH ot Pity A PE EP c LE 0 00001 0 0001 0 001 0 01 0 1 1 Time Seconds 2000 IXYS All rights reserved
3. Roson Normalized Transconductance Siemens Fig 2 Input Admittance 2 4 6 8 10 12 Veg Volts Fig 4 Rogion Temperature Dependence 2 25 Ip 38A Vas 10V 2 00 1 75 1 50 1 25 1 00 0 75 0 50 50 25 0 25 50 75 100 125 150 175 T Degrees C Fig 6 Transconductance Vas 10V T 25 C T 100 C 0 50 100 150 200 250 300 lp Amperes 2000 IXYS All rights reserved EIXYS IXFH 76 NO6 11 IXFH 76 NO7 11 IXFH 76 NO6 12 IXFH 76 NO7 12 Fig 7 Gate Charge 14 Vps 40V Ip 38A jen Ig 1mA g 10L S f 8 8 gt 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge nCoulombs Fig 9 Capacitance Curves Capacitance pF Fig 8 Forward Bias Safe Operating Area 1000 ds on C Limited by R 10us 100us 100 nw WNS TE ims lp Amperes 10 10ms 100ms DC T 25 C 1 10 Vos Volts Fig 10 Source Current vs Source to Drain Volta 200 T 150 C 150 ge 100 100 lp Amperes T 25 T 150 C odis 50
4. amp 18 IX FH 76N 06 110 py Fy HIXYS HiPerFET Voss los R sion Power MOSFETs IXFH 76 NO6 11 60V 76A 11mQ IXFH 76 NO6 12 60V 76A 12 mO IXFH 76 NO7 11 70V 76A 11 mo N Channel Enhancement Mode High dv dt Low t HDMOS Family IXFH 76 N07 12 70V 76A 12 mO D Preliminary data sheet G S Symbol Test Conditions Maximum Ratings TO 247 AD Voss T 25 C to 175 C N06 60 V N07 70 V Vocn T 25 C to 175 C Ry 10 kQ N06 60 V N07 70 V Vos Continuous 20 V Vosi Transient 30 V loos T 25 C Chip capability 125 A 76 A lins T 119 C limited by external leads 76 A G Gate D Drain lou T 25 C pulse width limited by T 304 A S Source TAB Drain la T 2 25C 100 A E T 25 C 30 mJ Features E 2 J AS International standard package dv dt ls lt lpm di dt lt 100 A us Vy lt Voge 5 V ns JEDEC TO 247 AD T lt 150 C R 20 Low Rog HDMOS process P T 25 C 360 W Rugged polysilicon gate cell structure T 554175 eC Unclamped Inductive Switching UIS E rated Tu 175 C Low package inductance T 55 150 C easy to drive and to protect T 1 6 mm 0 062 in from case for 10 s 300 cg Fastintrinsic Rectifier M Mountingtorque 1 15 10 Nm lb in Weight 6 g Applications Symbol Test Conditions Characteristic Values DC DG converners T 25 C unless otherwise specified Synchrono srectifi ation Battery chargers
5. 5 K W E 4 32 5 49 0 170 0 216 F 5 4 6 2 0 212 0 244 G 1 65 2 13 0 065 0 084 H 45l 0 177 Source Drain Diode Characteristic Values J 1 0 1 4 0 040 0 055 T 25 C unless otherwise specified E CES TO ee 0 493 Symbol Test Conditions min typ max 7 14 e SE oot I Vos 0V 76 A N 1 5 2 49 0 087 0 102 lou Repetitive pulse width limited by T 304 A Vsp I lg Veg 20V 15 V Pulse test t lt 300 us duty cycle d lt 2 l 25A di dt 100A us T 25 C 150 ns V 25V T 125 C 250 ns 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U S patents 4 835 592 4 881 106 5 017 508 5 049 961 4 850 072 4 931 844 5 034 796 5 063 307 5 187 117 5 237 481 5 486 715 5 381 025 EIXYS IXFH 76 NO6 11 IXFH 76 NO6 12 IXFH 76 NO7 11 IXFH 76 NO7 12 Fig 1 Output Characteristics e 25 C Vase 10V go 728 m 2 6v 5V lp Amperes 0 0 0 5 1 0 1 5 2 0 Vps Volts Fig 3 Raston vs Drain Current ds on 1 4 T 25C Vas 10V Vas 15V Roson Normalized 0 9 0 8 0 50 100 150 200 250 300 lp Amperes Fig 5 lj vs Case Temperature 90 80 70 60 50 40 30 20 10 Ip Amperes 0 50 25 0 25 50 75 100 125 150 Case Temperature C lp Amperes

IXYS IXFH 76 N06-11/N06-12/N07-11/N07-12 handbook

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